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Vanadium oxide films are prepared by Sol-Gel at different annealing temperatures. Their surface morphologies, valence states, electrical and optical properties are characterized by SEM, XRD, resistance meter, UV-Vis spectrometer and FTIR, respectively. Results reveal that the optimal temperature for producing V2O5 films by Sol-gel is 430 ℃, the organics in the films cannot be decomposed completely below 430 ℃ while the V-O bonds will be broken under a higher temperature (>430 ℃). The as-prepared vanadium pentoxide films exhibit higher TCR and larger light absorption, so that they are suitable to be used as bolometric materials for uncooled infrared detectors. The growth mechanism of vanadium oxide film prepared by Sol-Gel is also presented in this paper.
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Keywords:
- vanadium oxide films /
- Sol-Gel /
- optoelectonic properties /
- growth mechanism
[1] Partlow D P, Grukovich S R, Radford K C, Denes L J 1991 J. Appl. Phys. 70 443
[2] Dislich H, Hussmann E 1981 Thin Solid Films 77 129
[3] Cole B, Horning R, Johnson B, Nguyen K, Kruse P W, Foote M C 1994 IEEE International Symposium on Applications of Ferroelectrics, University Park, Aug 7-10, 1994 p653
[4] Jerominek H, Pope T D, Alain C, Zhang R, Lehoux M, Pocard F, Fuchs R W, Grenier G, Rouleau Y, Cayer F, Savard S, Bilodeau G, Couillard J F, Larouche C 1998 Proc. SPIE. 3436 585
[5] Pope T D, Jerominek H, Alain C, Cayer F, Tremblay B, Grenier C, Topart P A, Clair S L, Picard F, Larouche C, Boulanger B, Martel A, Desroches Y 2002 Proc. SPIE 4721 64
[6] Dem'yanenko M A, Fomin B I, Ovsyuk V N, Marchishin I V, Parm I O, Vasil'ieva L L, Shashkin V V 2005 Proc. SPIE 5957 59571R
[7] Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 0852 (in Chinese) [袁宁一, 李金华, 林成鲁 2002 物理学报 51 0852]
[8] She S F, WU G M, Yang H Y, Shen J, Gao G H 2010 Proc. SPIE 7995 79950S
[9] Pan M X, Cao X Z, Li Y X, Wang B Y, Xue D S, Ma C X, Zhou C L, Wei L 2004 Acta Phys. Sin. 53 1956 (in Chinese) [潘梦霄, 曹兴忠, 李养贤, 王宝义, 薛德胜, 马创新, 周春兰, 魏龙 2004 物理学报 53 1956]
[10] Wang L X, Li J P, He X L, Gao X G 2006 Acta Phys. Sin. 55 2847 (in Chinese) [王利霞, 李建平, 何秀丽, 高晓光 2006 物理学报 55 2874]
[11] 唐伟忠 2007 薄膜材料制备原理、技术及应用 第二版(北京: 冶金工业出版社)第174页
[12] Nagase K, Shimizu Y, Muira N, Yamazoe N 1992 Appl. Phys. Lett. 60 802
[13] Zou C W, Yan X D, Chen R Q, Wu Z Y, Alyamani A, Gao W 2011 Appl. Phys. Lett. 98 111904
[14] Tahar R B H, Ban T, Ohya Y, Takahashi Y 1997 J. Appl. Phys. 82 865
[15] Kulkarni A K, Sctulz K H, Lim T S 1999 Thin solid films 345 273
[16] Katzke H, Toledano P, Depmeier W 2003 Phys. Rev. B 68 024109
[17] Haverkort M W, Hu Z, Tanaka A, Reichelt W, Streltsov S V, Korotin M A, Anisimov V I, Hsieh H H, Lin H J, Chen C T, Khomskii D I, Tjeng L H 2005 Phys. Rev. Lett. 95 196404
[18] Jerominek H, Picard F, Vincent D 1993 Opt. Eng. 32 2092
[19] HanY H, Choi I H, Kang H K, Park J Y, Kim K T, Shin H J, Moon S 2003 Thin Solid Films 425 260
[20] Bahgat A, Al-Hajry A, El-Desoky M M 2006 Phys. Solid State 203 1999
