多孔GaN/CuZnS异质结窄带近紫外光电探测器

郭越; 孙一鸣; 宋伟东

doi:10.7498/aps.71.20220990

摘要

窄带光电探测系统在荧光检测、人工视觉等领域具有广泛应用. 为了实现对特殊波段的窄带光谱探测, 传统上需要将宽带探测器和光学滤波片集成. 但是, 随着检测技术的发展, 人们对探测系统的功耗、尺寸、成本等方面也提出了更高要求, 结构复杂、成本高的传统窄带光电探测器应用受到限制. 于是, 本文展示了一种基于多孔GaN/CuZnS异质结的无滤波、窄带近紫外光电探测器. 通过光电化学刻蚀和水浴生长方法, 分别制备了具有低缺陷密度的多孔GaN薄膜和高空穴电导率的CuZnS薄膜, 并构建了多孔GaN/CuZnS异质结近紫外光电探测器. 得益于GaN的多孔结构和CuZnS的光学滤波作用, 器件在–2 V偏压、370 nm紫外光照下, 光暗电流比超过4个数量级; 更重要的是, 器件具有超窄带近紫外光响应(半峰宽<8 nm, 峰值为370 nm). 此外, 该探测器的峰值响应度、外量子效率和比探测率分别达到了0.41 A/W, 138.6%和9.8×10¹² Jones. 这些优异的器件性能显示了基于多孔GaN/CuZnS异质结的近紫外探测器在窄光谱紫外检测领域具有广阔的应用前景.

关键词:

Abstract

Narrowband photodetection systems are widely used in fluorescence detection, artificial vision and other fields. In order to realize the narrow spectral detection of special band, it is traditionally necessary to integrate broadband detectors with optical filters. However, with the development of detection technology, higher requirements have also been placed on the power consumption, size, and cost of the detection system, and the applications of traditional narrowband photodetectors with complex structures and high costs are limited. Thus, a filterless, narrowband near-ultraviolet photodetector based on a porous GaN/CuZnS heterojunction is demonstrated. The porous GaN thin films with low defect density and CuZnS thin films with high hole conductivity are fabricated by photoelectrochemical etching and water bath growth methods, respectively, and the porous GaN/CuZnS heterojunction near-ultraviolet photodetectors are thus fabricated. Benefiting from the porous structure of GaN and the optical filtering effect of CuZnS, the photo-dark current ratio of the device exceeds four orders of magnitudes under –2 V bias and 370 nm light illumination; more importantly, the device has an ultra-narrowband near-ultraviolet photoresponse with a full width at half maximum of <8 nm (peak at 370 nm). In addition, the peak responsivity, external quantum efficiency and specific detectivity reach 0.41 A/W, 138.6% and 9.8×10¹² Jones, respectively. These excellent device performances show that the near-ultraviolet photodetectors based on porous GaN/CuZnS heterojunctions have broad application prospects in the field of narrow-spectrum ultraviolet photodetection.

Keywords:

作者及机构信息

1.
五邑大学应用物理与材料学院, 江门　529000

2.
华南师范大学半导体科学与技术学院, 广州　510631

通信作者: 孙一鸣, yimingsun@m.scnu.edu.cn ; 宋伟东, wdsongwyu@163.com

基金项目: 广东省重点领域研发计划(批准号: 2020B010174004)和广东省基础与应用基础研究基金(批准号: 2020A1515110185)资助的课题

Authors and contacts

1.
School of Applied Physics and Materials, Wuyi University, Jiangmen 529000, China

2.
School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China

Corresponding author: Sun Yi-Ming, yimingsun@m.scnu.edu.cn ; Song Wei-Dong, wdsongwyu@163.com

Funds: Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B010174004) and the Guangdong Basic and Applied Basic Research Foundation, China (Grant No. 2020A1515110185).

