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利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

蔡春锋 张兵坡 黎瑞锋 徐天宁 毕岗 吴惠桢 张文华 朱俊发

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利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

蔡春锋, 张兵坡, 黎瑞锋, 徐天宁, 毕岗, 吴惠桢, 张文华, 朱俊发

Band offsets of ZnO/PbTe heterostructure determined by synchrotron radiation photoelectron spectroscopy

Cai Chun-Feng, Zhang Bing-Po, Li Rui-Feng, Xu Tian-Ning, Bi Gang, Wu Hui-Zhen, Zhang Wen-Hua, Zhu Jun-Fa
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  • 异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用. 利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶. 测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I 的能带排列. 利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb–O键(低结合能) 和Pb–Te键(高结合能). 在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中. 该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.
    Accurate determination of the band offsets of a heterostructure is essential to its study and application. In this paper, we use synchrotron radiation photoelectron spectroscopy to determine the band offset of ZnO/PbTe heterostructure. The valence band offset is 2.56 eV, and the conduction band offset is 0.49 eV, which indicates that the heterostructure has a type-I band alignment. By performing the depth scanning measurement, we find there are two bonding structures at the interface of ZnO/PbTe heterostructure, corresponding to Pb-O bonding (low energy side) and Pb-Te bonding (high energy side). At the interface of ZnO/PbTe heterostructure, the conduction band offset is much smaller than the valence band offset which is conducive to the transportation of excited electrons in PbTe source layer to ZnO electrode. Due to the unique band structure the ZnO/PbTe heterostructure has potential applications in the fabrication of high efficiency solar cells, mid infrared detectors and lasers.
    • 基金项目: 国家自然科学基金(批准号:61275108,11374259)资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61275108, 11374259).
    [1]

    Levin E M, Heremans J P, Kanatzidis M G, Schmidt-Rohr K 2013 Phys. Rev. B 88 115211

    [2]

    Wu H F, Zhang H J, Liao Q, Lu Y H, Si J X, Li H Y, Bao S N, Wu H Z, He P M 2009 Acta Phys. Sin. 58 1310 (in Chinese) [吴海飞, 张寒洁, 廖清, 陆赟豪, 斯剑霄, 李海洋, 鲍世宁, 吴惠祯, 何丕模 2009 物理学报 58 1310]

    [3]

    Xu T N, Wu H Z, Sui C H 2008 Acta Phys. Sin. 57 7865 (in Chinese) [徐天宁, 吴惠桢, 隋成华 2008 物理学报 57 7865]

    [4]

    Jin S Q, Cai C F, Bi G, Zhang B P, Wu H Z, Zhang Y 2013 Phys. Rev. B 87 235315

    [5]

    Ishida A, SugiyamaY, Isaji Y, Kodama K, Takano Y, Sakata H, Rahim M, Khiar A, Fill M, Felder F, Zogg H 2011 Appl. Phys. Lett. 99 121109

    [6]

    Lin Z H, Wang M Q, Zhang L Y, Xue Y H, Yao X, Cheng H W, Bai J T 2012 J. Mater. Chem. 22 9082

    [7]

    Wei X D, Cai C F, Zhang B P, Hu L, Wu H Z, Zhang Y G, Feng J W, Lin J M, Lin C, Fang W Z, Dai N 2011 J. Infrared Millim. Waves 30 293 (in Chinese) [魏晓东, 蔡春锋, 张兵坡, 胡炼, 吴惠桢, 张永刚, 冯靖文, 林加木, 林春, 方维政, 戴宁 2011 红外与毫米波学报 30 293]

    [8]

    Kolwas K A, Grabecki G, Trushkin S, Wrobel J, Aleszkiewicz M, Cywinski L, Dietl T, Springholz G, Bauer G 2013 Phys. Status Solidi B 250 37

    [9]

    Fu H Y, Tsang S W 2012 Nanoscale 4 2187

    [10]

    Cai C F, Wu H Z, Si J X, Sun Y, Dai N 2009 Acta Phys. Sin. 58 3560 (in Chinese) [蔡春锋, 吴惠桢, 斯剑霄, 孙艳, 戴宁 2009 物理学报 58 3560]

    [11]

    Rahim M, Khiar A, Felder F, Fill M, Zogg H, Sigrist M W 2010 Appl. Phys. B 100 261

    [12]

    Hou Q Y, Liu Q L, Zhao C W, Zhao E J 2014 Acta Phys. Sin. 63 057101 (in Chinese) [侯清玉, 刘全龙, 赵春旺, 赵二俊 2014 物理学报 63 057101]

