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Influence of B doping on structure and properties of Ti Thin Film

Zhang Ling He Zhi-Bing Liao Guo Chen Jia-Jun Xu Hua Li Jun

Influence of B doping on structure and properties of Ti Thin Film

Zhang Ling, He Zhi-Bing, Liao Guo, Chen Jia-Jun, Xu Hua, Li Jun
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Publishing process
  • Received Date:  20 February 2012
  • Accepted Date:  07 March 2012
  • Published Online:  20 September 2012

Influence of B doping on structure and properties of Ti Thin Film

  • 1. School of Physics and Electronic Information, China West Normal University, Nanchong 637002, China;
  • 2. Centre of Laser Fusion Research, China Academy of Engineering Physics, Mianyang 621900, China
Fund Project:  Project supported by the Science and Technology on Plasma Physics Laboratory of the Research Center of Laser Fusion CAEP, China (Grant No. 9140c680501007).

Abstract: B-doped Ti film is fabricated by direct current magnetron sputtering. The doping concentration, surface morphology, crystal structure, crystal grain diameter and stress are characterized by X-ray photoelectron spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. It is found that, with the increase of B doping, the crystal grain diameter decreases monotonically and reaches a minimum of 1.3 nm at a B doping concentration of 5.50 at.%. The B-doped Ti film presents a compact columnar structure at that concentration. The stress of Ti film changes from compressive stress to tensile stress when B is doped.

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