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纳米线异质结构对电子制冷机性能的影响

贺兵香 何济洲 缪贵玲

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纳米线异质结构对电子制冷机性能的影响

贺兵香, 何济洲, 缪贵玲

Influence of nanowire heterostructure on performanceof electron refrigerator

He Ji-Zhou, Miao Gui-Ling, He Bing-Xiang
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  • 研究了在具有不同温度和不同化学势的两个热库中电子通过一个三势垒纳米线异质结构进行传输的问题,利用传输矩阵法得到了电子的传输概率,进而算出了电子传输所产生的热流.通过数值计算绘出了电子制冷机的性能特征曲线.分析了偏压和异质结结构对制冷机性能的影响,重点讨论了中间势垒高度和宽度对电子传输概率、制冷率和制冷系数的影响.
    In this paper, the electron transports through a three-barrier nanowire heterostructure between two reservoirs with different temperatures and chemical potentials are studied. The transport probability of electron is obtained by using the transfer matrix method,and the heat flow carried by the electrons transfer is calculated out. The performance characteristic curves of the refrigerator are plotted by numerical calculations. The influence of bias voltage and heterostructure on the performance of the refrigerator is analyzed. Especially, the effects of the height and the width of the middle barrier on transport probability, cooling rate, and colling coefficient are emphasized.
    • 基金项目: 国家自然科学基金(批准号:10765004, 11065008)资助的课题.
    [1]

    Shakouri A, Bowers J E 1997 Appl. Phys. Lett. 71 1234

    [2]

    Mahan G D, Woods L M 1998 Phys. Rev. Lett. 80 4016

    [3]

    Mahan G D, Sofo J O, Bartkowiak M 1998 J. Appl. Phys. 83 4683

    [4]

    Humphrey T E, Newbury R, Taylor R P, Linke H 2002 Phys. Rev. Lett. 89 116801

    [5]

    Humphrey T E, Linke H 2005 Phys. Rev. Lett. 94 096601

    [6]

    Humphrey T E, Linke H, Newbury R 2001 Physica E 11 281

    [7]

    ODwyer M F, Humphrey T E, Linke H 2006 Nanotchnology 17 S338

    [8]

    ODwyer M F, Lewis R A, Zhang C 2005 Phys. Rev. B 72 205330

    [9]

    ODwyer M F, Humphrey T E, Lewis R A, Zhang C 2006 J. Phys. D:Appl. Phys. 39 4153

    [10]

    ODwyer M F, Lewis R A, Zhang C 2007 J. Phys. D:Appl. Phys. 40 1167

    [11]

    Wang X M, He J Z, Tang W 2009 Chin. Phys. B 18 984

    [12]

    He J Z, Wang X M, Liang H N 2009 Physica Scripta 80 035701

    [13]

    He J Z, He B X 2010 Acta. Phys. Sin. 59 2345 (in Chinese) [何济洲、贺兵香 2010 物理学报 59 2345]

    [14]

    He B X, He J Z 2010 Acta. Phys. Sin. 59 101 (in Chinese) [贺兵香、何济洲 2010 物理学报 59 101]

    [15]

    Poudel B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang D, Muto A, Vashaee D, Chen X, Liu J, Dresselhaus M D, Chen G, Ren Z 2008 Science 320 634

    [16]

    Hochbaum A I, Chen R, Delgado R D, Liang W, Garnett E C, Najarian M, Majumdar A, Yang P 2008 Nature 451 163

    [17]

    Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta. Phys. Sin. 57 5197 (in Chinese) [张轶群、施 毅、濮 林、张 荣、郑 有 2008 物理学报 57 5197]

    [18]

    Mu W D, Cheng H F, Chen Z H, Tang G P, Wu Z Q 2009 Acta. Phys. Sin. 58 1212 (in Chinese) [穆武第、程海峰、陈朝辉、唐耿平、吴志桥 2009 物理学报 58 1212]

    [19]

    Pichanusakorn P, Bandaru P 2010 Materials Science & Engineering R 67 19

    [20]

    Miyamoto K, Yamamoto H 1998 J. Appl. Phys. 84 311

    [21]

    Krishnamurthy S, Chen A B, Sher A 1998 J. Appl. Phys. 84 5037

  • [1]

    Shakouri A, Bowers J E 1997 Appl. Phys. Lett. 71 1234

    [2]

    Mahan G D, Woods L M 1998 Phys. Rev. Lett. 80 4016

    [3]

    Mahan G D, Sofo J O, Bartkowiak M 1998 J. Appl. Phys. 83 4683

    [4]

    Humphrey T E, Newbury R, Taylor R P, Linke H 2002 Phys. Rev. Lett. 89 116801

    [5]

    Humphrey T E, Linke H 2005 Phys. Rev. Lett. 94 096601

    [6]

    Humphrey T E, Linke H, Newbury R 2001 Physica E 11 281

    [7]

    ODwyer M F, Humphrey T E, Linke H 2006 Nanotchnology 17 S338

    [8]

    ODwyer M F, Lewis R A, Zhang C 2005 Phys. Rev. B 72 205330

    [9]

    ODwyer M F, Humphrey T E, Lewis R A, Zhang C 2006 J. Phys. D:Appl. Phys. 39 4153

    [10]

    ODwyer M F, Lewis R A, Zhang C 2007 J. Phys. D:Appl. Phys. 40 1167

    [11]

    Wang X M, He J Z, Tang W 2009 Chin. Phys. B 18 984

    [12]

    He J Z, Wang X M, Liang H N 2009 Physica Scripta 80 035701

    [13]

    He J Z, He B X 2010 Acta. Phys. Sin. 59 2345 (in Chinese) [何济洲、贺兵香 2010 物理学报 59 2345]

    [14]

    He B X, He J Z 2010 Acta. Phys. Sin. 59 101 (in Chinese) [贺兵香、何济洲 2010 物理学报 59 101]

    [15]

    Poudel B, Hao Q, Ma Y, Lan Y, Minnich A, Yu B, Yan X, Wang D, Muto A, Vashaee D, Chen X, Liu J, Dresselhaus M D, Chen G, Ren Z 2008 Science 320 634

    [16]

    Hochbaum A I, Chen R, Delgado R D, Liang W, Garnett E C, Najarian M, Majumdar A, Yang P 2008 Nature 451 163

    [17]

    Zhang Y Q, Shi Y, Pu L, Zhang R, Zheng Y D 2008 Acta. Phys. Sin. 57 5197 (in Chinese) [张轶群、施 毅、濮 林、张 荣、郑 有 2008 物理学报 57 5197]

    [18]

    Mu W D, Cheng H F, Chen Z H, Tang G P, Wu Z Q 2009 Acta. Phys. Sin. 58 1212 (in Chinese) [穆武第、程海峰、陈朝辉、唐耿平、吴志桥 2009 物理学报 58 1212]

    [19]

    Pichanusakorn P, Bandaru P 2010 Materials Science & Engineering R 67 19

    [20]

    Miyamoto K, Yamamoto H 1998 J. Appl. Phys. 84 311

    [21]

    Krishnamurthy S, Chen A B, Sher A 1998 J. Appl. Phys. 84 5037

计量
  • 文章访问数:  7146
  • PDF下载量:  736
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-05-08
  • 修回日期:  2010-07-14
  • 刊出日期:  2011-02-05

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