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Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Zhang He-Ming Wang Guan-Yu Hu Hui-Yong Wu Tie-Feng

Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong, Wu Tie-Feng
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  • PDF Downloads:  822
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Publishing process
  • Received Date:  15 April 2010
  • Accepted Date:  26 May 2010
  • Published Online:  05 January 2011

Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

  • 1. (1)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Micro-Electronics, Xidian University, Xi’an 710071, China; (2)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Micro-Electronics, Xidian University, Xi’an 710071, China;School of Information and Electronic Technology, Jiamusi University, Jiamusi 154007, China

Abstract: For scaled metal-oxide semiconductor field effect transistor (MOSFET) devices, normal operation is seriously affected by the static gate tunneling leakage current due to the ultra-thin gate oxide of MOSFET, and the novel MOSFET devices based on strained Si are similar to bulk Si devices in the effects. To illustrate the impact of gate leakage current on performance of novel strained Si device, a theoretical gate tunneling current predicting model by integral approach following the analysis of quasi-two-dimensional surface potential is presented in this study. On the basis of theoretical model, performance of MOSFET device was quantitatively studied in detail using ISE simulator, including different gate voltages and gate oxide thickness. The experiments show that simulation results agree well with theoretical analysis, and the theory and experimental data will contribute to future VLSI circuit design.

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