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摘要: 采用脉冲激光法（PLD）在Si衬底上沉积Zn1-xMgxO薄膜.x射线衍射(XRD)表明薄膜为c轴取向，（002）峰的半高宽仅为0.211°，且没有MgO的相偏析.透射电子显微镜可以清楚看到Zn1-xMgxO薄膜的c轴择优取向.在选区电子衍射图中可以看到Zn1-xMgxO结晶薄膜整齐的衍射斑点.室温下对Zn1-xMgxO薄膜进行了光致荧光光谱分析，发现其带边发射峰相对ZnO晶体有0.4eV的蓝移，带边发射峰与杂质发射峰的强度之比高达159.Zn1-xMgxO结晶薄膜质量良好，显示了应用于光电器件的潜力.
Abstract: High-quality Zn1-xMgxO thin film was grown on Si substrate by pulsed laser deposition (PLD). x-ray diffraction patterns indicated that the film was c-axis oriented, the full width at half maximum of (002) peak was only 0.211°, and no phase separation was observed. Transmission electron microscopy(TEM) verified the c-axis orientation of the Zn1-xMgxO thin film. Regular diffraction spots can be observed by TEM. Photoluminescence spectrum was measured at room temperature. The near-band-energy emission peak of the Zn1-xMgxO thin film has a blue shift of 0.4 eV from that of ZnO, and the ratio of near-band-energy to the defect-level peak intensity was as large as 159. These results indicate that Zn1-xMgxO thin film can have potential applications in optoelectronic devices.
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