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物理学报. 1990, 39(10): 1661-1664.
doi: 10.7498/aps.39.1661.
反应溅射制备a-SiGe:H薄膜中亚稳态热缺陷的研究
- 收稿日期: 1989-12-21
- 刊出日期: 1990-05-05
摘要: 本文通过电导率σ(T)和异质结电容-电压关系(C-V)的测量,研究了反应溅射制备的a-SiGe:H薄膜中亚稳态热缺陷。
English Abstract
A STUDY ON THE METASTABLE THERMAL DEFECTS IN REACTIVELY SPUTTERED a-SiGe:H FILMS
- Received Date:
21 December 1989
- Published Online:
05 May 1990
Abstract: Thermally induced metastable defects in reactive sputtered a-SiGe:H films are studied by conductivity σ(T) and heterojunction capacitance-voltage (C-V) measure ments.
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