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利用X射线光电子能谱（XPS），同步辐射紫外光电子能谱（SRUPS），近边X射线吸收精细结构（NEXAFS）以及原子力显微镜（AFM）等技术研究了苝四甲酸二酐（PTCDA）与Au（111）的界面电子结构、PTCDA分子取向及有机薄膜的表面形貌. SRUPS价带谱显示，伴随PTCDA分子的微量沉积（05 ML），位于费米能级附近Au的表面电子态迅速消失，但却观察不到明显的界面杂化态，这说明PTCDA分子和Au（111）界面间存在弱电子传输过程，但并没有发生明显的化学反应. 角分辨NEXAFS以及SRUPS
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关键词:
- 同步辐射光电子能谱 /
- 近边X射线吸收精细结构 /
- 界面结构 /
- 分子取向
The interface electronic structure, molecular orientation and surface morphology of the organic semiconductor 3,4,9,10-perylene tetracarboxylic dianhydride （PTCDA） grown on Au （111） surface have been studied by means of X-ray photoelectron spectroscopy （XPS）, synchrotron radiation ultraviolet photoelectron spectroscopy （SRUPS）, near edge X-ray absorption fine structure spectroscopy （NEXAFS） and atomic force microscopy （AFM）. It can be seen from the SRUPS results that the Shockley-type Au （111） surface state near the Fermi level extinguishes immediately after sub-monolayer of PTCDA is deposited onto the Au surface without the emergence of interface hybrid state. This indicates that a charge transfer process takes place at the interface between PTCDA molecule and Au（111）, but does not lead to strong chemical reaction. Angle dependent NEXAFS and SRUPS show that the PTCDA overlayers are ordered and the molecules lie flatly on the Au（111） surface. According to the AFM images and the evolution of Au 4f7/2 and C 1s integral intensities with increasing film thickness, the typical Stranski- Krastanov growth mode is proposed for PTCDA deposition on Au（111） surface, that is, layer by layer growth followed by island growth mode. The Dewetting transition occurs between the 2D and 3D growth modes.-
Keywords:
- synchrotron radiation photoelectron spectroscopy /
- near edge X-ray adsorption fine structure spectroscopy （NEXAFS） /
- interface structure /
- molecular orientation
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[12] ］Zhang W H, Mo X, Wang G D, Wang L W, Xu F Q, Pan H B, Shi M M, Chen H Z, Wang M 2007 Acta Phys. Sin. 56 4936 （in Chinese）［张文华、莫雄、王国栋、王立武、徐法强、潘海斌、施敏敏、陈红征、汪茫2007 物理学报 56 4936］
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[16] ］Nicoara N, Roman E, Gomez-Rodriguez J M, Martin-Gago J A, Mendez J 2006 Org. Electr. 7 287
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[18] ］Luth H 1995 Surfaces and Interfaces of Solid Materials （Berlin: Springer） p114
[19] ］Fenter P, Burrows P E, Eisenberger P, Forrest S R 1995 J. Crystal Growth 152 65
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[22] ］Taborski J, Vaterlein P, Dietz H, Zimmermann U, Umbach E 1995 Journal of Electron Spectroscopy and Related Phenomena 75 129
[23] ］Zou Y, Kilian L, Scholl A, Schmidt T, Fink R, Umbach E 2006 Surf. Sci. 600 1240.
[24] ］Fenter P, Schreiber F, Zhou L, Eisenberger P, Forrest S R 1997 Phys. Rev. B 56 3046
[25] ］Gustafsson J B, Moons E, Widstrand S M, Johansson L S O 2004 Surf. Sci. 572 23
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[1] ［1］Mathine D L, Woo H S, He W, Kim T W, Kippelen B, Peyghambarian N 2000 Appl. Phys. Lett. 76 3849
[2] ［2］Forrest S R 1997 Chem. Rev. 97 1793
[3] ［3］Peisert H, Schwieger T, Auerhammer J M, Knupfer M, Golden M S, Fink J, Bressler P R, Mast M 2001 J. Appl. Phys. 90 466
[4] ［4］Salaneck W R, Seki K, Kahn A, Pireaux J J 2001 Conjugated polymer and molecular interfaces （New York: Springer） p156, 242
[5] ［5］Ishii H, Sugiyama K, Ito E, Seki K 1999 Adv. Mater. 11 605
[6] ［6］Temirov R, Soubatch S, Luican A , Tautz F S 2006 Nature 444 350
[7] ［7］Hirose Y, Kahn A, Aristov V, Soukiassian P, Bulovic V, Rorrest S R 1996 Phys. Rev. B 54 13748
[8] ［8］Hirose Y, Chen W, Haskal E I, Forrest S R, Kahn A 1994 Appl. Phys. Lett. 64 3482
[9] ［9］Eremtchenko M, Schaefer J A, Tautz F S 2004 Nature 425 602
[10] ］Chen W, Huang H, Chen S, Chen L, Zhang H L, Gao X Y, Wee A T S 2007 Appl. Phys. Lett. 91 114102
[11] ］Zou C W, Sun B, Wang G D, Zhang W H, Xu P S, Xu F Q, Pan H B 2005 Nucl. Techn. 28 895 （in Chinese）［邹祟文、孙柏、王国栋、张文华、徐彭寿、徐法强、潘海斌 2005 核技术 28 895］
[12] ］Zhang W H, Mo X, Wang G D, Wang L W, Xu F Q, Pan H B, Shi M M, Chen H Z, Wang M 2007 Acta Phys. Sin. 56 4936 （in Chinese）［张文华、莫雄、王国栋、王立武、徐法强、潘海斌、施敏敏、陈红征、汪茫2007 物理学报 56 4936］
[13] ］Mobus M, Karl N, Kobayashi T 1992 J. Crystal Growth 116 495
[14] ］Hill I G, Milliron D, Schwartz J, Kahn A 2000 Appl. Surf. Sci. 166 354
[15] ］Azuma Y, Hasebe T, Miyamae T, Okudaira K K,Harada Y, Seki K, Morikawa E, Saile V, Veno N 1998 J. Synchrotron Rad. 5 1004
[16] ］Nicoara N, Roman E, Gomez-Rodriguez J M, Martin-Gago J A, Mendez J 2006 Org. Electr. 7 287
[17] ］Duhm S, Gerlach A, Salzmann I, Broker B, Johnson R L, Schreiber F, Koch N 2008 Org. Electr. 9 111
[18] ］Luth H 1995 Surfaces and Interfaces of Solid Materials （Berlin: Springer） p114
[19] ］Fenter P, Burrows P E, Eisenberger P, Forrest S R 1995 J. Crystal Growth 152 65
[20] ］Stohr J, Samant M G, Luning j, Callegari A C, Chaudhari P, Doyle J P, Lacey J A, Lien S A, Purushorthaman S, Speidell J L 2001 Science 292 2299
[21] ］Stohr J 1996 NEXAFS spectroscopy （Berlin:Springer）p169
[22] ］Taborski J, Vaterlein P, Dietz H, Zimmermann U, Umbach E 1995 Journal of Electron Spectroscopy and Related Phenomena 75 129
[23] ］Zou Y, Kilian L, Scholl A, Schmidt T, Fink R, Umbach E 2006 Surf. Sci. 600 1240.
[24] ］Fenter P, Schreiber F, Zhou L, Eisenberger P, Forrest S R 1997 Phys. Rev. B 56 3046
[25] ］Gustafsson J B, Moons E, Widstrand S M, Johansson L S O 2004 Surf. Sci. 572 23
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