文章全文 : translate this paragraph

参考文献

[1]	Wang T, Liang H, Han Z, Sui Y, Mei Z 2021 Adv. Mater. Technol. 6 2000945 Google Scholar
[2]	Wang S, Wu C, Wu F, Zhang F, Liu A, Zhao N, Guo D 2021 Sens. Actuators, A 330 112870 Google Scholar
[3]	Qiu M, Sun P, Liu Y, Huang Q, Zhao C, Li Z, Mai W 2018 Adv. Mater. Technol. 3 1700288 Google Scholar
[4]	Kim M, Seo J H, Singisetti U, Ma Z 2017 J. Mater. Chem. C 5 8338 Google Scholar
[5]	Li L, Liu Z, Wang L, Zhang B, Liu Y, Ao J P 2018 Mater. Sci. Semicond. Process. 76 61 Google Scholar
[6]	Zhou H, Gui P, Yu Q, Mei J, Wang H, Fang G 2015 J. Mater. Chem. C 3 990 Google Scholar
[7]	Song W, Chen J, Li Z, Fang X 2021 Adv. Mater. 33 2101059 Google Scholar
[8]	Wang Y, Wu C, Guo D, Li P, Wang S, Liu A, Li C, Wu F, Tang W 2020 ACS. Appl. Electron. Mater. 2 2032 Google Scholar
[9]	Zhu H, Shan C X, Yao B, Li B H, Zhang J Y, Zhao D X, Shen D Z, Fan X W 2008 J. Phys. Chem. C 112 20546 Google Scholar
[10]	Ni P N, Shan C X, Wang S P, Liu X Y, Shen D Z 2013 J. Mater. Chem. C 1 4445 Google Scholar
[11]	王顺利, 王亚超, 郭道友, 李超荣, 刘爱萍 2021 物理学报 70 128502 Google Scholar Wang S L, Wang Y C, Guo D Y, Li C R, Liu A P 2021 Acta Phys. Sin. 70 128502 Google Scholar
[12]	Gui P, Li J, Zheng X, Wang H, Yao F, Hu X, Liu Y, Fang G 2020 J. Mater. Chem. C 8 6804 Google Scholar
[13]	Qin Y, Li L, Zhao X, Tompa G S, Dong H, Jian G, He Q, Tan P, Hou X, Zhang Z, Yu S, Sun H, Xu G, Miao X, Xue K, Long S, Liu M 2020 ACS Photonics 7 812 Google Scholar
[14]	裴佳楠, 蒋大勇, 田春光, 郭泽萱, 刘如胜, 孙龙, 秦杰明, 侯建华, 赵建勋, 梁庆成, 高尚 2015 物理学报 64 067802 Google Scholar Pei J N, Jiang D Y, Tian C G, Guo Z X, Liu R S, Sun L, Qin J M, Hou J H, Zhao J X, Liang Q C, Gao S 2015 Acta Phys. Sin. 64 067802 Google Scholar
[15]	Sarkar K, Kumar P 2021 Appl. Surf. Sci. 566 150695 Google Scholar
[16]	Yang C, Xi X, Yu Z, Cao H, Li J, Lin S, Ma Z, Zhao L 2018 ACS Appl. Mater. Interfaces 10 5492 Google Scholar
[17]	Calahorra Y, Spiridon B, Wineman A, Busolo T, Griffin P, Szewczyk P K, Zhu T, Jing Q, Oliver R, Kar-Narayan S 2020 Appl. Mater. Today 21 100858 Google Scholar
[18]	Xiao Y, Liu L, Ma Z H, Meng B, Qin S J, Pan G B 2019 Nanomaterials 9 1198 Google Scholar
[19]	Yu R, Wang G, Shao Y, Wu Y, Wang S, Lian G, Zhang B, Hu H, Liu L, Zhang L, Hao X 2019 J. Mater. Chem. C 7 14116 Google Scholar
[20]	Li J, Xi X, Lin S, Ma Z, Li X, Zhao L 2020 ACS Appl. Mater. Interfaces 12 11965 Google Scholar
[21]	Li J, Xi X, Li X, Lin S, Ma Z, Xiu H, Zhao L 2022 Adv. Opt. Mater. 8 1902162 Google Scholar
[22]	Li Q, Liu G, Yu J, Wang G, Wang S, Cheng T, Chen C, Liu L, Yang J, Xu X, Zhang L 2022 J. Mater. Chem. C 10 8321 Google Scholar
[23]	Huang Z, Liu J, Zhang T, Jin Y, Wang J, Fan S, Li Q 2021 ACS Appl. Mater. Interfaces 13 22796 Google Scholar
[24]	Hu J, Yang S, Zhang Z, Li H, Perumal Veeramalai C, Sulaman M, Saleem M I, Tang Y, Jiang Y, Tang L, Zou B 2021 J. Mater. Sci. Technol. 68 216 Google Scholar
[25]	Rajamani S, Arora K, Konakov A, Belov A, Korolev D, Nikolskaya A, Mikhaylov A, Surodin S, Kryukov R, Nikolitchev D, Sushkov A, Pavlov D, Tetelbaum D, Kumar M, Kumar M 2018 Nanotechnology 29 305603 Google Scholar
