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采用化学共沉淀法制备了不同Ba2+掺杂浓度、 不同煅烧温度的Sr0.8-xBaxEu0.2WO4红色荧光粉. 研究了样品的晶体取向和晶格 畸变对发光性质的影响, 实验结果表明: 合成的Sr0.8-xBaxEu0.2WO4红色荧光粉为四方相, 样品中Eu3+的5D07F2跃迁的红光能被近紫外光和蓝光有效激发. 适量的Ba2+离子取代部分的Sr2+提高了Sr0.8Eu0.2WO4荧光粉的发光强度, Ba2+掺杂浓度的改变对基质的晶格参数、晶体对称性和发光性能影响较大, Ba2+的最佳掺杂量为30%.
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关键词:
- 白光发光二极管 /
- 共沉淀法 /
- Sr0.8-xBaxEu0.2WO4 /
- 光致发光
Sr0.8-xBaxEu0.2WO4 red phosphors with different Ba2+ doping concentrations is prepared by the co-precipitation method at different sintering temperatures. We study the influences of the crystal orientation and lattice distortion of the samples on the luminescence property. The results show that the Sr0.8-xBaxEu0.2WO4 synthesized by the process has a phase with tetragonal structure and that the red emission 5D0-7F2 of Eu3+ in the sample can be excited effectively by the near-UV light and blue light. The part of Sr2+ replaced with Ba2+ leads to the increase in emission intensity of Sr0.8-xBaxEu0.2WO4. The doping concentration of Ba2+ has a great influence on the crystal parameter, the crystal symmetry and the luminescent property. The optimized doping concentration of Ba2+ is found to be 30%.-
Keywords:
- white LED /
- co-precipitation method /
- Sr0.8-xBaxEu0.2WO4 /
- photoluminescence
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[7] Yi L H, Zhou L Y, Gong F Z, Lan Y W, Tong Z F, Sun J H 2010 Mater. Sci. Eng. B 172 132
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[13] Li Y Q, With G D, Hintzen H T 2008 J. Solid State Chem. 181 515
[14] Wang Z L, Liang H B, wang J, Gong M L, Su Q 2006 Appl. Phys. Lett. 89 071921
[15] Zeng Q H, Liang H B, Gong M L, Su Q 2008 J. Eletrochem. Soc. 155 730
[16] Tang A, Zhang D F, Yang L 2012 Journal of Luminescence 132 1489
[17] Barros B S, Lima A C de, Silva Z R da, Melo D M A, Alves Jr S 2012 J. Alloys Compd. 73 635
[18] Tang H X, Lü S C 2011 Acta Phys. Sin. 60 037805 (in Chinese) [唐红霞, 吕树臣 2011 物理学报 60 037805]
[19] Ren Y D, Lü S C 2011 Acta Phys. Sin. 60 087804 (in Chinese) [任艳东, 吕树臣 2011 物理学报 60 087804]
[20] Zhang Q, Meng Q Y 2012 Acta Phys. Sin. 61 107804 (in Chinese) [张庆, 孟庆裕 2012 物理学报 61 107804
[21] Gao Z C, Lee B I, Samuals W D 1998 J. Appl. Phys. 83 2222
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[1] Smet P F, Korthout K, van Haecke J E, Poelman D 2007 Mater. Sci. Eng. B 146 264
[2] Haque M M, Lee H I, Kim D K 2009 J. Alloys Compd. 481 792
[3] Song Y H, Jia G, Yang M, Huang Y J, You H P, Zhang H J 2009 Appl. Phys. Lett. 94 091902
[4] Kwon K H, Im W B, Jang H S, Yoo H S, Jeon D Y 2009 Inorg. Chem. 48 11525
[5] Liu L H, Xie R J, Hirosaki N, Li Y Q, Takeda T, Zhang C N, Li J G, Sun X D 2010 J. Am. Ceram. Soc. 93 2018
[6] Chen Y, Wang J, Zhang X G, Zhang G G, Gong M L, Su Q 2010 Sens. Actuators B 148 259
[7] Yi L H, Zhou L Y, Gong F Z, Lan Y W, Tong Z F, Sun J H 2010 Mater. Sci. Eng. B 172 132
[8] Kojima Y, Kamei S, Nishimiya N 2010 Mater. Res. Bull. 45 121
[9] Xie R J, Hirosaki N, Li Y Q, Takeda T 2010 J. Lumin. 130 266
[10] Ju Z H, Wei R P, Ma J X, Pang C R, Liu W S 2010 J. Alloys Compd. 507 133
[11] Nakamura S, Fasol G 1997 The Blue Laser Diodes: GaN Based Blue Light Emitters and Lasers (Berlin: springer Press) p216
[12] Guo C F, Huang D X, Su Q 2006 Mater. Sci. Eng. B 130 189
[13] Li Y Q, With G D, Hintzen H T 2008 J. Solid State Chem. 181 515
[14] Wang Z L, Liang H B, wang J, Gong M L, Su Q 2006 Appl. Phys. Lett. 89 071921
[15] Zeng Q H, Liang H B, Gong M L, Su Q 2008 J. Eletrochem. Soc. 155 730
[16] Tang A, Zhang D F, Yang L 2012 Journal of Luminescence 132 1489
[17] Barros B S, Lima A C de, Silva Z R da, Melo D M A, Alves Jr S 2012 J. Alloys Compd. 73 635
[18] Tang H X, Lü S C 2011 Acta Phys. Sin. 60 037805 (in Chinese) [唐红霞, 吕树臣 2011 物理学报 60 037805]
[19] Ren Y D, Lü S C 2011 Acta Phys. Sin. 60 087804 (in Chinese) [任艳东, 吕树臣 2011 物理学报 60 087804]
[20] Zhang Q, Meng Q Y 2012 Acta Phys. Sin. 61 107804 (in Chinese) [张庆, 孟庆裕 2012 物理学报 61 107804
[21] Gao Z C, Lee B I, Samuals W D 1998 J. Appl. Phys. 83 2222
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