Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor

Wu Tie-Feng; Zhang He-Ming; Wang Guan-Yu; Hu Hui-Yong

doi:10.7498/aps.60.027305

Abstract

For scaled metal-oxide semiconductor field effect transistor (MOSFET) devices, normal operation is seriously affected by the static gate tunneling leakage current due to the ultra-thin gate oxide of MOSFET, and the novel MOSFET devices based on strained Si are similar to bulk Si devices in the effects. To illustrate the impact of gate leakage current on performance of novel strained Si device, a theoretical gate tunneling current predicting model by integral approach following the analysis of quasi-two-dimensional surface potential is presented in this study. On the basis of theoretical model, performance of MOSFET device was quantitatively studied in detail using ISE simulator, including different gate voltages and gate oxide thickness. The experiments show that simulation results agree well with theoretical analysis, and the theory and experimental data will contribute to future VLSI circuit design.

Keywords:

strained Si /
quasi-two-dimensional surface potential /
gate tunneling current /
predicting model

Authors and contacts

(1)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Micro-Electronics, Xidian University, Xi’an 710071, China; (2)Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Micro-Electronics, Xidian University, Xi’an 710071, China;School of Information and Electronic Technology, Jiamusi University, Jiamusi 154007, China

References

[1]	Irisawa T, Numata T, Toyoda E, Hirashita N, Tezuka T, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 3159
[2]	Mondal I, Dutta A K 2008 IEEE Trans. Electron Dev. 55 1682
[3]	Lin C H, Kuo J B, Su K W, Liu S 2006 Electro. Lett. 42 182
[4]	Yang N, Henson W K, Wortman J 2000 IEEE Trans. Electron Dev. 47 1634
[5]	Joshi G, Singh D N, Thangjam S 2008 IEEE Conference Arlington Texas p37
[6]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Acta Phys. Sin. 59 579 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2010 物理学报 59 579 ]
[7]	Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys.Sin. 56 5036 (in Chinese)[陈卫兵、徐静平、邹晓、李艳萍、许胜国、胡致富 2006 物理学报56 5036] 〖8] Cao Y R, Ma X H, Hao Y, Hu S G 2010 Chin. Phys. B 19 047307
[8]	Padhi R, Kothari M 2009 Int. J. Innova. Comp., Inf. Cont. 5 399
[9]	Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]
[10]	Pavel A A, Sharma A, Islam N 2008 IEEE Electron Dev. Lett. 29 1370
[11]	O’Neil A G, Antoniadis D A 1996 IEEE Trans.Electron Dev. 43 911
[12]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 物理学报58 4958 ] 〖14] Zhang W M, Fossum J G 2005 IEEE Trans.Electron Dev. 52 263
[13]	Mukhopadhyay S, Neau C, Cakici R 2003 IEEE Trans. Syst. 11 716
[14]	Cao K, Lee W C, Liu W, Liu W, Jin X, Su P, Fung S K H, An J X, Yu B, Hu C 2000 In IEDM Tech. Digest. San Francisco CA p815
[15]	Yang L F, Watling J R, Richard C W, Mirela B, Barker J R, Asen A, Scott R 2004 Semicond. Sci. Technol. 19 1174
[16]	Du G, Liu X Y, Xia Z L, Yang J F, Han R Q 2010 Chin. Phys. B 19 057304
[17]	Lin C Y, Liu C W 1997 Appl. Phy. Lett. 70 1441

Cited By

[1]	Irisawa T, Numata T, Toyoda E, Hirashita N, Tezuka T, Sugiyama N, Takagi S I 2008 IEEE Trans. Electron Dev. 55 3159
[2]	Mondal I, Dutta A K 2008 IEEE Trans. Electron Dev. 55 1682
[3]	Lin C H, Kuo J B, Su K W, Liu S 2006 Electro. Lett. 42 182
[4]	Yang N, Henson W K, Wortman J 2000 IEEE Trans. Electron Dev. 47 1634
[5]	Joshi G, Singh D N, Thangjam S 2008 IEEE Conference Arlington Texas p37
[6]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2010 Acta Phys. Sin. 59 579 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2010 物理学报 59 579 ]
[7]	Chen W B, Xu J P, Zou X, Li Y P, Xu S G, Hu Z F 2006 Acta Phys.Sin. 56 5036 (in Chinese)[陈卫兵、徐静平、邹晓、李艳萍、许胜国、胡致富 2006 物理学报56 5036] 〖8] Cao Y R, Ma X H, Hao Y, Hu S G 2010 Chin. Phys. B 19 047307
[8]	Padhi R, Kothari M 2009 Int. J. Innova. Comp., Inf. Cont. 5 399
[9]	Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese)[张志锋、张鹤鸣、胡辉勇、宣荣喜、宋建军 2009 物理学报 58 4948]
[10]	Pavel A A, Sharma A, Islam N 2008 IEEE Electron Dev. Lett. 29 1370
[11]	O’Neil A G, Antoniadis D A 1996 IEEE Trans.Electron Dev. 43 911
[12]	Song J J, Zhang H M, Hu H Y, Xuan R X, Dai X Y 2009 Acta Phys. Sin. 58 4958 (in Chinese)[宋建军、张鹤鸣、胡辉勇、宣荣喜、戴显英 2009 物理学报58 4958 ] 〖14] Zhang W M, Fossum J G 2005 IEEE Trans.Electron Dev. 52 263
[13]	Mukhopadhyay S, Neau C, Cakici R 2003 IEEE Trans. Syst. 11 716
[14]	Cao K, Lee W C, Liu W, Liu W, Jin X, Su P, Fung S K H, An J X, Yu B, Hu C 2000 In IEDM Tech. Digest. San Francisco CA p815
[15]	Yang L F, Watling J R, Richard C W, Mirela B, Barker J R, Asen A, Scott R 2004 Semicond. Sci. Technol. 19 1174
[16]	Du G, Liu X Y, Xia Z L, Yang J F, Han R Q 2010 Chin. Phys. B 19 057304
[17]	Lin C Y, Liu C W 1997 Appl. Phy. Lett. 70 1441

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