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Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon

Zhang Xiao-Dan Zhao Ying Zhu Feng Wei Chang-Chun Mai Yao-Hua Gao Yan-Tao Sun Jian Geng Xin-Hua Xiong Shao-Zhen

Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon

Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Mai Yao-Hua, Gao Yan-Tao, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen
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  • Abstract views:  2797
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  • Received Date:  15 July 2004
  • Accepted Date:  03 November 2004
  • Published Online:  19 April 2005

Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon

  • 1. 南开大学光电子薄膜器件与技术研究所,天津 300071;光电子薄膜器件与技术天津市重点实验室,天津 300071;南开大学光电信息技术科学教育部重点实验室,天津 300071

Abstract: Oxygen contamination of samples fabricated by very high_frequency plasma_enhanced chemical vapor deposition with the variation of silane concentration and disc harge power was studied by secondary ion mass spectroscopy. The results showed t hat oxygen content in the samples depended strongly on the silane concentration and discharge power. Microcrystalline silicon thin films with higher crystallin e volume fraction has relatively higher oxygen content. Oxygen contamination of samples was also related with the background vacuum, especially for microcrystal line silicon thin films. Therefore, higher background vacuum is extremely necess ary in the fabrication of high-quality microcrystalline silicon thin films.

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