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DC characteristic research based on surface potential for a-Si:H thin-film transistor

Chen Xiao-Xue Yao Ruo-He

DC characteristic research based on surface potential for a-Si:H thin-film transistor

Chen Xiao-Xue, Yao Ruo-He
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  • Received Date:  08 January 2012
  • Accepted Date:  01 July 2012
  • Published Online:  05 December 2012

DC characteristic research based on surface potential for a-Si:H thin-film transistor

  • 1. School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 61274085).

Abstract: In this paper, based on the surface potential model, taking into account both the deep and tail state distributions simultaneously, and using the simplified Fermi-Dirac function, a unified local-state model is obtained. Using the effective characteristic temperature, the unified current-voltage (I-V) model for a-Si:H thin-film transistor a-Si:H TFT is developed. This model can describes all operating regions including subthreshold region, linear area and saturated zone through a single equation. By comparison with the experimental data, it is shown that this model can accurately describe the current voltage characteristic of the a-Si:H TFT.

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