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摘要: 本文通过电导率σ(T)和异质结电容-电压关系(C-V)的测量,研究了反应溅射制备的a-SiGe:H薄膜中亚稳态热缺陷。
Abstract: Thermally induced metastable defects in reactive sputtered a-SiGe:H films are studied by conductivity σ(T) and heterojunction capacitance-voltage (C-V) measure ments.