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用光刺激放电法研究纳米粉末掺杂低密度聚乙烯中陷阱能级

朱智恩 张冶文 安振连 郑飞虎

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用光刺激放电法研究纳米粉末掺杂低密度聚乙烯中陷阱能级

朱智恩, 张冶文, 安振连, 郑飞虎

Trap levels in low density polyethylene doped with nanoparticles by photo-stimulated discharge

Zhu Zhi-En, Zhang Ye-Wen, An Zhen-Lian, Zheng Fei-Hu
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  • 通过光刺激放电(PSD)技术研究了纳米粉末掺杂低密度聚乙烯(LDPE)中的陷阱能级.利用连续扫描法得到了不同掺杂比例的Al2O3,MgO纳米粉末掺杂试样以及相同掺杂比例的多种纳米粉末掺杂试样的PSD电流谱,定性地得出了试样陷阱能级的深浅变化.分步扫描法定量地描述了LDPE试样在Al2O3纳米掺杂前后陷阱能量分布的变化.结果表明,掺杂比例大于0.2%的Al2O3纳米粉末掺杂、大于0.5%的MgO纳米粉末掺杂能够显著地使得LDPE陷阱能级变深.结合纳米掺杂对LDPE空间电荷注入影响的相关报道,可推测纳米掺杂对空间电荷注入的抑制与试样中陷阱能级变深存在密切的关联.
    Trap levels in nanoparticle doped low density polyethylene (LDPE) are investigated by photo-stimulated discharge (PSD). The PSD spectra in MgO/LDPE and Al2O3/LDPE nanocomposites with the different mass percentages and different nanocomposites with the same mass percentage are obtained by continuous scanning mode, which can be qualitatively estimate the trap energy distribution. The trap levels in Al2O3/LDPE nanocomposite are quantitatively described by step scanning mode. The experimental results indicate that the trap levels in Al2O3/LDPE nanocomposites with the Al2O3 content of more than 0.2% and MgO/LDPE nanocomposites with the MgO content of more than 0.5% are deeper than those of the virgin LDPE. According to the relevant reports on the effect of nanoparticle doping on space charge injection, it is considered that the suppression of space charge is probably correlated with the deeper trap levels in nanocomposites.
      通信作者: 张冶文, yewen.zhang@tongji.edu.cn
    • 基金项目: 国家自然科学基金(批准号: 51077101, 50807040)和 国家重点基础研究发展计划 (批准号: 2009CB724505)资助的课题.
      Corresponding author: Zhang Ye-Wen, yewen.zhang@tongji.edu.cn
    • Funds: Project supported by the Program of the National Natural Science Foundation of China (Grant Nos. 51077101, 50807040) and the National Basic Research Program of China (Grant No. 2009CB724505).
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    Zhang Y W, Lewiner J, Alquie C, Hampton N 1997 IEEE Trans. Dielectr. Electr. Insul. 4 778

    [2]

    Ditchi T, Alquie C, Favrie J E, Jocteur R 1989 IEEE Trans. Electr. Insul. 24 403

    [3]
    [4]

    Tanaka T 1976 IEEE Power Engineering Society Meeting 18

    [5]
    [6]
    [7]

    Pawlowski T, Fleming R J, Lang S B 2006 IEEE Trans. Electr. Insul. 13 1023

    [8]

    Murakami Y, Nemoto M, Okuzumi S, Masuda S, Nagao M, Hozumi N, Sekiguchi Y, Murata Y 2008IEEE Trans. Dielectr. Electr. Insul. 15 33

    [9]
    [10]
    [11]

    Lin Y, Du W, Tu D M, Zhong W, Du Q 2005 Polym. Int. 54 465

    [12]

    Wang X, He H Q, Tu D M, Lei C, Du Q G 2008 Trans. Electr. Insul. 15 319

    [13]
    [14]

    Chen G, Zhang C, Stevens G 2007 Annual Report Conference on Electrical Insulation and Dielectric Phenomena 275