    [13]

    Cho Y S, Kang J W, Kim B H, Park S J 2013 Opt. Express 21 31560

    [14]

    Santos J D, Fernandez S, Carabe J, Gandia J J 2014 Thin Solid Films 551 207

    [15]

    He J F, Zheng S K, Zhou P L, Shi R Q, Yan X B 2014 Acta Phys. Sin. 63 046301 (in Chinese) [何静芳, 郑树凯, 周鹏力, 史茹倩, 闫小兵 2014 物理学报 63 046301]

    [16]

    Zhitomirsky D, Furukawa M, Tang J, Stadler P, Hoogland S, Voznyy O, Liu H, Sargent E H 2012 Adv. Mater. 24 6181

    [17]

    Choi J J, Lim Y F, Santiago-Berrios M B, Oh M, Hyun B R, Sun L F, Bartnik A C, Goedhart A, Malliaras G G, Abruña H D, Wise F W, Hanrath T 2009 Nano Lett. 9 3749

    [18]

    Timp B A, Zhu X Y 2010 Surface Sci. 604 1335

    [19]

    Li L, Qiu J J, Weng B B, Yuan Z J, Li X M, Gan X Y, Sellers I R, Shi Z S 2012 Appl. Phys. Lett. 101 261601

    [20]

    Cai C F, Zhang B P, Li R F, Wu H Z, Xu T N, Zhang W H, Zhu J F 2012 Europhys. Lett. 99 37010

    [21]

    Zou C, Sun B, Zhang W, Wang G, Xu P, Wang P Q, Xu F, Pan H 2005 Nucl. Instrum. Meth. A 548 574

    [22]

    Kraut E A, Grant R W, Waldrop J R, Kowalczyk S P 1980 Phys. Rev. Lett. 44 1620

    [23]

    Cai C F, Wu H Z, Si J X, Jin S Q, Zhang W H, Xu Y, Zhu J F 2010 Chin. Phys. B 19 077301

    [24]

    Cai C F, Wu H Z, Si J X, Zhang W H, Xu Y, Zhu J F 2010 Appl.Surf.Sci. 256 6057

    [25]

    Si J X, Jin S Q, Zhang H J, Zhu P, Qiu D J, Wu H Z 2008 Appl. Phys. Lett. 93 202101

    [26]

    McFeely F R, Kowalczyk S, Ley L, Pollak R A, Shirley D A 1973 Phys. Rev. B 7 5228

    [27]

    Chen Q, Yang M, Feng Y P, Chai J W, Zhang Z, Pan J S, Wang S J 2009 Appl. Phys. Lett. 95 162104

  • [1]

    Levin E M, Heremans J P, Kanatzidis M G, Schmidt-Rohr K 2013 Phys. Rev. B 88 115211

    [2]

    Wu H F, Zhang H J, Liao Q, Lu Y H, Si J X, Li H Y, Bao S N, Wu H Z, He P M 2009 Acta Phys. Sin. 58 1310 (in Chinese) [吴海飞, 张寒洁, 廖清, 陆赟豪, 斯剑霄, 李海洋, 鲍世宁, 吴惠祯, 何丕模 2009 物理学报 58 1310]

    [3]

    Xu T N, Wu H Z, Sui C H 2008 Acta Phys. Sin. 57 7865 (in Chinese) [徐天宁, 吴惠桢, 隋成华 2008 物理学报 57 7865]

    [4]

    Jin S Q, Cai C F, Bi G, Zhang B P, Wu H Z, Zhang Y 2013 Phys. Rev. B 87 235315

    [5]

    Ishida A, SugiyamaY, Isaji Y, Kodama K, Takano Y, Sakata H, Rahim M, Khiar A, Fill M, Felder F, Zogg H 2011 Appl. Phys. Lett. 99 121109

    [6]

    Lin Z H, Wang M Q, Zhang L Y, Xue Y H, Yao X, Cheng H W, Bai J T 2012 J. Mater. Chem. 22 9082

    [7]

    Wei X D, Cai C F, Zhang B P, Hu L, Wu H Z, Zhang Y G, Feng J W, Lin J M, Lin C, Fang W Z, Dai N 2011 J. Infrared Millim. Waves 30 293 (in Chinese) [魏晓东, 蔡春锋, 张兵坡, 胡炼, 吴惠桢, 张永刚, 冯靖文, 林加木, 林春, 方维政, 戴宁 2011 红外与毫米波学报 30 293]

