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Influence of B doping on structure and properties of Ti Thin Film

Zhang Ling He Zhi-Bing Liao Guo Chen Jia-Jun Xu Hua Li Jun

Influence of B doping on structure and properties of Ti Thin Film

Zhang Ling, He Zhi-Bing, Liao Guo, Chen Jia-Jun, Xu Hua, Li Jun
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  • B-doped Ti film is fabricated by direct current magnetron sputtering. The doping concentration, surface morphology, crystal structure, crystal grain diameter and stress are characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. It is found that, with the increase of B doping, the crystal grain diameter decreases monotonically and reaches a minimum of 1.3 nm at a B doping concentration of 5.50 at.%. The B-doped Ti film presents a compact columnar structure at that concentration. The stress of Ti film changes from compressive stress to tensile stress when B is doped.
    • Funds: Project supported by the Science and Technology on Plasma Physics Laboratory of the Research Center of Laser Fusion CAEP, China (Grant No. 9140c680501007).
    [1]

    Alemander D J, Cooley J C, Cameron B J, Dauelsberg L B, Dickerson R M, Hackenberg R E, Mauro M E, Nobile Jr A, Papin P A, Rivera G 2006 Fusion Science and Technology 49 796

    [2]

    Jankowski A F, Wall M A, van Buuren A W 2002 Acta Materialia 50 4791

    [3]

    Xu H W, Alford C S, Cooley J C, Dixon L A, Hackenberg R E, Letts S A, Moreno K A, Nikroo A, Wall J R, Youngblood K P 2007 Fusion Science and Technology 51 547

    [4]

    Nakamura T, Okimura K 2004 Vacuum 74 391

    [5]

    Cheng B X, Wu W D, He Z B, Xu H, Tang Y J, Lu T C 2006 High Power Laser and Particle Beams 18 961 (in Chinese) [程丙勋, 吴卫东, 何智兵, 许华, 唐永健, 卢铁城 2006 强激光与粒子束 18 961]

    [6]

    Duan L L, Wu W D, He Z B, Xu H, Tang Y J, Xu J C 2008 High Power Laser and Particle Beams 20 505 (in Chinese) [段玲珑, 吴卫东, 何智兵, 许华, 唐永建, 徐金城 2008 强激光与粒子束 20 505]

    [7]

    Shi L Q, Jin Q H, Liu C Z, Xu S L, Zhou Z Y 2005 Nucl. Phys. Rev. 22 148 (in Chinese) [施立群, 金钦华, 刘超卓, 徐世林, 周筑颖 2005 原子核物理评论 22 148]

    [8]

    Zhang Y, He Z B, Yan J C, Li P, Tang Y J 2011 Acta Phys. Sin. 60 6803 (in Chinese) [张颖, 何智兵, 闫建成, 李萍, 唐永建 2011 物理学报 60 6803]

    [9]

    Han H, Chen Y, Liu S F, Chen X, Lü C, Wang S L 2011 Mater. Rev. 25 81 (in Chinese) [韩辉, 陈阳, 刘生发, 陈欣, 吕程, 王硕黎 2011 材料导报 25 81]

    [10]

    Zhao Z Y 2004 X-ray and Material Structure (Hefei: Anhui University Press) pp174-178 (in Chinese) [赵宗彦 2004 X射线与物质结构 (合肥: 安徽大学出版社) 第174-178页]

    [11]

    Shao S Y, Fan Z X, Fan R Y, Shao J D 2005 Laser & Optoelectronics Progress 42 22 (in Chinese) [邵淑英, 范正修, 范瑞瑛, 邵建达 2005 激光与光电子学进展 42 22]

    [12]

    Li L X, Jia R 2010 Physical Chemistry of Silicate (Tianjin: Tianjin University Press) p212-223 (in Chinese) [李丽霞, 贾茹 2010 硅酸盐物理化学 (天津: 天津大学出版社) 第212-223页]

    [13]

    Wei J, Song X Y, Han Q C, Xu W W, Li L M 2010 Rare Metal Materials and Engineering 39 603 (in Chinese) [魏君, 宋晓艳, 韩清超, 徐文武, 李凌梅 2010 稀有金属材料与工程 39 603]

    [14]

    Barna P B, Adamik M 1998 Thin Solid Films 317 27

  • [1]

