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详细地介绍了计算线宽展宽因子(因子)的理论基础及推导过程, 建立了因子的简便模型. 该模型分别考虑了带间跃迁、带隙收缩和自由载流子效应对因子的影响, 利用不同载流子浓度下的增益曲线得到光子能量随载流子浓度的变化速率以及微分增益, 进而对因子进行近似计算. 模拟计算了InGaAs/GaAs量子阱激光器的增益曲线及因子的大小, 计算结果与文献报道的实验值相符. 进一步讨论了InGaAs/GaAs量子阱阱宽及In组分对因子的影响. 结果表明,因子随In组分和阱宽的增加而增加.
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关键词:
- InGaAs/GaAs /
- 线宽展宽因子 /
- 应变量子阱 /
- 增益
[1] Govind P A, Charles M B 1993 Photon. Technol. Lett. 5 640
[2] Henry C H 1982 Quantum Electron 18 259
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[4] Song Z X, Yu Y G, Ye H Y, Zhang X 2008 Study on Optical Communications2 60 (in Chinese) [宋兆欣, 禹延光, 叶会英, 张旭 2008 光通信研究 2 60]
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[8] Gan K G, Bowers J E 2004 Photon. Technol. Lett. 16 1256
[9] MacKenzie R, Lim J J, Bull S, Chao S, Sujecki S, Sadeghi M,Wang S M, Larsson A, Melanen P, Sipila P, Uusimaa P, Larkins EC 2007 IET Optoelectron 1 284
[10] Vahala K, Chiu L C, Margalit S, Yariv A 1983 Appl. Phys. Lett.43 631
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[12] Lee S S, Figueroal L, Ramaswamy R 1989 J. Quantum Electronics25 862
[13] Park S H 2007 J. Korean Phys. Soc. 51 2077
[14] Villafranca A, Villafranca A, Giuliani G, Garces I 2009 Photon.Technol. Lett. 21 1256
[15] Du B X 2004 Principle of Semiconductor Lasers (Beijing: EngineryIndustry Press) (in Chinese) [杜宝勋 2004 半导体激光器原理(北京: 兵器工业出版社)]
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[17] Miloszewski J M, Wartak M S, Weetman P, Hess O 2009 J. Appl.Phys. 106 063102
[18] Qiyuan M M (Translated by Zhou N S) 2002 The Fundation ofSemiconductor Lasers (Beijing: Science Press) p47 (in Chinese) [栖原敏明著, 周南生译 2002 半导体激光器基础 (北京:科学出版社)第47页]
[19] Joachim P 2003 Semiconductor Optoelectronic Devices (California:Academic Press) pp7,94
[20] Hua L L, Song Y R, Zhang P, Zhang X, Guo K 2010 Acta Opt.Sin. 30 1702 (in Chinese) [华玲玲, 宋晏蓉, 张鹏, 张晓, 郭凯 2010 光学学报 30 1702
[21] Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 物理学报 53 218]
[22] Shun L C 1991 Phys. Rev. B 43 9649
[23] Martin G, Botchkarev A, Rockett A, Morkoc H 1996 Appl. Phys.Lett. 68 2541
[24] Huang D X 1994 Semiconductor Optoelectronics (Chengdu: Pressof University of Electric Science and Technology of China) p207(in Chinese) [黄德修1994半导体光电子学(成都:电子科技大学出版社) 第207页]
[25] Xin G F, Chen G Y, Hua J Z, Zhao R, Kang Z L, Feng R Z, An ZF 2004 Acta Phys.Sin. 53 1293(in Chinese) [辛国锋, 陈国鹰, 花吉珍, 赵润, 康志龙, 冯荣珠, 安振峰 2004 物理学报 53 1293]
[26] Gai H X, Li J J, Han J, Xing Y H, Deng J, Yu B, Shen G D, ChenJ X 2005 Chin. J. Quantum Electronics 22 85 (in Chinese) [盖红星, 李建军, 韩军, 邢艳辉, 邓军, 俞波, 沈光地, 陈建新 2005 量子电子学报 22 85]
