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Study of physically modeling for small-scaled strained Si nMOSFET

Qu Jiang-Tao Zhang He-Ming Qin Shan-Shan Xu Xiao-Bo Wang Xiao-Yan Hu Hui-Yong

Study of physically modeling for small-scaled strained Si nMOSFET

Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, Wang Xiao-Yan, Hu Hui-Yong
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  • In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.
    • Funds:
    [1]

    Currie M T 2004 IEEE International Conference on Integrated Circuit Design and Technology 2004 p261

    [2]

    Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys.Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]

    [3]

    Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys.Sin. 56 5052(in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 物理学报 56 5052]

    [4]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827

    [5]

    Driussi F, Esseni D, Selmi L, Hellstrom P E 2008 Solide-State Electronics 52 498

    [6]

    Hartmann J M, Abbadie A, Rouchon D, Barnes J P 2008 Thin Solid Films 516 4238

    [7]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉 勇、宣荣喜、宋建军 2009 物理学报 58 4948]

    [8]

    Gao Y, Sun L W, Yang Y, Liu J 2008 Journal of Semiconductors 29 338 (in Chinese)[高 勇、孙立伟、杨 媛、刘 静 2008 半导体学报29 338]

    [9]

    Ponomarev Y V 1997 IEDM p829

    [10]

    Lee W C, Watson B, King T J, Hu C M 1999 IEEE Electron Devices Lett. 20 232

    [11]

    King T J, McVittie J P, Saraswat K C, Pfiester J R 1994 IEEE Trans. Electron Devices 41 228

    [12]

    Kunihiro Suzuki 2000 IEEE Trans. Electron Devices 47 2372

    [13]

    Nayfeh H M, Hoyt J L, Dimitri A A 2004 IEEE Trans. Electron Devices 51 2069

    [14]

    Nayfeh H M, Hoyt J L, Dimitri A A 2004 IEEE Trans. on Electron Devices 51 2069

    [15]

    Arora ND 1989 Advanced Device Physics (New York: Academic Press Inc)

    [16]

    Price P J 1988 Jounal of Applied Physics 63 4718

    [17]

    Rim K, Hoyt J L, Gibbons J F 2000 IEEE Trans. on Electron Devices 47 1406

    [18]

    Ismail K, Nelson S F 1993 Applied Physics Letter 63 660

    [19]

    Roldán J B, Gámiz F, López V 1997 IEEE Trans. on Electron Devices 44 841

  • [1]

    Currie M T 2004 IEEE International Conference on Integrated Circuit Design and Technology 2004 p261

    [2]

    Song J J, Zhang H M, Dai X Y, Hu H Y, Xuan R X 2008 Acta Phys.Sin. 57 5918 (in Chinese) [宋建军、张鹤鸣、戴显英、胡辉勇、宣荣喜 2008 物理学报 57 5918]

    [3]

    Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan R X 2007 Acta Phys.Sin. 56 5052(in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 物理学报 56 5052]

    [4]

    Song J J, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2007 Chin.Phys. 16 3827

    [5]

    Driussi F, Esseni D, Selmi L, Hellstrom P E 2008 Solide-State Electronics 52 498

    [6]

    Hartmann J M, Abbadie A, Rouchon D, Barnes J P 2008 Thin Solid Films 516 4238

    [7]

    Zhang Z F, Zhang H M, Hu H Y, Xuan R X, Song J J 2009 Acta Phys.Sin. 58 4948 (in Chinese) [张志锋、张鹤鸣、胡辉 勇、宣荣喜、宋建军 2009 物理学报 58 4948]

    [8]

    Gao Y, Sun L W, Yang Y, Liu J 2008 Journal of Semiconductors 29 338 (in Chinese)[高 勇、孙立伟、杨 媛、刘 静 2008 半导体学报29 338]

    [9]

    Ponomarev Y V 1997 IEDM p829

    [10]

    Lee W C, Watson B, King T J, Hu C M 1999 IEEE Electron Devices Lett. 20 232

    [11]

    King T J, McVittie J P, Saraswat K C, Pfiester J R 1994 IEEE Trans. Electron Devices 41 228

    [12]

    Kunihiro Suzuki 2000 IEEE Trans. Electron Devices 47 2372

    [13]

    Nayfeh H M, Hoyt J L, Dimitri A A 2004 IEEE Trans. Electron Devices 51 2069

    [14]

    Nayfeh H M, Hoyt J L, Dimitri A A 2004 IEEE Trans. on Electron Devices 51 2069

    [15]

    Arora ND 1989 Advanced Device Physics (New York: Academic Press Inc)

    [16]

    Price P J 1988 Jounal of Applied Physics 63 4718

    [17]

    Rim K, Hoyt J L, Gibbons J F 2000 IEEE Trans. on Electron Devices 47 1406

    [18]

    Ismail K, Nelson S F 1993 Applied Physics Letter 63 660

    [19]

    Roldán J B, Gámiz F, López V 1997 IEEE Trans. on Electron Devices 44 841

  • Citation:
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Publishing process
  • Received Date:  23 August 2010
  • Accepted Date:  13 December 2010
  • Published Online:  15 September 2011

Study of physically modeling for small-scaled strained Si nMOSFET

  • 1. Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China

Abstract: In this paper, quasi-2D threshold voltage model of strained Si nMOS with polycrystalline SiGe gate is established based on the Guass Law and its I-V character model is also built based on the current density equation. The influence of relevant parameter on threshold voltage is analyzed by numerical analysis, and the validity of the model is verified by device simulator.

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