[1] Gu W P, Hao Y, Zhang J C, Wang C, Feng Q, Ma X H 2009 Acta Phys. Sin. 58 511 (in Chinese) [谷文萍, 郝跃, 张进城, 王冲, 冯倩, 马晓华 2009 物理学报 58 511]
[2] Hu W D, Chen X S, Quan Z J, Zhang M X, Huang Y, Xia C S, Lu W, Ye D P 2007 J. Appl. Phys. 102 034502
[3] Zhou Z T, Guo L W, Xing Z G, Ding G J, Tan C L, L L, Liu J, Liu X Y, Jia H Q, Chen H, Zhou J M 2007 Acta Phys. Sin. 56 6013 (in Chinese) [周忠堂, 郭丽伟, 邢志刚, 丁国建, 谭长林, 吕力, 刘建, 刘新宇, 贾海强, 陈弘, 周均铭 2007 物理学报 56 6013]
[4] Zhou M, Li C Y, Zhao D G 2015 Chin. J. Lumin. 36 1034 (in Chinese) [周梅, 李春燕, 赵德刚 2015 发光学报 36 1034]
[5] Matsunaga T, Hosokawa T, Umetani Y, Takayama R, Kanno I 2002 Phys. Rev. B 66 064102
[6] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchell A, Stutzmann M 2000 Appl. Phys. 87 334
[7] Lin Z J, Lu W, Lee J 2003 Appl. Phys. Lett. 82 4364
[8] Yu N, Wang H H, Liu F F, Du Z J, Wang Y H, Song H H, Zhu Y X, Sun J 2015 Chin. J. Lumin. 36 1178 (in Chinese) [于宁, 王红航, 刘飞飞, 杜志娟, 王岳华, 宋会会, 朱彦旭, 孙捷 2015 发光学报 36 1178]
[9] Zheng K 2016 M. S. Thesis (Hefei: Hefei University of Technology) (in Chinese) [郑坤 2016 硕士学位论文 (合肥: 合肥工业大学)]
[10] Gao Q N, Zhu Y, Wang J G, Yang J H 2016 Proceedings of the 14th International Asia Confererece on Industrial Engineering and Management Innovation Tianjin, China, July 25-26, 2015 p297
[11] Fu H, Yang L, Shang Z G, Yang Y P 2013 Electronics World Infrared Light Communication Device 18 116 (in Chinese) [付辉, 阳璐, 尚治国, 杨栎平 2013 电子世界 18 116]
[12] Xu K, Xu C, Guo W, Xie Y Y 2016 Semicond. Photoelectr. 1 30 (in Chinese) [许坤, 徐晨, 郭旺, 解意洋 2016 半导体光电 1 30]
[13] Zhang H B, Yao J D, Shao J M, Li H, Li S W, Bao D H, Wang C X, Yang G W 2014 Sci. Rep. 4 5876
[14] Wang Z J, Chu J R, Maeda R, Kokawaa H 2002 Thin Solid Films 416 66
[15] Zhu Y X, Wang Y H, Song H H, Li L L, Shi D 2016 Chin. J. Lumin. 37 1545 (in Chinese) [朱彦旭, 王岳华, 宋会会, 李莱龙, 石栋 2016 发光学报 37 1545]
[16] Yang B, Liu X X, Li H 2015 Acta Phys. Sin. 64 038807 (in Chinese) [杨彪, 刘向鑫, 李辉 2015 物理学报 64 038807]
[17] Frunza R, Ricinschi D, Gheorghiu F 2011 J. Alloys Compd. 509 6242
[18] Li F 2015 M. S. Thesis (Harbin: Harbin Institute of Technology) (in Chinese) [李飞 2015 硕士学位论文 (哈尔滨: 哈尔滨工业大学)]
[19] Li J H 2009 M. S. Thesis (Shanxi: North University of China) (in Chinese) [李珺泓 2009 硕士学位论文 (山西: 中北大学)]
[20] Wang C, Zhang J C, Hao Y, Yang Y 2006 Chin. J. Semicond. 27 1436 (in Chinese) [王冲, 张进城, 郝跃, 杨燕 2006 半导体学报 27 1436]
[21] Neamen D H (translated by Zhao Y Q, Yao S Y, Xie X D) 2010 Semiconductor Physics and Devices: Basic Principles (Beijing: Electronics Industry Press) p211, 212 (in Chinese) [尼曼 D H 著 (赵毅强, 姚素英, 解晓东 译) 2010 半导体物理与器件(北京: 电子工业出版社)第211, 212页]
[22] Qiao H, Yuan J, Xu Z Q, Che C Y, Lin S H, Wang Y S, Song J C, Liu Y, Khan Q, Hoh H Y, Pan C X, Li S J, Bao Q L 2015 ACS Nano 9 1886
[23] Liu Y H, Cao W, Li S J, Li Y, Sun S C, Fu K, Chen C Q, Zhang B S 2015 Chin. J. Lumin. 36 1167 (in Chinese) [刘翌寒, 曹伟, 李绍娟, 李洋, 孙世闯, 付凯, 陈长清, 张宝顺 2015 发光学报 36 1167]
[24] Sun Q 2012 M. S. Thesis (Shanghai: East China Normal University) (in Chinese) [孙倩 2012 硕士学位论文 (上海: 华东师范大学)]