[21] Arora A K, Sato T, Okada T, Yagi T 2012 Phys. Rev. B 85 094113
[22] Lee S H, Cheong H M, Seong M J, Liu P, Tracy C E, Mascarenhas A, Pitts J R, Deb S K 2002 J. Appl. Phys. 92 1893
[23] Luo Z F, Wu Z M, Xu X D, Wang T, Jiang Y D 2011 Acta Phys. Sin. 60 067302 (in Chinese) [罗振飞, 吴志明, 许向东, 王涛, 蒋亚东 2011 物理学报 60 06732]
[24] Benmoussa M, Ibnouelghazi E, Bennouna A, Ameziane E L 1995 Thin Solid Films 265 22
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[1] Partlow D P, Grukovich S R, Radford K C, Denes L J 1991 J. Appl. Phys. 70 443
[2] Dislich H, Hussmann E 1981 Thin Solid Films 77 129
[3] Cole B, Horning R, Johnson B, Nguyen K, Kruse P W, Foote M C 1994 IEEE International Symposium on Applications of Ferroelectrics, University Park, Aug 7-10, 1994 p653
[4] Jerominek H, Pope T D, Alain C, Zhang R, Lehoux M, Pocard F, Fuchs R W, Grenier G, Rouleau Y, Cayer F, Savard S, Bilodeau G, Couillard J F, Larouche C 1998 Proc. SPIE. 3436 585
[5] Pope T D, Jerominek H, Alain C, Cayer F, Tremblay B, Grenier C, Topart P A, Clair S L, Picard F, Larouche C, Boulanger B, Martel A, Desroches Y 2002 Proc. SPIE 4721 64
[6] Dem'yanenko M A, Fomin B I, Ovsyuk V N, Marchishin I V, Parm I O, Vasil'ieva L L, Shashkin V V 2005 Proc. SPIE 5957 59571R
[7] Yuan N Y, Li J H, Lin C L 2002 Acta Phys. Sin. 51 0852 (in Chinese) [袁宁一, 李金华, 林成鲁 2002 物理学报 51 0852]
[8] She S F, WU G M, Yang H Y, Shen J, Gao G H 2010 Proc. SPIE 7995 79950S
[9] Pan M X, Cao X Z, Li Y X, Wang B Y, Xue D S, Ma C X, Zhou C L, Wei L 2004 Acta Phys. Sin. 53 1956 (in Chinese) [潘梦霄, 曹兴忠, 李养贤, 王宝义, 薛德胜, 马创新, 周春兰, 魏龙 2004 物理学报 53 1956]
[10] Wang L X, Li J P, He X L, Gao X G 2006 Acta Phys. Sin. 55 2847 (in Chinese) [王利霞, 李建平, 何秀丽, 高晓光 2006 物理学报 55 2874]
[11] 唐伟忠 2007 薄膜材料制备原理、技术及应用 第二版(北京: 冶金工业出版社)第174页
[12] Nagase K, Shimizu Y, Muira N, Yamazoe N 1992 Appl. Phys. Lett. 60 802
[13] Zou C W, Yan X D, Chen R Q, Wu Z Y, Alyamani A, Gao W 2011 Appl. Phys. Lett. 98 111904
[14] Tahar R B H, Ban T, Ohya Y, Takahashi Y 1997 J. Appl. Phys. 82 865
[15] Kulkarni A K, Sctulz K H, Lim T S 1999 Thin solid films 345 273
[16] Katzke H, Toledano P, Depmeier W 2003 Phys. Rev. B 68 024109
[17] Haverkort M W, Hu Z, Tanaka A, Reichelt W, Streltsov S V, Korotin M A, Anisimov V I, Hsieh H H, Lin H J, Chen C T, Khomskii D I, Tjeng L H 2005 Phys. Rev. Lett. 95 196404
[18] Jerominek H, Picard F, Vincent D 1993 Opt. Eng. 32 2092
[19] HanY H, Choi I H, Kang H K, Park J Y, Kim K T, Shin H J, Moon S 2003 Thin Solid Films 425 260
[20] Bahgat A, Al-Hajry A, El-Desoky M M 2006 Phys. Solid State 203 1999
[21] Arora A K, Sato T, Okada T, Yagi T 2012 Phys. Rev. B 85 094113
[22] Lee S H, Cheong H M, Seong M J, Liu P, Tracy C E, Mascarenhas A, Pitts J R, Deb S K 2002 J. Appl. Phys. 92 1893
[23] Luo Z F, Wu Z M, Xu X D, Wang T, Jiang Y D 2011 Acta Phys. Sin. 60 067302 (in Chinese) [罗振飞, 吴志明, 许向东, 王涛, 蒋亚东 2011 物理学报 60 06732]
[24] Benmoussa M, Ibnouelghazi E, Bennouna A, Ameziane E L 1995 Thin Solid Films 265 22
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