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电沉积Cu-In-Ga金属预制层的硒硫化研究

张超 敖建平 毕金莲 姚立勇 孙国忠 周志强 何青 孙云

电沉积Cu-In-Ga金属预制层的硒硫化研究

张超, 敖建平, 毕金莲, 姚立勇, 孙国忠, 周志强, 何青, 孙云
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导出引用
  • 以H2S气体作为硫源、固态蒸发硒蒸气作为硒源对电沉积Cu-In-Ga金属预制层进行硒硫化处理. 通过电沉积Cu-In-Ga金属预制层在不同衬底温度下硒化、硫化和硒硫化的对比实验,发现CuInS2相和CuIn(S,Se)2相优先生成,抑制了CuInSe2相的生成,促使InSe相薄膜向内部扩散,减弱了薄膜两相分离现象. 采用先硒化后硒硫化处理工艺优化了Cu(In,Ga)(S,Se)2薄膜的制备工艺,在250 ℃预硒化得到了开路电压为570 mV的太阳电池,在更高的预硒化温度得到了较大短路电流的太阳电池,最终优化得到了效率达到10.4%的电池器件.
    • 基金项目: 高等学校博士学科点专项科研基金(批准号:20090031110031)资助的课题.
    [1]

    Lundberg O Lu J, Rockett A, Edoff M, Stolt L 2003 Journal of Physics and Chemistry of Solids 64 1499

    [2]

    Lai Y Q, Kuang S S, Liu F Y, Zhang Z A, Liu J, Li J, Liu Y X 2010 Acta Phys. Sin. 59 1196 (in Chinese) [赖延清, 匡三双, 刘芳洋, 张治安, 刘军, 李劼, 刘业翔 2010 物理学报 59 1196]

    [3]

    Nakada T, Ohbo H, Watanabe T, Nakazawa H, Matsui M, Kunioka A 1997 Solar Energy Materials and Solar Cells 49 285

    [4]

    Kim K, Park H, Kim W K, Hanket G M, Shafarman W N 2012 Proc. 38th IEEE PVSC, Austin Texas, June 3–8, 2012

    [5]

    Kim K, Hanket G M, Huynh T, Shafarman W N 2012 Journal of Applied Physics 111 083710

    [6]

    Kim K, Kimberly E L, Damiani A, Hanket G M, Shafarman W N 2012 Proc. 38th IEEE PVSC, Austin Texas, June 3–8, 2012

    [7]

    Kim K Park H Kim W K Hanket G M Shafarman W N 2013 IEEE Journal of Photovoltaics 3 446

    [8]

    Basol B M, Halani A, Leidholm C, Norsworthy G, Kapur V K, Swartzlander A, Matson R 2000 Prog. Photovolt. Res. Appl. 8 227

    [9]

    Nagoya Y, Kushiya K, Tachiyuki M, Yamase O 2001 Solar Energy Materials & Solar Cells 67 247

    [10]

    Li W, Zhao Y M, Liu X J, Ao J P, Sun Y 2011 Chin. Phys. B 20 068102

    [11]

    Zhang C, Ao J P, Jiang T, Sun G Z, Zhou Z Q, Sun Y 2013 Acta Phys. Sin. 62 078801 (in Chinese) [张超, 敖建平, 姜韬, 孙国忠, 周志强, 孙云 2013 物理学报 62 078801]

    [12]

    Kim W K 2006 Ph. D. Dissertation (US: University of Florida)

    [13]

    Kim W K, Payzant E A, Kim S, Speakman S A, Crisalle O D, Anderson T J 2008 Journal of Crystal Growth 310 2987

    [14]

    Hanket G M, Shafarman W N, McCandless B E, Birkmrie R W 2007 Journal of Applied Physics 102 074922

    [15]

    Roine A.HSC Chemistry v5.0. Outokumpu Research 2002 Pori Finland

    [16]

    Hölzing A, Schurr R, Yoo H, Wibowo R A, Lechner R, Palm J, Jost S, Hock R 2012 Thin Solid Films (in press)

    [17]

    Weber A, Kötschau I, Schock H W 2007 Thin Solid Films 515 6252

    [18]

    Hölzing A, Schurr R, Jost S, Palm J, Deseler K, Wellmann P, Hock R 2011 Thin Solid Films 519 7197

    [19]

    Mönig H, Fischer C H, Caballero R, Kaufmann C A, Allsop N, Gorgoi M, Klenk R, Schock H W, Lehmann S, Lux-Steiner M C, Lauermann I 2009 Acta Materialia 57 3645

    [20]

    Han A J, Zhang Y, Liu W, Li B Y, Sun Y 2012 Applied Surface Science 258 9747

    [21]

    Tuttle J R, Contreras M, Bode M H, Niles D, Albin D S, Matson R, Gabor A M, Tennant A, Duda A, Noufi R 1995 J. Appl. Phys. 77 153

  • [1]

    Lundberg O Lu J, Rockett A, Edoff M, Stolt L 2003 Journal of Physics and Chemistry of Solids 64 1499

    [2]

    Lai Y Q, Kuang S S, Liu F Y, Zhang Z A, Liu J, Li J, Liu Y X 2010 Acta Phys. Sin. 59 1196 (in Chinese) [赖延清, 匡三双, 刘芳洋, 张治安, 刘军, 李劼, 刘业翔 2010 物理学报 59 1196]

    [3]

    Nakada T, Ohbo H, Watanabe T, Nakazawa H, Matsui M, Kunioka A 1997 Solar Energy Materials and Solar Cells 49 285

    [4]

    Kim K, Park H, Kim W K, Hanket G M, Shafarman W N 2012 Proc. 38th IEEE PVSC, Austin Texas, June 3–8, 2012

    [5]

    Kim K, Hanket G M, Huynh T, Shafarman W N 2012 Journal of Applied Physics 111 083710

    [6]

    Kim K, Kimberly E L, Damiani A, Hanket G M, Shafarman W N 2012 Proc. 38th IEEE PVSC, Austin Texas, June 3–8, 2012

    [7]

    Kim K Park H Kim W K Hanket G M Shafarman W N 2013 IEEE Journal of Photovoltaics 3 446

    [8]

    Basol B M, Halani A, Leidholm C, Norsworthy G, Kapur V K, Swartzlander A, Matson R 2000 Prog. Photovolt. Res. Appl. 8 227

    [9]

    Nagoya Y, Kushiya K, Tachiyuki M, Yamase O 2001 Solar Energy Materials & Solar Cells 67 247

    [10]

    Li W, Zhao Y M, Liu X J, Ao J P, Sun Y 2011 Chin. Phys. B 20 068102

    [11]

    Zhang C, Ao J P, Jiang T, Sun G Z, Zhou Z Q, Sun Y 2013 Acta Phys. Sin. 62 078801 (in Chinese) [张超, 敖建平, 姜韬, 孙国忠, 周志强, 孙云 2013 物理学报 62 078801]

    [12]

    Kim W K 2006 Ph. D. Dissertation (US: University of Florida)

    [13]

    Kim W K, Payzant E A, Kim S, Speakman S A, Crisalle O D, Anderson T J 2008 Journal of Crystal Growth 310 2987

    [14]

    Hanket G M, Shafarman W N, McCandless B E, Birkmrie R W 2007 Journal of Applied Physics 102 074922

    [15]

    Roine A.HSC Chemistry v5.0. Outokumpu Research 2002 Pori Finland

    [16]

    Hölzing A, Schurr R, Yoo H, Wibowo R A, Lechner R, Palm J, Jost S, Hock R 2012 Thin Solid Films (in press)

    [17]

    Weber A, Kötschau I, Schock H W 2007 Thin Solid Films 515 6252

    [18]

    Hölzing A, Schurr R, Jost S, Palm J, Deseler K, Wellmann P, Hock R 2011 Thin Solid Films 519 7197

    [19]

    Mönig H, Fischer C H, Caballero R, Kaufmann C A, Allsop N, Gorgoi M, Klenk R, Schock H W, Lehmann S, Lux-Steiner M C, Lauermann I 2009 Acta Materialia 57 3645

    [20]

    Han A J, Zhang Y, Liu W, Li B Y, Sun Y 2012 Applied Surface Science 258 9747

    [21]

    Tuttle J R, Contreras M, Bode M H, Niles D, Albin D S, Matson R, Gabor A M, Tennant A, Duda A, Noufi R 1995 J. Appl. Phys. 77 153

  • 引用本文:
    Citation:
计量
  • 文章访问数:  1628
  • PDF下载量:  457
  • 被引次数: 0
出版历程
  • 收稿日期:  2013-07-01
  • 修回日期:  2013-09-07
  • 刊出日期:  2013-12-05

电沉积Cu-In-Ga金属预制层的硒硫化研究

  • 1. 南开大学光电子薄膜器件与技术研究所, 天津市光电子薄膜器件与技术重点实验室, 光电信息技术科学教育部重点实验室, 天津 300071
    基金项目: 

    高等学校博士学科点专项科研基金(批准号:20090031110031)资助的课题.

摘要: 以H2S气体作为硫源、固态蒸发硒蒸气作为硒源对电沉积Cu-In-Ga金属预制层进行硒硫化处理. 通过电沉积Cu-In-Ga金属预制层在不同衬底温度下硒化、硫化和硒硫化的对比实验,发现CuInS2相和CuIn(S,Se)2相优先生成,抑制了CuInSe2相的生成,促使InSe相薄膜向内部扩散,减弱了薄膜两相分离现象. 采用先硒化后硒硫化处理工艺优化了Cu(In,Ga)(S,Se)2薄膜的制备工艺,在250 ℃预硒化得到了开路电压为570 mV的太阳电池,在更高的预硒化温度得到了较大短路电流的太阳电池,最终优化得到了效率达到10.4%的电池器件.

English Abstract

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