搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

CdSxTe1-x多晶薄膜的制备与性质研究

李 卫 冯良桓 武莉莉 蔡亚平 张静全 郑家贵 蔡 伟 黎 兵 雷 智 张冬敏

引用本文:
Citation:

CdSxTe1-x多晶薄膜的制备与性质研究

李 卫, 冯良桓, 武莉莉, 蔡亚平, 张静全, 郑家贵, 蔡 伟, 黎 兵, 雷 智, 张冬敏

Preparation and properties of polycrystalline CdSxxTe1-x1-x thin films for solar cells

Li Wei, Feng Liang-Huan, Wu Li-Li, Cai Ya-Ping, Zhang Jing-Quan, Zheng Jia-Gui, Cai Wei, Li Bing, Lei Zhi, Zhang Dong-Min
PDF
导出引用
  • 采用真空共蒸发方法制备了CdSxxTe1-x1-x多晶薄膜,并用原子 力显微镜、x射线衍射和光学透过率谱等研究了CdSxxTe1-x1-x多晶薄膜的结构 和性质.结果 表明:薄膜均匀、致密、无微孔,当x≥05时为n型半导体,xxTe1-x1-x多晶薄膜的光学能隙随x变化.结合薄膜的晶格 常数和光学能隙得到了薄膜发生相变的组分,当x<025
    The structural, optical and electrical properties of CdSxxTe1-x1-x thin films prepared by co_evaporation of powders of CdS and CdTe ha ve been studie d by x_ray diffraction, atomic force microscopy and optical transmittance spectr a measurements. Results show that the as_deposited CdSxxTe1-x1 -x thi n films are homogeneous, adherent and compact on the glass slides substrates wit hout pinhole and that their conductivity is n_type for x≥05 and p_type fo r xxTe1-x1-x thin f ilms are pol ycrystalline and show highly preferential orientation. The predominant direct op tical transitions were observed and the variation of the optical energy gap E gg is nonlinear with x. Given the values of lattice parameter and opt ical energy gap, the exact composition of the phase change at x=025 has been determined. The films are of a cubic phase for x025. After annealing there is no change in the structure of the films with a slight decrease in optical energy gap. Finally, a new structure of CdS/CdTe/Z nTe/ZnTe:Cu/Au solar cells with a CdSxxTe1-x1-x buffer l ayer has been proposed.
    • 基金项目: 国家高技术研究发展计划 (批准号:2003AA513010) 资助的课题.
计量
  • 文章访问数:  3323
  • PDF下载量:  706
  • 被引次数: 0
出版历程
  • 收稿日期:  2004-09-08
  • 修回日期:  2004-11-22
  • 刊出日期:  2005-02-05

CdSxTe1-x多晶薄膜的制备与性质研究

  • 1. 四川大学材料科学与工程学院,成都 610064
    基金项目: 

    国家高技术研究发展计划 (批准号:2003AA513010) 资助的课题.

摘要: 采用真空共蒸发方法制备了CdSxxTe1-x1-x多晶薄膜,并用原子 力显微镜、x射线衍射和光学透过率谱等研究了CdSxxTe1-x1-x多晶薄膜的结构 和性质.结果 表明:薄膜均匀、致密、无微孔,当x≥05时为n型半导体,xxTe1-x1-x多晶薄膜的光学能隙随x变化.结合薄膜的晶格 常数和光学能隙得到了薄膜发生相变的组分,当x<025

English Abstract

目录

    /

    返回文章
    返回