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[1] Govind P A, Charles M B 1993 Photon. Technol. Lett. 5 640
[2] Henry C H 1982 Quantum Electron 18 259
[3] Yu Y G, Yan Y X 2006 Laser & Infrared 36 114 (in Chinese) [禹延光, 闫艳霞 2006 激光与红外 36 114]
[4] Song Z X, Yu Y G, Ye H Y, Zhang X 2008 Study on Optical Communications2 60 (in Chinese) [宋兆欣, 禹延光, 叶会英, 张旭 2008 光通信研究 2 60]
[5] Seo W H, Donegan J F 2003 Appl. Phys. Lett. 82 505
[6] Schlichenmaier C, Koch S W, Chow W W 2002 Appl. Phys. Lett.81 2944
[7] Rodriguez D, Borruel L, Esquivias I, Wenzel H, Sumpf B, ErbertG 2004 Photon. Technol. Lett. 16 1432
[8] Gan K G, Bowers J E 2004 Photon. Technol. Lett. 16 1256
[9] MacKenzie R, Lim J J, Bull S, Chao S, Sujecki S, Sadeghi M,Wang S M, Larsson A, Melanen P, Sipila P, Uusimaa P, Larkins EC 2007 IET Optoelectron 1 284
[10] Vahala K, Chiu L C, Margalit S, Yariv A 1983 Appl. Phys. Lett.43 631
[11] Kano F, Yamanaka T, Yamamoto N, Yoshikuni Y, Mawatari H,Tohmori Y, Yamamoto M, Yokoyama K 1993 J. Quantum Electronics29 1553
[12] Lee S S, Figueroal L, Ramaswamy R 1989 J. Quantum Electronics25 862
[13] Park S H 2007 J. Korean Phys. Soc. 51 2077
[14] Villafranca A, Villafranca A, Giuliani G, Garces I 2009 Photon.Technol. Lett. 21 1256
[15] Du B X 2004 Principle of Semiconductor Lasers (Beijing: EngineryIndustry Press) (in Chinese) [杜宝勋 2004 半导体激光器原理(北京: 兵器工业出版社)]
[16] Gerhardt N C, Hofmann M R, Hader J, Moloney J V, Koch S W, Riechert H 2004 Appl. Phys. Lett. 84 1
[17] Miloszewski J M, Wartak M S, Weetman P, Hess O 2009 J. Appl.Phys. 106 063102
[18] Qiyuan M M (Translated by Zhou N S) 2002 The Fundation ofSemiconductor Lasers (Beijing: Science Press) p47 (in Chinese) [栖原敏明著, 周南生译 2002 半导体激光器基础 (北京:科学出版社)第47页]
[19] Joachim P 2003 Semiconductor Optoelectronic Devices (California:Academic Press) pp7,94
[20] Hua L L, Song Y R, Zhang P, Zhang X, Guo K 2010 Acta Opt.Sin. 30 1702 (in Chinese) [华玲玲, 宋晏蓉, 张鹏, 张晓, 郭凯 2010 光学学报 30 1702
[21] Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 物理学报 53 218]
[22] Shun L C 1991 Phys. Rev. B 43 9649
[23] Martin G, Botchkarev A, Rockett A, Morkoc H 1996 Appl. Phys.Lett. 68 2541
[24] Huang D X 1994 Semiconductor Optoelectronics (Chengdu: Pressof University of Electric Science and Technology of China) p207(in Chinese) [黄德修1994半导体光电子学(成都:电子科技大学出版社) 第207页]
[25] Xin G F, Chen G Y, Hua J Z, Zhao R, Kang Z L, Feng R Z, An ZF 2004 Acta Phys.Sin. 53 1293(in Chinese) [辛国锋, 陈国鹰, 花吉珍, 赵润, 康志龙, 冯荣珠, 安振峰 2004 物理学报 53 1293]
[26] Gai H X, Li J J, Han J, Xing Y H, Deng J, Yu B, Shen G D, ChenJ X 2005 Chin. J. Quantum Electronics 22 85 (in Chinese) [盖红星, 李建军, 韩军, 邢艳辉, 邓军, 俞波, 沈光地, 陈建新 2005 量子电子学报 22 85]
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