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Improved properties of light emitting diode by rough p-GaN grown at lower temperature

Xing Yan-Hui Han Jun Deng Jun Li Jian-Jun Xu Chen Shen Guang-Di

Improved properties of light emitting diode by rough p-GaN grown at lower temperature

Xing Yan-Hui, Han Jun, Deng Jun, Li Jian-Jun, Xu Chen, Shen Guang-Di
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  • Received Date:  14 April 2009
  • Accepted Date:  11 June 2009
  • Published Online:  15 February 2010

Improved properties of light emitting diode by rough p-GaN grown at lower temperature

  • 1. 北京工业大学电子信息与控制工程学院,北京 100124

Abstract: GaN: Mg films have been grown on sapphire at low temperature by metal-organic chemical vapor deposition, the properties of different source flux GaN: Mg materials were studied. When the molar ratio of CP2Mg and TMGa is between 1.4×10-3 and 2.5×10-3, the quality of crystal was improved with the increasing molar ration, and the hole concentration was increased linearly. When the molar ratio is 2.5×10-3,the concentration is equal to that of the film grown at higher temperature, and the surface morphology is more coarser. Taking the p-GaN layer with molar ratio of CP2Mg and TMGa of 2.5×10-3 as the light-emitting diode, when the inject current is 20 mA, the output light power was increased by 17.2%.

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