    [8]

    Kolwas K A, Grabecki G, Trushkin S, Wrobel J, Aleszkiewicz M, Cywinski L, Dietl T, Springholz G, Bauer G 2013 Phys. Status Solidi B 250 37

    [9]

    Fu H Y, Tsang S W 2012 Nanoscale 4 2187

    [10]

    Cai C F, Wu H Z, Si J X, Sun Y, Dai N 2009 Acta Phys. Sin. 58 3560 (in Chinese) [蔡春锋, 吴惠桢, 斯剑霄, 孙艳, 戴宁 2009 物理学报 58 3560]

    [11]

    Rahim M, Khiar A, Felder F, Fill M, Zogg H, Sigrist M W 2010 Appl. Phys. B 100 261

    [12]

    Hou Q Y, Liu Q L, Zhao C W, Zhao E J 2014 Acta Phys. Sin. 63 057101 (in Chinese) [侯清玉, 刘全龙, 赵春旺, 赵二俊 2014 物理学报 63 057101]

    [13]

    Cho Y S, Kang J W, Kim B H, Park S J 2013 Opt. Express 21 31560

    [14]

    Santos J D, Fernandez S, Carabe J, Gandia J J 2014 Thin Solid Films 551 207

    [15]

    He J F, Zheng S K, Zhou P L, Shi R Q, Yan X B 2014 Acta Phys. Sin. 63 046301 (in Chinese) [何静芳, 郑树凯, 周鹏力, 史茹倩, 闫小兵 2014 物理学报 63 046301]

    [16]

    Zhitomirsky D, Furukawa M, Tang J, Stadler P, Hoogland S, Voznyy O, Liu H, Sargent E H 2012 Adv. Mater. 24 6181

    [17]

    Choi J J, Lim Y F, Santiago-Berrios M B, Oh M, Hyun B R, Sun L F, Bartnik A C, Goedhart A, Malliaras G G, Abruña H D, Wise F W, Hanrath T 2009 Nano Lett. 9 3749

    [18]

    Timp B A, Zhu X Y 2010 Surface Sci. 604 1335

    [19]

    Li L, Qiu J J, Weng B B, Yuan Z J, Li X M, Gan X Y, Sellers I R, Shi Z S 2012 Appl. Phys. Lett. 101 261601

    [20]

    Cai C F, Zhang B P, Li R F, Wu H Z, Xu T N, Zhang W H, Zhu J F 2012 Europhys. Lett. 99 37010

    [21]

    Zou C, Sun B, Zhang W, Wang G, Xu P, Wang P Q, Xu F, Pan H 2005 Nucl. Instrum. Meth. A 548 574

    [22]

    Kraut E A, Grant R W, Waldrop J R, Kowalczyk S P 1980 Phys. Rev. Lett. 44 1620

    [23]

    Cai C F, Wu H Z, Si J X, Jin S Q, Zhang W H, Xu Y, Zhu J F 2010 Chin. Phys. B 19 077301

    [24]

    Cai C F, Wu H Z, Si J X, Zhang W H, Xu Y, Zhu J F 2010 Appl.Surf.Sci. 256 6057

    [25]

    Si J X, Jin S Q, Zhang H J, Zhu P, Qiu D J, Wu H Z 2008 Appl. Phys. Lett. 93 202101

    [26]

    McFeely F R, Kowalczyk S, Ley L, Pollak R A, Shirley D A 1973 Phys. Rev. B 7 5228

    [27]

    Chen Q, Yang M, Feng Y P, Chai J W, Zhang Z, Pan J S, Wang S J 2009 Appl. Phys. Lett. 95 162104

计量
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  • PDF下载量:  763
  • 被引次数: 0
出版历程
  • 收稿日期:  2014-03-11
  • 修回日期:  2014-04-15
  • 刊出日期:  2014-08-05

利用同步辐射光电子能谱技术测量ZnO/PbTe异质结的能带带阶

  • 1. 浙江大学城市学院信息与电气工程学院, 杭州 310015;
  • 2. 浙江大学物理系, 杭州 310058;
  • 3. 浙江工业大学之江学院理学系, 杭州 310024;
  • 4. 中国科学技术大学国家同步辐射实验室, 合肥 230029
    基金项目: 国家自然科学基金(批准号:61275108,11374259)资助的课题.

摘要: 异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用. 利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶. 测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I 的能带排列. 利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb–O键(低结合能) 和Pb–Te键(高结合能). 在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中. 该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.

English Abstract

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