    Alemander D J, Cooley J C, Cameron B J, Dauelsberg L B, Dickerson R M, Hackenberg R E, Mauro M E, Nobile Jr A, Papin P A, Rivera G 2006 Fusion Science and Technology 49 796

    [2]

    Jankowski A F, Wall M A, van Buuren A W 2002 Acta Materialia 50 4791

    [3]

    Xu H W, Alford C S, Cooley J C, Dixon L A, Hackenberg R E, Letts S A, Moreno K A, Nikroo A, Wall J R, Youngblood K P 2007 Fusion Science and Technology 51 547

    [4]

    Nakamura T, Okimura K 2004 Vacuum 74 391

    [5]

    Cheng B X, Wu W D, He Z B, Xu H, Tang Y J, Lu T C 2006 High Power Laser and Particle Beams 18 961 (in Chinese) [程丙勋, 吴卫东, 何智兵, 许华, 唐永健, 卢铁城 2006 强激光与粒子束 18 961]

    [6]

    Duan L L, Wu W D, He Z B, Xu H, Tang Y J, Xu J C 2008 High Power Laser and Particle Beams 20 505 (in Chinese) [段玲珑, 吴卫东, 何智兵, 许华, 唐永建, 徐金城 2008 强激光与粒子束 20 505]

    [7]

    Shi L Q, Jin Q H, Liu C Z, Xu S L, Zhou Z Y 2005 Nucl. Phys. Rev. 22 148 (in Chinese) [施立群, 金钦华, 刘超卓, 徐世林, 周筑颖 2005 原子核物理评论 22 148]

    [8]

    Zhang Y, He Z B, Yan J C, Li P, Tang Y J 2011 Acta Phys. Sin. 60 6803 (in Chinese) [张颖, 何智兵, 闫建成, 李萍, 唐永建 2011 物理学报 60 6803]

    [9]

    Han H, Chen Y, Liu S F, Chen X, Lü C, Wang S L 2011 Mater. Rev. 25 81 (in Chinese) [韩辉, 陈阳, 刘生发, 陈欣, 吕程, 王硕黎 2011 材料导报 25 81]

    [10]

    Zhao Z Y 2004 X-ray and Material Structure (Hefei: Anhui University Press) pp174-178 (in Chinese) [赵宗彦 2004 X射线与物质结构 (合肥: 安徽大学出版社) 第174-178页]

    [11]

    Shao S Y, Fan Z X, Fan R Y, Shao J D 2005 Laser & Optoelectronics Progress 42 22 (in Chinese) [邵淑英, 范正修, 范瑞瑛, 邵建达 2005 激光与光电子学进展 42 22]

    [12]

    Li L X, Jia R 2010 Physical Chemistry of Silicate (Tianjin: Tianjin University Press) p212-223 (in Chinese) [李丽霞, 贾茹 2010 硅酸盐物理化学 (天津: 天津大学出版社) 第212-223页]

    [13]

    Wei J, Song X Y, Han Q C, Xu W W, Li L M 2010 Rare Metal Materials and Engineering 39 603 (in Chinese) [魏君, 宋晓艳, 韩清超, 徐文武, 李凌梅 2010 稀有金属材料与工程 39 603]

    [14]

    Barna P B, Adamik M 1998 Thin Solid Films 317 27

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  • Received Date:  20 February 2012
  • Accepted Date:  07 March 2012
  • Published Online:  20 September 2012

Influence of B doping on structure and properties of Ti Thin Film

  • 1. School of Physics and Electronic Information, China West Normal University, Nanchong 637002, China;
  • 2. Centre of Laser Fusion Research, China Academy of Engineering Physics, Mianyang 621900, China
Fund Project:  Project supported by the Science and Technology on Plasma Physics Laboratory of the Research Center of Laser Fusion CAEP, China (Grant No. 9140c680501007).

Abstract: B-doped Ti film is fabricated by direct current magnetron sputtering. The doping concentration, surface morphology, crystal structure, crystal grain diameter and stress are characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. It is found that, with the increase of B doping, the crystal grain diameter decreases monotonically and reaches a minimum of 1.3 nm at a B doping concentration of 5.50 at.%. The B-doped Ti film presents a compact columnar structure at that concentration. The stress of Ti film changes from compressive stress to tensile stress when B is doped.

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