    [15]
    [16]

    Takada T, Hayase Y, Tanaka Y 2007 Annual Report Conference on Electrical Insulation and Dielectric Phenomena 417

    [17]
    [18]
    [19]

    Maezawa T, Taima J, Hayase Y, Tanaka Y, Takada T 2007 Annual Report Conference on Electrical Insulation and Dielectric Phe-nomena 271

    [20]
    [21]

    Hao S J 2008 MS Thesis (Shanghai: Tongji University) (in Chinese) [郝淑娟 2008 硕士学位论文 (上海: 同济大学)]

    [22]

    Wang W Y, Zhang Y W, Niu F Y, Zheng F H 2009 The 9th Inter-national Conference on Properties and Applications of Dielectric Materials 3 849

    [23]
    [24]

    Kryszewski M, Ulanski J, Jeszka J K, Zielinski M 1982 Polym. Bull. 8 187

    [25]
    [26]

    Brodribb J D, Hughes D M, Lewis T J 1972 Electrets: Charge Storage and Transport in Dielectrics 177

    [27]
    [28]

    Takai Y, Mori K, Mizutani T, Ieda M 1976 Japanese Journal of Applied Physics 15 2341

    [29]
    [30]
    [31]

    Melliner A, Camacho-Gonzalez F, Gerhard-Multhaupt R 2003 Applied Physics Letters 82 254

    [32]
    [33]

    Camacho-Gonzalez F, Mellinger A, Gerhard-Multhaupt R 2004 Conference on Solid Dielectrics 218

    [34]

    Mellinger A, Singh R, Camacho-Gonzalez F 2004 Annual Report Conference on Electrical Insulation and Dielectric Phenomena 498

    [35]
    [36]
    [37]

    Zhu Z E, Zhang Y W, An Z L, Zheng F H 2010 Acta Phys. Sin. 59 665 (in Chinese) [朱智恩, 张冶文, 安振连, 郑飞虎 2010 物理学报 59 665]

    [38]

    Lewis T J 2005 J. Phys. D: Appl. Phys. 38 202

    [39]
    [40]

    An Z L, Yang Q, Xie C, Jiang Y, Zheng F H, Zhang Y W 2009 Journal of Applied Physics 105 064102

    [41]
    [42]
    [43]

    An Z L, Xie C, Jiang Y, Zheng F H, Zhang Y W 2009 Journal of Applied Physics 106 104112

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出版历程
  • 收稿日期:  2011-07-13
  • 修回日期:  2011-08-01
  • 刊出日期:  2012-03-05

用光刺激放电法研究纳米粉末掺杂低密度聚乙烯中陷阱能级

  • 1. 同济大学物理系, 先进微结构材料教育部重点实验室, 上海 200092
  • 通信作者: 张冶文, yewen.zhang@tongji.edu.cn
    基金项目: 国家自然科学基金(批准号: 51077101, 50807040)和 国家重点基础研究发展计划 (批准号: 2009CB724505)资助的课题.

摘要: 通过光刺激放电(PSD)技术研究了纳米粉末掺杂低密度聚乙烯(LDPE)中的陷阱能级.利用连续扫描法得到了不同掺杂比例的Al2O3,MgO纳米粉末掺杂试样以及相同掺杂比例的多种纳米粉末掺杂试样的PSD电流谱,定性地得出了试样陷阱能级的深浅变化.分步扫描法定量地描述了LDPE试样在Al2O3纳米掺杂前后陷阱能量分布的变化.结果表明,掺杂比例大于0.2%的Al2O3纳米粉末掺杂、大于0.5%的MgO纳米粉末掺杂能够显著地使得LDPE陷阱能级变深.结合纳米掺杂对LDPE空间电荷注入影响的相关报道,可推测纳米掺杂对空间电荷注入的抑制与试样中陷阱能级变深存在密切的关联.

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