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InSb芯片碎裂与迸溅金点的关系

张江风 田笑含 张晓玲 孟庆端

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InSb芯片碎裂与迸溅金点的关系

张江风, 田笑含, 张晓玲, 孟庆端

Splashed gold bump dependence of cleavage of InSb chip under cyclic liquid nitrogen shocking tests

Zhang Jiang-Feng, Tian Xiao-Han, Zhang Xiao-Ling, Meng Qing-Duan
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  • 批量生产中经常发生的锑化铟(InSb)芯片碎裂问题制约着InSb红外焦平面探测器(IRFPAs)成品率的提升. 经分析认为: 低周期液氮冲击下发生在器件边沿区域的InSb芯片破碎与该区域中迸溅金点的存在有关. 为从理论上明晰迸溅金点对InSb芯片局部碎裂的影响, 本文建立了包含迸溅金点的InSb IRFPAs结构模型, 分析了迸溅金点的存在对应力分布的影响. 在此基础上, 在应力集中处预置不同长度的初始裂纹用以描述InSb晶片中的位错, 以能量释放率为判据, 探究InSb芯片碎裂与迸溅金点和位错线长短的关系. 结论如下: 1) 迸溅金点的存在对InSb芯片碎裂的影响是局部的, 在迸溅金点与InSb芯片接触区域的两侧会形成两个应力集中点; 2) 环绕预置裂纹的能量释放率会随着预置裂纹长度的增加而加速增大, 当预置裂纹长度接近InSb芯片上表面时, 能量释放率近乎指数增加, 并在预置裂纹贯穿InSb芯片时达到最大值; 3) 迸溅金点引起的InSb芯片破碎属于I型断裂失效模式, 在多周期液氮冲击中, 位错线在应力集中效应的驱使下逐步扩展, 直至贯穿InSb芯片, 最终形成宏观碎裂失效现象.
    Local cleavage of indium antimonide (InSb) chip always occurs in the manufacture of the InSb infrared focal plane detectors (IRFPAs), and this specific fracture phenomenon restricts the improvement of the yield of the InSb IRFPAs. After analysis, we think that the cleavage of InSb chip in the edge region of the InSb IRFPAs is related to the splashed gold bump existing in this region, and this failure phenomenon dominates in the low-cyclic liquid nitrogen shocking tests. In order to clarify the influence of the splashed gold bump on the cleavage of the InSb chip, we establish a structural model of the InSb IRFPAs containing the splashed gold bump, and analyze the influence of the splashed gold bump on the thermal stress distribution in the InSb chip. Besides, we preset the initial cracks with different lengths at the stress concentration sites to describe the dislocations in InSb wafers. Using the energy release rate as criterion, we obtain the relationship between the cleavage of the InSb chip and the dislocation line length in the presence of splashed gold bump. The main conclusions are drawn as follows. 1) The influence of the splashed gold bump on the cleavage of the InSb chip is localized, and two stress concentration sites are formed in the outermost part of the contact region between the splashed gold bump and the InSb chip. 2) The energy release rate surrounding the preset crack increases promptly with the preset crack length increasing. 3) Cleavage of the InSb chip caused by the splashed gold bump belongs to the type I fracture failure mode. In the cyclic liquid nitrogen shocking tests, the dislocation line gradually punches through the InSb chip under the driving of the concentrating stress, and forms the macro cleavage of the InSb chip.
      通信作者: 孟庆端, qdmengly@163.com
    • 基金项目: 国家自然科学基金青年科学基金(批准号: 61505048)、河南省高等学校重点科研项目(批准号: 19A510012)和河南省自然科学基金(批准号: 202300410157)资助的课题
      Corresponding author: Meng Qing-Duan, qdmengly@163.com
    • Funds: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61505048), the Key Scientific Research Projects of Higher Education Institutions in Henan Province, China (Grant No. 19A510012), and the Natural Science Foundation of Henan Province, China (Grant No. 202300410157).
    [1]

    吕衍秋, 鲁星, 鲁正雄, 李墨 2020 航空兵器 27 1Google Scholar

    Lv Y Q, Lu X, Lu Z X, Li M 2020 Aero Weaponry 27 1Google Scholar

    [2]

    Rogalski A 2011 Infrared Phys. Technol. 54 136Google Scholar

    [3]

    胡伟达, 李庆, 陈效双, 陆卫 2019 物理学报 68 120701Google Scholar

    Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701Google Scholar

    [4]

    Bhan R K, Dhar V 2019 Opto-Electron. Rev. 27 174Google Scholar

    [5]

    罗宏 2010 激光与红外 40 720Google Scholar

    Luo H 2010 Laser & Infrared 40 720Google Scholar

    [6]

    Meng Q D, Zhang X L, Lv Y Q, Si J J 2019 Opt. Quantum Electron. 51 1Google Scholar

    [7]

    Meng Q D, Zhang X L, Lv Y Q, Si J J 2017 Opt. Quantum Electron. 49 211Google Scholar

    [8]

    Hao L C, Huang A B, Lai C X, Chen X, Hao M M, Chen H L, Lu G G, Huang Y, En Y F 2015 Aopc: Optical & Optoelectronic Sensing & Imaging Technology Beijing, China, May 5−7, 2015 96740H-1

    [9]

    秦朗 2014 硕士学位论文 (辽宁: 大连理工大学)

    Qin L 2014 M. S. Thesis (Liaoning: Dalian University of Technology) (in Chinese)

    [10]

    巩锋, 程鹏, 吴卿, 折伟林, 陈元瑞 2013 激光与红外 43 1146Google Scholar

    Gong F, Cheng P, Wu Q, She W L, Chen Y R 2013 Laser & Infrared 43 1146Google Scholar

