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摘要: 使用射频磁控溅射法成功制备了不同掺杂浓度（0—7at.%）的ZnO:Ni薄膜.X射线衍射的θ-2θ和摇摆曲线扫描结果表明，5at.%Ni掺杂ZnO薄膜具有沿c轴方向最佳的择优取向生长特性，（002）衍射峰向大角度方向移动揭示了Ni杂质被掺入ZnO晶格中占据Zn位.ZnO:Ni薄膜具有较好的可见光透明特性，拟合发现薄膜的光学带隙随Ni掺杂量的增加由3.272 eV线性降低到3.253 eV.未掺杂薄膜在550 nm处呈现出一个绿色发光峰，掺入Ni杂质后薄膜主要表现了以430 nm为中心的蓝色发光，分析认为它们分别源于薄膜中O空位和Zn填隙缺陷发光.
Abstract: ZnO:Ni films with different doping concentrations （0—7at.%） have been deposited by radio frequency magnetron sputtering. The results of x-ray diffraction, including θ-2θ mode and rocking curve mode, indicate that the film doped with 5at.% Ni shows an excellent preferred growth along c-axis orientation. The （002） diffraction peak shifts to a larger angle, which implies that Ni atoms are incorporated into the ZnO lattice. For ZnO:Ni films with good transparency in the visible range, the optical band gap evaluated by the fitting method decreases linearly from 3.272 to 3.253 eV with increasing Ni concentration. Undoped ZnO film exhibits a green emission peak and Ni-doped ZnO films mainly emit a blue photoluminescence centred at 430 nm, we believe that they might be ascribed to crystal defects of oxygen vacancies and interstitial zinc, respectively.
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