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Ag/ZnO bilayer thin films are fabricated on Si substrates via two-step approach of ZnO sputtering + Ag evaporation. The enhancement of the near band edge (NBE) emission of the ZnO film is realized through coupling between the surface plasmon resonating energy at Ag/ZnO interface and the photonic energy of ZnO NBE emission. The dependence of the emission enhancement ratio of ZnO on the thickness and the growth temperature T of Ag cap-layers are investigated. By evaporating Ag(8 nm) cap-layer onto ZnO(100 nm) film at high substrate temperatures (T300 ℃), the value reaches about 18,i.e., 18, which is more than twice that of Ag(8 nm)/ZnO(100 nm) bilayer films grown at low temperatures (T200 ℃). It is found that the realization of the larger can be ascribed to the bigger surface roughness of Ag/ZnO bilayer samples prepared under higher growth temperatures.
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Keywords:
- surface plasmon resonance /
- composite thin film
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[1] Ritchie R H 1957 Phys. Rev. 106 874
[2] Lal S, Link S, Halas N J 2007 Nat. Photon. 1 641
[3] [4] [5] Hao P, Wu Y H, Zhang P 2010 Acta Phys. Sin. 59 6532 (in Chinese) [郝 鹏、吴一辉、张 平 2010 物理学报 59 6532]
[6] [7] Zhang H X, Gu Y, Gong Q H 2008 Chin. Phys. B 17 2567
[8] [9] Xue W R, Guo Y N, Zhang W M 2009 Chin. Phys. B 18 2529
[10] [11] Stiles P L, Dieringer J A, Shah N C, Duyne R P V 2008 Annu. Rev. Anal. Chem. 1 601
[12] [13] Huang Q, Wang J, Cao L R, Sun J, Zhang X D, Geng W D, Xiong S Z, Zhao Y 2009 Acta Phys. Sin. 58 1980 (in Chinese) [黄 茜、王 京、曹丽冉、孙 建、张晓丹、耿卫东、熊绍珍、赵 颖 2009 物理学报 58 1980]
[14] [15] Huang Q, Zhang X D, Zhang H, Xiong S Z, Geng W D, Geng X H, Zhao Y 2010 Chin. Phys. B 19 047304
[16] Lezec H J, Thio T 2004 Opt. Express 12 3629
[17] [18] [19] Hua L, Song G F, Guo B S, Wang W M, Zhang Y 2008 Acta Phys. Sin. 57 7210 (in Chinese) [花 磊、宋国峰、郭宝山、汪卫敏、张 宇 2008 物理学报 57 7210]
[20] Wang L C, Deng L, Cui N, Niu Y P, Gong S Q 2010 Chin. Phys. B 19 017303
[21] [22] [23] Gong Z Q, Liu J Q 2010 Chin. Phys. B 19 067303
[24] Okamoto K, Niki I 2004 Nat. Mater. 3 601
[25] [26] [27] You J P, Zhang X W, Fan Y M, Yin Z G, Cai P F, Chen N F 2008 J. Phys. D 41 205101
[28] [29] Cheng P, Li D, Yuan Z, Chen P, Yang D 2008 Appl. Phys. Lett. 92 041119
[30] [31] Liu K W, Tang Y D, Cong C X, Sum T C, Huan A C H, Shen Z X, Wang L, Jiang F Y, Sun X W, Sun H D 2009 Appl. Phys. Lett. 94 151102
[32] [33] Lai C W, Ong H C 2005 Appl. Phys. Lett. 86 251105
[34] Lin H Y, Cheng C L, Chou Y Y, Huang L L, Chen Y F 2006 Opt. Express 14 2372
[35] [36] [37] Gifford D K, Hall D G 2002 Appl. Phys. Lett. 81 4315
[38] Qiu D J, Wan Z F, Cai X K, Yuan Z J, Hu L, Zhang B P, Cai C F, Wu H Z 2010 Opt. Express 18 23385
[39] [40] Barnes W L, Dereux A, Ebbesen T W 2003 Nature 424 824
[41] [42] [43] Ozgur U, Alivov Y I, Liu C, Teke A, Reshchikov M A, Dogan S, Avrutin V, Cho S J, Morkoc H 2005 J. Appl. Phys. 98 041301
[44] [45] Ebbesen T W, Lezec H J, Ghaemi H F, Thio T, Wolff P A 1998 Nature 391 667
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