    [11]

    柏伟, 庞新义, 赵超 2018 红外 39 8Google Scholar

    Bai W, Pang X Y, Zhao C 2018 Infrared 39 8Google Scholar

    [12]

    Rybicki E F, Kanninen M F 1977 Eng. Fract. Mech. 9 931Google Scholar

    [13]

    Irwin G R 1956 Sagamore Res. Conf. Proc. 2 289

    [14]

    Zhang X L, Meng Q D, Lv Y Q, Si J J 2017 Infrared Phys. Technol. 86 207Google Scholar

    [15]

    Zhang L W, Meng Q D, Zhang X L, Yu Q, Lv Y Q, Si J J 2013 Infrared Phys. Technol. 60 29Google Scholar

    [16]

    Zhang L W, Meng Q D, Zhang X L, Lv Y Q 2014 J. Mech. Sci. Technol. 28 2281Google Scholar

    [17]

    Liu X H, Suo Z, Ma Q, Fujimoto H 2000 Eng. Fract. Mech. 66 387Google Scholar

  • 图 1  InSb面阵探测器制备工艺具体流程

    Fig. 1.  Specific fabricating processes of InSb IRFPAs.

    图 2  线性虚拟裂纹闭合技术原理

    Fig. 2.  Principle of virtual crack closure technique for linear crack.

    图 3  InSb面阵探测器的二维有限元模型

    Fig. 3.  Two-dimensional finite element model for InSb IRFPAs.

    图 4  迸溅金点存在与否情况下InSb芯片下表面的面内正应力分布

    Fig. 4.  Distributions of the in-plane normal stress in bottom surface of InSb chip with splashed gold bump or not.

    图 5  不同裂纹扩展长度下InSb芯片中能量释放率的演化过程

    Fig. 5.  Evolution process of energy release rate in InSb chip under different crack propagation lengths.

    表 1  InSb IRFPAs模型的相关材料参数

    Table 1.  Material parameters of InSb IRFPAs model.

    MaterialsElastic modulus
    E/GPa
    Poison’s
    ratio μ
    Temperatures
    T/K
    InSb chip409 (in plane)0.350077–300
    123 (out of plane)
    Underfill0.0002/α0.300077–300
    silicon ROIC1630.280077–300
    Indium bump20.540.432676
    16.240.4408187
    12.700.4498370
    Negative electrode790.440077–300
    注: $ \alpha = 22.46 \times {10^{ - 6}} + 5.04 \times {10^{ - 8}} \times {\text{(}}T-273{\text{)}} $, 其中 T 是Kelvin温度.
    下载: 导出CSV
  • [1]

    吕衍秋, 鲁星, 鲁正雄, 李墨 2020 航空兵器 27 1Google Scholar

    Lv Y Q, Lu X, Lu Z X, Li M 2020 Aero Weaponry 27 1Google Scholar

    [2]

    Rogalski A 2011 Infrared Phys. Technol. 54 136Google Scholar

    [3]

    胡伟达, 李庆, 陈效双, 陆卫 2019 物理学报 68 120701Google Scholar

    Hu W D, Li Q, Chen X S, Lu W 2019 Acta Phys. Sin. 68 120701Google Scholar

    [4]

    Bhan R K, Dhar V 2019 Opto-Electron. Rev. 27 174Google Scholar

    [5]

    罗宏 2010 激光与红外 40 720Google Scholar

    Luo H 2010 Laser & Infrared 40 720Google Scholar

    [6]

    Meng Q D, Zhang X L, Lv Y Q, Si J J 2019 Opt. Quantum Electron. 51 1Google Scholar

    [7]

    Meng Q D, Zhang X L, Lv Y Q, Si J J 2017 Opt. Quantum Electron. 49 211Google Scholar

    [8]

    Hao L C, Huang A B, Lai C X, Chen X, Hao M M, Chen H L, Lu G G, Huang Y, En Y F 2015 Aopc: Optical & Optoelectronic Sensing & Imaging Technology Beijing, China, May 5−7, 2015 96740H-1

    [9]

    秦朗 2014 硕士学位论文 (辽宁: 大连理工大学)

    Qin L 2014 M. S. Thesis (Liaoning: Dalian University of Technology) (in Chinese)

    [10]

    巩锋, 程鹏, 吴卿, 折伟林, 陈元瑞 2013 激光与红外 43 1146Google Scholar

    Gong F, Cheng P, Wu Q, She W L, Chen Y R 2013 Laser & Infrared 43 1146Google Scholar

    [11]

    柏伟, 庞新义, 赵超 2018 红外 39 8Google Scholar

    Bai W, Pang X Y, Zhao C 2018 Infrared 39 8Google Scholar

    [12]

    Rybicki E F, Kanninen M F 1977 Eng. Fract. Mech. 9 931Google Scholar

    [13]

    Irwin G R 1956 Sagamore Res. Conf. Proc. 2 289

    [14]

    Zhang X L, Meng Q D, Lv Y Q, Si J J 2017 Infrared Phys. Technol. 86 207Google Scholar

    [15]

    Zhang L W, Meng Q D, Zhang X L, Yu Q, Lv Y Q, Si J J 2013 Infrared Phys. Technol. 60 29Google Scholar

    [16]

    Zhang L W, Meng Q D, Zhang X L, Lv Y Q 2014 J. Mech. Sci. Technol. 28 2281Google Scholar

    [17]

    Liu X H, Suo Z, Ma Q, Fujimoto H 2000 Eng. Fract. Mech. 66 387Google Scholar

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出版历程
  • 收稿日期:  2021-08-20
  • 修回日期:  2021-09-24
  • 上网日期:  2022-01-13
  • 刊出日期:  2022-01-20

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