[26]	Lan Z, Lau Y S, Wang Y, Xiao Z, Ding L, Luo D, Zhu F 2020 Adv. Opt. Mater. 8 2001388 Google Scholar
[27]	Qin Z, Song D, Xu Z, Qiao B, Huang D, Zhao S 2020 Org. Electron. 76 105417 Google Scholar
[28]	Wang J, Xiao S, Qian W, Zhang K, Yu J, Xu X, Wang G, Zheng S, Yang S 2021 Adv. Mater. 33 2005557 Google Scholar
[29]	Li J, Yang C, Liu L, Cao H, Lin S, Xi X, Li X, Ma Z, Wang K, Patanè A, Zhao L 2020 Adv. Opt. Mater. 8 1901276 Google Scholar
[30]	Guo Y, Song W, Liu Q, Sun Y, Chen Z, He X, Zeng Q, Luo X, Zhang R, Li S 2022 J. Mater. Chem. C 10 5116 Google Scholar
[31]	Wang X, Pan Y, Xu Y, Zhao J, Li Y, Li Q, Chen J, Zhao Z, Zhang X, Elemike E E, Onwudiwe D C, Bae B S, Lei W 2022 Adv. Electron. Mater. 8 2200178 Google Scholar
[32]	Guo H, Jiang L, Huang K, Wang R, Liu S, Li Z, Rong X, Dong G 2021 Org. Electron. 92 106122 Google Scholar
[33]	Zhang Y, Song W 2021 J. Mater. Chem. C 9 4799 Google Scholar
[34]	Zhang Y, Xu X, Fang X 2019 InfoMat 1 542 Google Scholar
[35]	Davis E A, Mott N F 1970 Philos. Mag. 22 0903 Google Scholar
[36]	Zheng Y, Li Y, Tang X, Wang W, Li G 2020 Adv. Opt. Mater. 8 2000197 Google Scholar
[37]	Shen L, Zhang Y, Bai Y, Zheng X, Wang Q, Huang J 2016 Nanoscale 8 12990 Google Scholar
[38]	李秀华, 张敏, 杨佳, 邢爽, 高悦, 李亚泽, 李思雨, 王崇杰 2022 物理学报 71 048501 Google Scholar Li X H, Zhang M, Yang J, Xing S, Gao Y, Li Y Z, Li S Y, Wang C J 2022 Acta Phys. Sin. 71 048501 Google Scholar
[39]	玄鑫淼, 王加恒, 毛彦琦, 叶利娟, 张红, 李泓霖, 熊元强, 范嗣强, 孔春阳, 李万俊 2021 物理学报 70 238502 Google Scholar Xuan X M, Wang J H, Mao Y Q, Ye L J, Zhang H, Li H L, Xiong Y Q, Fan S Q, Kong C Y, Li W J 2021 Acta Phys. Sin. 70 238502 Google Scholar
[40]	Yadav A, Agrawal J, Singh V 2021 IEEE Photonics Technol. Lett. 33 1065 Google Scholar
[41]	Zheng L, Hu K, Teng F, Fang X 2017 Small 13 1602448 Google Scholar
[42]	Song W, Wang X, Xia C, Wang R, Zhao L, Guo D, Chen H, Xiao J, Su S, Li S 2017 Nano Energy 33 272 Google Scholar
[43]	Xu X, Chen J, Cai S, Long Z, Zhang Y, Su L, He S, Tang C, Liu P, Peng H, Fang X 2018 Adv. Mater. 30 1803165 Google Scholar
[44]	Wang L, Jie J, Shao Z, Zhang Q, Zhang X, Wang Y, Sun Z, Lee S-T 2015 Adv. Funct. Mater. 25 2910 Google Scholar
[45]	Li L, Deng Y, Bao C, Fang Y, Wei H, Tang S, Zhang F, Huang J 2017 Adv. Opt. Mater. 5 1700672 Google Scholar
[46]	Wang W, Zhang F, Du M, Li L, Zhang M, Wang K, Wang Y, Hu B, Fang Y, Huang J 2017 Nano Lett. 17 1995 Google Scholar
[47]	Shen L, Fang Y, Wei H, Yuan Y, Huang J 2016 Adv. Mater. 28 2043 Google Scholar
[48]	Li W, Li D, Dong G, Duan L, Sun J, Zhang D, Wang L 2016 Laser Photonics Rev. 10 473 Google Scholar
[49]	Zhang Y, Xu J, Shi S, Gao Y, Wang C, Zhang X, Yin S, Li L 2016 ACS Appl. Mater. Interfaces 8 22647 Google Scholar
[50]	Wang H, Chen H, Li L, Wang Y, Su L, Bian W, Li B, Fang X 2019 J Phys Chem Lett 10 6850 Google Scholar
[51]	Hu L, Yan J, Liao M, Xiang H, Gong X, Zhang L, Fang X 2012 Adv. Mater. 24 2305 Google Scholar

施引文献

图 1 (a)多孔GaN、(b)平面GaN以及(c) CuZnS薄膜的SEM表征; (d) CuZnS薄膜的EDX分析

Fig. 1. SEM characterization of (a) porous GaN, (b) planar GaN and (c) CuZnS film; (d) EDX analysis of the CuZnS films.

下载: 全尺寸图片幻灯片

图 2 (a)多孔GaN薄膜和CuZnS薄膜的反射率图谱; (b) CuZnS薄膜的衍射图谱; 多孔GaN薄膜和(c)多孔GaN、CuZnS薄膜以及异质结的紫外-可见吸收光谱(插图为CuZnS的Tauc图)

Fig. 2. (a) Reflectance patterns of porous GaN and CuZnS films; (b) XRD patterns of CuZnS films; (c) UV-vis absorption spectrum of porous GaN, CuZnS films and GaN/CuZnS heterojunction; inset in (c) shows the Tauc plot of the CuZnS films.

下载: 全尺寸图片幻灯片

图 3 (a)多孔GaN/CuZnS异质结器件的I-V特性曲线(插图为多孔GaN/CuZnS异质结器件结构示意图); (b) CuZnS器件和(c)多孔GaN器件的I-V特性曲线, (b)和(c)中的插图分别显示了器件在370 nm光开关周期下的I-t曲线和相应的器件结构

Fig. 3. I-V characteristics of the (a) porous GaN/CuZnS heterojunction PD, inset in (a) shows the schematic illustration of the porous GaN/CuZnS structure; I-V characteristics of the (b) CuZnS PD devices and (c) porous GaN PD, insets in (b) and (c) show the I-t curves under switching 370 nm light illumination and corresponding device structures, respectively.

下载: 全尺寸图片幻灯片

图 4 不同刻蚀电压(V = 10, 15, 25 V)所制备的光电探测器的(a)光电流及光暗电流比、(b)响应度、(c)比探测率, 图(c)插图为器件的外量子效率

Fig. 4. (a) Photocurrent and light-to-dark ratio, (b) responsivity and (c) specific detectivity of PDs prepared for different etching voltages (V = 10, 15, 25 V); inset in (c) shows the external quantum efficiency of PDs.

下载: 全尺寸图片幻灯片

图 5 (a)不同强度的370 nm光照下多孔GaN/CuZnS异质结光电探测器的I-V特性; (b)光强和光电流相应的线性拟合曲线; (c)响应度和比探测率随光强变化; (d)多孔GaN/CuZnS异质结的能带示意图

Fig. 5. (a) Light intensity dependent I-V characteristics of porous GaN/CuZnS heterojunction PD under 370 nm light illumination; (b) light intensity dependent photocurrent and the corresponding linear fitting curve; (c) responsivity and detectivity as a function of light intensity; (d) the schematic energy band diagram of the porous GaN/CuZnS heterojunction.

下载: 全尺寸图片幻灯片

表 1 CuZnS薄膜和多孔GaN的霍尔效应测试数据

Table 1. Hall-effect test data of CuZnS films and porous GaN.

Sample	Temp./K	Bulk Con./cm^–3	Resistivity/(Ω·cm)	Conductivity/ (Ω·cm)^–1	Mobility/ (cm²·(V·s)^–1)
CuZnS	295	5.24×10¹⁸	0.324	3.08	36.7
Porous GaN	295	1.39×10¹⁷	0.127	7.89	355

下载: 导出CSV

表 2 无滤波器、窄带PD的典型参数比较

Table 2. Comparison of typical parameters of filter-free, narrowband PDs.

Active materials	Peak wavelength/ nm	FWHM/nm	Bias/V	EQE/%	R/ (mA·W^–1)	D^*/ Jones	On/off ratio	Ref.
PC₇₁BM:PbS	890	50	–7	183	1310	8.0×10¹¹	～10⁴	[37]
Hybrid perovskite	780	28	0	12.1	76	2.65×10¹²	–	[45]
P₃HT:PC₇₁BM	650	29	–10	49.0	255	1.3×10¹¹	～10²	[46]
P₃HT:PCBM:CdTe	660	80	–6	～200	～1064	7.3×10¹¹	～10⁴	[47]
Organic ISQ	680	80	–2	15.0	82.3	3.2×10¹²	1.8×10³	[48]
p-NiO/n-ZnO	380	30	0	0.5	1.4	—	—	[49]
Porous GaN/CuZnS	370	8	–2	136.8	413.7	9.8×10¹²	>10⁴	This work

下载: 导出CSV

[1]	Wang T, Liang H, Han Z, Sui Y, Mei Z 2021 Adv. Mater. Technol. 6 2000945 Google Scholar
[2]	Wang S, Wu C, Wu F, Zhang F, Liu A, Zhao N, Guo D 2021 Sens. Actuators, A 330 112870 Google Scholar
[3]	Qiu M, Sun P, Liu Y, Huang Q, Zhao C, Li Z, Mai W 2018 Adv. Mater. Technol. 3 1700288 Google Scholar
[4]	Kim M, Seo J H, Singisetti U, Ma Z 2017 J. Mater. Chem. C 5 8338 Google Scholar
[5]	Li L, Liu Z, Wang L, Zhang B, Liu Y, Ao J P 2018 Mater. Sci. Semicond. Process. 76 61 Google Scholar
[6]	Zhou H, Gui P, Yu Q, Mei J, Wang H, Fang G 2015 J. Mater. Chem. C 3 990 Google Scholar
[7]	Song W, Chen J, Li Z, Fang X 2021 Adv. Mater. 33 2101059 Google Scholar
[8]	Wang Y, Wu C, Guo D, Li P, Wang S, Liu A, Li C, Wu F, Tang W 2020 ACS. Appl. Electron. Mater. 2 2032 Google Scholar
[9]	Zhu H, Shan C X, Yao B, Li B H, Zhang J Y, Zhao D X, Shen D Z, Fan X W 2008 J. Phys. Chem. C 112 20546 Google Scholar
[10]	Ni P N, Shan C X, Wang S P, Liu X Y, Shen D Z 2013 J. Mater. Chem. C 1 4445 Google Scholar
[11]	王顺利, 王亚超, 郭道友, 李超荣, 刘爱萍 2021 物理学报 70 128502 Google Scholar Wang S L, Wang Y C, Guo D Y, Li C R, Liu A P 2021 Acta Phys. Sin. 70 128502 Google Scholar
[12]	Gui P, Li J, Zheng X, Wang H, Yao F, Hu X, Liu Y, Fang G 2020 J. Mater. Chem. C 8 6804 Google Scholar
[13]	Qin Y, Li L, Zhao X, Tompa G S, Dong H, Jian G, He Q, Tan P, Hou X, Zhang Z, Yu S, Sun H, Xu G, Miao X, Xue K, Long S, Liu M 2020 ACS Photonics 7 812 Google Scholar
[14]	裴佳楠, 蒋大勇, 田春光, 郭泽萱, 刘如胜, 孙龙, 秦杰明, 侯建华, 赵建勋, 梁庆成, 高尚 2015 物理学报 64 067802 Google Scholar Pei J N, Jiang D Y, Tian C G, Guo Z X, Liu R S, Sun L, Qin J M, Hou J H, Zhao J X, Liang Q C, Gao S 2015 Acta Phys. Sin. 64 067802 Google Scholar
[15]	Sarkar K, Kumar P 2021 Appl. Surf. Sci. 566 150695 Google Scholar
[16]	Yang C, Xi X, Yu Z, Cao H, Li J, Lin S, Ma Z, Zhao L 2018 ACS Appl. Mater. Interfaces 10 5492 Google Scholar
[17]	Calahorra Y, Spiridon B, Wineman A, Busolo T, Griffin P, Szewczyk P K, Zhu T, Jing Q, Oliver R, Kar-Narayan S 2020 Appl. Mater. Today 21 100858 Google Scholar
[18]	Xiao Y, Liu L, Ma Z H, Meng B, Qin S J, Pan G B 2019 Nanomaterials 9 1198 Google Scholar
[19]	Yu R, Wang G, Shao Y, Wu Y, Wang S, Lian G, Zhang B, Hu H, Liu L, Zhang L, Hao X 2019 J. Mater. Chem. C 7 14116 Google Scholar
[20]	Li J, Xi X, Lin S, