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InSe的高压电输运性质研究

吴宝嘉 李燕 彭刚 高春晓

InSe的高压电输运性质研究

吴宝嘉, 李燕, 彭刚, 高春晓
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导出引用
  • 高压下对InSe样品进行原位电阻率和霍尔效应测量. 电阻率测量结果显示, 样品在5–6 GPa区间呈现金属特性, 在12 GPa 的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变, 且具有金属特性. 霍尔效应测量结果显示, 样品在6.6 GPa由p型半导体转变成n型半导体, 电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的.
    • 基金项目: 国家自然科学基金(批准号: 11074094, 11164031, 51272224)和国家重点基础研究发展计划(批准号: 2011CB808204)资助的课题.
    [1]

    Sánchez-Royo J F, Segura A, Lang O, Schaar E, Pettenkofer C, Jaegermann W, Roa L, Chevy A 2001 J. Appl. Phys. 90 2818

    [2]

    Putnam R S and Lancaster D G 1999 Appl. Opt. 38 1513

    [3]

    Kaindl R A, Eickemeyer F, Woerner M, Elsaesser T 1999 Appl. Phys. Lett. 75 1060

    [4]

    Martinez-Pastor J, Segura A, Valdes J L, Chevy A 1987 J. Appl. Phys. 62 1477

    [5]

    Julien C, Jouanne M, Burret P A, Balkanski M 1988 Solid State Lonics 28-30 1167

    [6]

    Balkanski M, Gomesda C P, Wallis R F 1996 Basic Solid State Phys. 194 175

    [7]

    Bridgman P W 1921 Am. Acad. Arts and Sci. 56 61

    [8]

    Bridgman P W 1951 The British J. Philosophy Sci. 1 257

    [9]

    Jayaraman A 1983 Rev. Modern Phys. 55 65

    [10]

    Segura A, Errandonea D Martínez-García D, Manjón F J, Chevy A, Tobias G, Ordejón P, Canadell E 2007 Phys. Solid State B 244 162

    [11]

    Polian A, Kunc K, Khun A 1976 Solid State Commun. 19 1709

    [12]

    Carlone C, Jandl S, Shanks H R 1981 Phys. Solid State B 103 123

    [13]

    Kuroda N, Ueno O, Nishina Y 1987 Phys. Rev. B 35 3860

    [14]

    Gauthier M, Polian A, Besson J M, Chevy A 1989 Phys. Rev. B 40 3837

    [15]

    Likforman A, Carre D, Etienne J, Bachet B 1975 Acta Crystallograph. B 31 1252

    [16]

    Manjon F J, Errandonea D, Segura A, Chervin J C, Munoz V 2002 High Pressure Research 22 261

    [17]

    Errandonea D, Martínez-García D, Segura A, Ruiz-Fuertes J, Lacomba-Perales R, Fages V, Chevy A, Roa L, Mnoz-San J V 2006 High Pressure Research 26 513

    [18]

    Vezzoli G C 1971 Mater. Res. Bull. 6 1201

    [19]

    Ferlat G, Martínez-García D, San Miguel A, Aouizerat A, Muñoz-Sanjosé V 2004 High Pressure Research 24 111

    [20]

    Errandonea D, Martínez-García D, Segura A, Haines J, Machado-Charry E, Canadell E, Chervin J C, Chevy A 2008 Phys. Rev. B 77 045208

    [21]

    Errandonea D, Martínez-García D, Segura A, Chevy A, Tobias G, Canadell E, Ordejon P 2006 Phys. Rev. B 73 235202

    [22]

    Takemura K, Minomura S, Shimomura O, Fujii Y 1980 Phys. Rev. Lett. 45 1881

    [23]

    Hu T J, Cui X Y, Gao Y, Han Y H, Liu C L, Liu B, Liu H, Ma Y Z, Gao C X 2010 Rev. Sci. Instrum. 81 5101

    [24]

    Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912-1

    [25]

    Wu B J, Han Y H, Peng G, Liu C L, Wang Y, Gao C X 2010 Acta Phys. Sin. 59 4265 (in Chinese) [吴宝嘉, 韩永昊, 彭刚, 刘才龙, 王月, 高春晓 2010 物理学报 59 4265]

    [26]

    Zhang J K, Han Y H, Liu C L, Ren W B, Li Y, Wang Q L, Su N N, Li Y Q, Ma B W, Ma Y Z, Gao C X 2011 J. Phys. Chem. C 115 20710

    [27]

    Chen A L, Yu P Y, Taylor R D 1993 Phys. Rev. Lett. 71 4011

    [28]

    Manjón F J, Errandonea D, Segura A, Muñoz V, Tobías G, Ordejón P, Canadell E 2001 Phys. Rev. B 63 125330

    [29]

    Segura A, Manjón F J, Errandonea D, Pellicer-Porres J, Muñoz V, Tobias G, Ordejón P, Canadell E, San Miguel A, Sánchez-Portal D 2003 Phys. Solid State B 235 267

  • [1]

    Sánchez-Royo J F, Segura A, Lang O, Schaar E, Pettenkofer C, Jaegermann W, Roa L, Chevy A 2001 J. Appl. Phys. 90 2818

    [2]

    Putnam R S and Lancaster D G 1999 Appl. Opt. 38 1513

    [3]

    Kaindl R A, Eickemeyer F, Woerner M, Elsaesser T 1999 Appl. Phys. Lett. 75 1060

    [4]

    Martinez-Pastor J, Segura A, Valdes J L, Chevy A 1987 J. Appl. Phys. 62 1477

    [5]

    Julien C, Jouanne M, Burret P A, Balkanski M 1988 Solid State Lonics 28-30 1167

    [6]

    Balkanski M, Gomesda C P, Wallis R F 1996 Basic Solid State Phys. 194 175

    [7]

    Bridgman P W 1921 Am. Acad. Arts and Sci. 56 61

    [8]

    Bridgman P W 1951 The British J. Philosophy Sci. 1 257

    [9]

    Jayaraman A 1983 Rev. Modern Phys. 55 65

    [10]

    Segura A, Errandonea D Martínez-García D, Manjón F J, Chevy A, Tobias G, Ordejón P, Canadell E 2007 Phys. Solid State B 244 162

    [11]

    Polian A, Kunc K, Khun A 1976 Solid State Commun. 19 1709

    [12]

    Carlone C, Jandl S, Shanks H R 1981 Phys. Solid State B 103 123

    [13]

    Kuroda N, Ueno O, Nishina Y 1987 Phys. Rev. B 35 3860

    [14]

    Gauthier M, Polian A, Besson J M, Chevy A 1989 Phys. Rev. B 40 3837

    [15]

    Likforman A, Carre D, Etienne J, Bachet B 1975 Acta Crystallograph. B 31 1252

    [16]

    Manjon F J, Errandonea D, Segura A, Chervin J C, Munoz V 2002 High Pressure Research 22 261

    [17]

    Errandonea D, Martínez-García D, Segura A, Ruiz-Fuertes J, Lacomba-Perales R, Fages V, Chevy A, Roa L, Mnoz-San J V 2006 High Pressure Research 26 513

    [18]

    Vezzoli G C 1971 Mater. Res. Bull. 6 1201

    [19]

    Ferlat G, Martínez-García D, San Miguel A, Aouizerat A, Muñoz-Sanjosé V 2004 High Pressure Research 24 111

    [20]

    Errandonea D, Martínez-García D, Segura A, Haines J, Machado-Charry E, Canadell E, Chervin J C, Chevy A 2008 Phys. Rev. B 77 045208

    [21]

    Errandonea D, Martínez-García D, Segura A, Chevy A, Tobias G, Canadell E, Ordejon P 2006 Phys. Rev. B 73 235202

    [22]

    Takemura K, Minomura S, Shimomura O, Fujii Y 1980 Phys. Rev. Lett. 45 1881

    [23]

    Hu T J, Cui X Y, Gao Y, Han Y H, Liu C L, Liu B, Liu H, Ma Y Z, Gao C X 2010 Rev. Sci. Instrum. 81 5101

    [24]

    Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912-1

    [25]

    Wu B J, Han Y H, Peng G, Liu C L, Wang Y, Gao C X 2010 Acta Phys. Sin. 59 4265 (in Chinese) [吴宝嘉, 韩永昊, 彭刚, 刘才龙, 王月, 高春晓 2010 物理学报 59 4265]

    [26]

    Zhang J K, Han Y H, Liu C L, Ren W B, Li Y, Wang Q L, Su N N, Li Y Q, Ma B W, Ma Y Z, Gao C X 2011 J. Phys. Chem. C 115 20710

    [27]

    Chen A L, Yu P Y, Taylor R D 1993 Phys. Rev. Lett. 71 4011

    [28]

    Manjón F J, Errandonea D, Segura A, Muñoz V, Tobías G, Ordejón P, Canadell E 2001 Phys. Rev. B 63 125330

    [29]

    Segura A, Manjón F J, Errandonea D, Pellicer-Porres J, Muñoz V, Tobias G, Ordejón P, Canadell E, San Miguel A, Sánchez-Portal D 2003 Phys. Solid State B 235 267

  • 引用本文:
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  • 被引次数: 0
出版历程
  • 收稿日期:  2012-08-09
  • 修回日期:  2013-03-25
  • 刊出日期:  2013-07-05

InSe的高压电输运性质研究

  • 1. 延边大学理学院, 延吉 133002;
  • 2. 吉林大学, 超硬材料国家重点实验室, 长春 130012
    基金项目: 

    国家自然科学基金(批准号: 11074094, 11164031, 51272224)和国家重点基础研究发展计划(批准号: 2011CB808204)资助的课题.

摘要: 高压下对InSe样品进行原位电阻率和霍尔效应测量. 电阻率测量结果显示, 样品在5–6 GPa区间呈现金属特性, 在12 GPa 的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变, 且具有金属特性. 霍尔效应测量结果显示, 样品在6.6 GPa由p型半导体转变成n型半导体, 电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的.

English Abstract

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