| 引用本文: |
|
| Citation: |
|
计量
- 文章访问数: 2606
- PDF下载量: 569
- 被引次数: 0
物理学报. 1993, 42(8): 1304-1310.
doi: 10.7498/aps.42.1304.
注硅半绝缘GaAs的深能级
- 收稿日期: 1992-11-10
- 刊出日期: 2005-07-10
摘要: 用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E01,E02,E03和E04。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E04与EL2有关,但不是EL2缺陷。E04的电子
English Abstract
DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE
- Received Date:
10 November 1992
- Published Online:
10 July 2005
Abstract: The deep centers in Si-implanted LEC semi-insulator gallium arsenide have been carefully studied using the deep level transient spectroscopy (DLTS) technique. The results are as follows. The four majority carrier traps,E01 ,E02,E03 and E04 have been observed in the active regions of the Si-implanted LEC semi-insulator gallium arsenide after high temperature an-nealling, and their electron apparent activation energies are 0.298, 0.341, 0. 555 and 0. 821 eV respectively. The E04 trap is related to the EL2. The activation energy of the electron capture cross section of E04 is 0. 119 eV Three minority carrier (hole) traps have been newly found in the same active regions. The hole apparent activation energy of the H03 trap is 0. 713 eV and its concentration is about 2. 8×1016cm-3.
下载: