-
The optical properties of the ion-implanted and annealed silicon wafer in visible spectral range are close to the single crystalline silicon due to the annealing-induced recrystallization, resulting in the unavailability of normal visible spectroscopic ellipsometry （SE） measurements. In this study, the SE measurements are performed in infrared range （2—20 μm） to characterize the implanted and annealed wafers. An optical model based on the classical Drude free-carrier absorption equation is developed, with which the impurity concentration profile, resistivity, mobility of the carriers, and the dispersion relations of the implanted layer are determined. The relationships between these parameters and the implantation dose are also analyzed. The results suggest that the infrared SE is an effective method to characterize the annealed silicon wafers. Longer wavelength should be used to distinguish lower impurity concentration.
-
Keywords:
- infrared spectroscopic ellipsometry /
- ion implantation /
- Drude model /
- dispersion relation
[1] ［1］Chen Z M, Wang J N 1999 Basic Material Physics for Semiconductor Devices （Beijing: Science Press） chap 4,5 （in Chinese）［陈治明、 王建农 1999 半导体器件的材料物理学基础 （科学出版社: 北京）第4，5章］
[2] ［2］Runyan W R, Shaffner T J 1998 Semiconductor Measurements and Instrumentation （New York: McGraw-Hill）
[3] ［3］Hilfiker J N, Bungay C L, Synowicki R A, Tiwald T E, Herzinger C M, Johs B, Pribil G K, Woollam J A 2003 J. Vac. Sci. Technol. A 21 1103
[4] ［4］Tompkins H G, Irene E A 2005 Handbook of Ellipsometry （Heidelberg: Springer-Verlag）
[5] ［5］Mo D, Ye X J 1981 Acta Phys. Sin. 30 1287 （in Chinese）［莫党、 叶贤京 1981 物理学报 30 1287］
[6] ［6］Cortot J P, Ged P 1982 Appl. Phys. Lett. 41 93
[7] ［7］Tsunoda K, Adachi S, Takahashi M 2002 J. Appl. Phys. 91 2936
[8] ［8］Hikino S, Adachi S 2004 J. Phys. D 37 1617
[9] ［9］Pelaz L, Marqués L, Barbolla J 2004 J. Appl. Phys. 96 5947
[10] ］Lioudakis E, Christofides C, Othonos A 2006 J. Appl. Phys. 99 123514
[11] ］Azzain R M, Bashara N M 1977 Ellipsometry and Polarized Light （Amsterdam: North Holland） chap 3
[12] ］Su Q F, Liu J M, Wang L J, Shi W M, Xia Y B 2005 Acta Phys. Sin. 54 5145 （in Chinese）［苏青峰、刘健敏、王林军、史伟民、夏义本 2005 物理学报 54 5145］
[13] ］Kasap S, Capper P 2006 Springer Handbook of Electronic and Photonic Materials （Springer Science: Heidelberg） chap 3.3
[14] ］Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics （Beijing:Publishing House of Electronics Industry） chap10 （in Chinese）［刘恩科、 朱秉生、 罗晋生 2008 半导体物理学 （电子工业出版社: 北京） 第十章］
[15] ］Shen X C 2002 Semiconductor Spectrum and Optical Properties （Beijing: Science Press） （in Chinese）［沈学础 2002 半导体光谱和光学性质 （科学出版社: 北京）］
[16] ］Tiwald T E, Thompson D W, Woollam J A 1998 J. Vac. Sci. Technol. B 16 312
-
[1] ［1］Chen Z M, Wang J N 1999 Basic Material Physics for Semiconductor Devices （Beijing: Science Press） chap 4,5 （in Chinese）［陈治明、 王建农 1999 半导体器件的材料物理学基础 （科学出版社: 北京）第4，5章］
[2] ［2］Runyan W R, Shaffner T J 1998 Semiconductor Measurements and Instrumentation （New York: McGraw-Hill）
[3] ［3］Hilfiker J N, Bungay C L, Synowicki R A, Tiwald T E, Herzinger C M, Johs B, Pribil G K, Woollam J A 2003 J. Vac. Sci. Technol. A 21 1103
[4] ［4］Tompkins H G, Irene E A 2005 Handbook of Ellipsometry （Heidelberg: Springer-Verlag）
[5] ［5］Mo D, Ye X J 1981 Acta Phys. Sin. 30 1287 （in Chinese）［莫党、 叶贤京 1981 物理学报 30 1287］
[6] ［6］Cortot J P, Ged P 1982 Appl. Phys. Lett. 41 93
[7] ［7］Tsunoda K, Adachi S, Takahashi M 2002 J. Appl. Phys. 91 2936
[8] ［8］Hikino S, Adachi S 2004 J. Phys. D 37 1617
[9] ［9］Pelaz L, Marqués L, Barbolla J 2004 J. Appl. Phys. 96 5947
[10] ］Lioudakis E, Christofides C, Othonos A 2006 J. Appl. Phys. 99 123514
[11] ］Azzain R M, Bashara N M 1977 Ellipsometry and Polarized Light （Amsterdam: North Holland） chap 3
[12] ］Su Q F, Liu J M, Wang L J, Shi W M, Xia Y B 2005 Acta Phys. Sin. 54 5145 （in Chinese）［苏青峰、刘健敏、王林军、史伟民、夏义本 2005 物理学报 54 5145］
[13] ］Kasap S, Capper P 2006 Springer Handbook of Electronic and Photonic Materials （Springer Science: Heidelberg） chap 3.3
[14] ］Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics （Beijing:Publishing House of Electronics Industry） chap10 （in Chinese）［刘恩科、 朱秉生、 罗晋生 2008 半导体物理学 （电子工业出版社: 北京） 第十章］
[15] ］Shen X C 2002 Semiconductor Spectrum and Optical Properties （Beijing: Science Press） （in Chinese）［沈学础 2002 半导体光谱和光学性质 （科学出版社: 北京）］
[16] ］Tiwald T E, Thompson D W, Woollam J A 1998 J. Vac. Sci. Technol. B 16 312
计量
- 文章访问数: 10845
- PDF下载量: 1731
- 被引次数: 0
下载:
