| 引用本文: |
|
| Citation: |
|
计量
- 文章访问数: 3626
- PDF下载量: 1431
- 被引次数: 0
物理学报. 2006, 55(2): 914-919.
doi: 10.7498/aps.55.914.
六方相InGaN外延膜的显微Raman散射
- 收稿日期: 2005-03-25
- 修回日期: 2005-06-27
- 刊出日期: 2006-01-05
摘要: 用X射线衍射(XRD)技术和显微Raman散射方法对金属有机化学气相沉积(MOCVD)法生长的六方相InxGa1-xN薄膜样品进行了研究，观察到了相分离现象和LO声子-等离子耦合模(LPP+)，讨论了InxGa1-xN的A1(LO)模被屏蔽的主要物理机制.同时，对Raman谱中E2和A1(TO)声子模进行了分析和讨论.在InxGa1-xN样品的低温Raman谱中还观察到单电子跃迁产生的Raman散射信号.
-
关键词:
- Raman散射 /
- X射线衍射 /
- 相分离 /
- 应力 /
- LO声子-等离子耦合
English Abstract
Micro-Raman scattering study of hexagonal InGaN epitaxial layer
- Received Date:
25 March 2005
- Accepted Date:
27 June 2005
- Published Online:
05 January 2006
Abstract: Hexagonal InxGa1-xN film grown by metalorganic chemical vapor deposition (MOCVD) was studied by Micro-Raman scattering and X-ray diffraction. The phase separation was observed in InxGa1-xN, the biaxial stress was measured by both Raman and X-ray diffraction. In Raman spectroscopy, the A1(LO) mode of InxGa1-xN is absent. Instead, the LO phonon-plasmon coupled mode (LPP+) was observed at about 778 cm-1. The carrier concentration was determined by the frequency of the coupled mode. The E2 and A1(TO)modes of InxGa1-xN layer exhibit a down-shift compare to those of GaN layer. At low temperature, the peak induced by electronic transition was observed in Raman spectra of InxGa1-xN.
下载: