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为降低绝缘体上硅(SOI)横向双扩散金属氧化物半导体(LDMOS)器件的导通电阻,同时提高器件击穿电压,提出了一种具有纵向漏极场板的低导通电阻槽栅槽漏SOI-LDMOS器件新结构. 该结构特征为采用了槽栅槽漏结构,在纵向上扩展了电流传导区域,在横向上缩短了电流传导路径,降低了器件导通电阻;漏端采用了纵向漏极场板,该场板对漏端下方的电场进行了调制,从而减弱了漏极末端的高电场,提高了器件的击穿电压. 利用二维数值仿真软件MEDICI对新结构与具有相同器件尺寸的传统SOI结构、槽栅SOI结构、槽栅槽漏SOI 结构进行了比较. 结果表明:在保证各自最高优值的条件下,与这三种结构相比,新结构的比导通电阻分别降低了53%,23%和提高了87%,击穿电压则分别提高了4%、降低了9%、提高了45%. 比较四种结构的优值,具有纵向漏极场板的槽栅槽漏SOI结构优值最高,这表明在四种结构中新结构保持了较低导通电阻,同时又具有较高的击穿电压.
[1] Tan Y, Cai J, Sin Johnny K O 2001 IEEE Trans. Electron Dev. 48 2428
[2] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 60 018501]
[3] Wang Y G, Luo X R, Ge R, Wu L J, Chen X, Yao G L, Lei T F, Wang Q, Fan J, Hu X R 2011 Chin. Phys. B 20 077304
[4] Luo X R, Zhang B, Li Z J, Guo Y F, Tang X W, Liu Y 2007 IEEE Electron Dev. Lett. 28 422
[5] Li Q, Zhang B, Li Z J 2008 Acta Phys. Sin. 57 6565 (in Chinese) [李琦, 张波, 李肇基 2008 物理学报 57 6565]
[6] Wu L J, Hu S D, Zhang B, Luo X R, Li Z J 2011 Chin. Phys. B 20 087101
[7] Wu L J, Zhang W T, Zhang B, Li Z J 2013 J. Semicond. 34 044008
[8] Hu C 1979 IEEE Trans. Electron Dev. 26 243
[9] Kawaguchi Y, Sano T, Nakagawa A 1999 IEEE International Electron Devices Meeting Washington DC, USA, December 5-8, 1999 p197
[10] Erlbacher T, Bauer A J, Frey L 2010 IEEE Electron Dev. Lett. 31 464
[11] Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X, Wei J 2012 Chin. Phys. B 21 068501
[12] Yue L, Zhang B, Li Z J 2012 IEEE Electron Dev. Lett. 33 1174
[13] Luo X R, Lei T F, Wang Y G, Yao G L, Jiang Y H, Zhou K, Wang P, Zhang Z Y 2012 IEEE Trans. Electron Dev. 59 504
[14] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B, Udrea F 2011 IEEE Electron Dev. Lett. 32 185
[15] Baba Y, Yanagiya S, Koshino Y, Udo Y 1994 Proceedings of the 6th International Power Semiconductor Devices and ICs Davos, Switzerland, May 31-June 2, 1994 p183
[16] Kim S L, Yang H Y, Choi Y I 2000 Proceedings of the 22nd International Conference on Microelectronics Nis, Serbia, May 14-17, 2000 p641
[17] Ge R, Luo X R, Jiang Y H, Zhou K, Wang P, Wang Q, Wang Y G, Zhang B, Li Z J 2012 J. Semicond. 33 074005
[18] Zhang H P, Jiang L F, Sun L L, Li W J, Zhou L, Hua B X, Xu L Y, Lin M 2007 International Symposium on Communications and Information Technologies Sydney, Australia, October 17-19, 2007 p34
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[1] Tan Y, Cai J, Sin Johnny K O 2001 IEEE Trans. Electron Dev. 48 2428
[2] Bi J S, Hai C H, Han Z S 2011 Acta Phys. Sin. 60 018501 (in Chinese) [毕津顺, 海潮和, 韩郑生 2011 60 018501]
[3] Wang Y G, Luo X R, Ge R, Wu L J, Chen X, Yao G L, Lei T F, Wang Q, Fan J, Hu X R 2011 Chin. Phys. B 20 077304
[4] Luo X R, Zhang B, Li Z J, Guo Y F, Tang X W, Liu Y 2007 IEEE Electron Dev. Lett. 28 422
[5] Li Q, Zhang B, Li Z J 2008 Acta Phys. Sin. 57 6565 (in Chinese) [李琦, 张波, 李肇基 2008 物理学报 57 6565]
[6] Wu L J, Hu S D, Zhang B, Luo X R, Li Z J 2011 Chin. Phys. B 20 087101
[7] Wu L J, Zhang W T, Zhang B, Li Z J 2013 J. Semicond. 34 044008
[8] Hu C 1979 IEEE Trans. Electron Dev. 26 243
[9] Kawaguchi Y, Sano T, Nakagawa A 1999 IEEE International Electron Devices Meeting Washington DC, USA, December 5-8, 1999 p197
[10] Erlbacher T, Bauer A J, Frey L 2010 IEEE Electron Dev. Lett. 31 464
[11] Luo X R, Yao G L, Zhang Z Y, Jiang Y H, Zhou K, Wang P, Wang Y G, Lei T F, Zhang Y X, Wei J 2012 Chin. Phys. B 21 068501
[12] Yue L, Zhang B, Li Z J 2012 IEEE Electron Dev. Lett. 33 1174
[13] Luo X R, Lei T F, Wang Y G, Yao G L, Jiang Y H, Zhou K, Wang P, Zhang Z Y 2012 IEEE Trans. Electron Dev. 59 504
[14] Luo X R, Fan J, Wang Y G, Lei T F, Qiao M, Zhang B, Udrea F 2011 IEEE Electron Dev. Lett. 32 185
[15] Baba Y, Yanagiya S, Koshino Y, Udo Y 1994 Proceedings of the 6th International Power Semiconductor Devices and ICs Davos, Switzerland, May 31-June 2, 1994 p183
[16] Kim S L, Yang H Y, Choi Y I 2000 Proceedings of the 22nd International Conference on Microelectronics Nis, Serbia, May 14-17, 2000 p641
[17] Ge R, Luo X R, Jiang Y H, Zhou K, Wang P, Wang Q, Wang Y G, Zhang B, Li Z J 2012 J. Semicond. 33 074005
[18] Zhang H P, Jiang L F, Sun L L, Li W J, Zhou L, Hua B X, Xu L Y, Lin M 2007 International Symposium on Communications and Information Technologies Sydney, Australia, October 17-19, 2007 p34
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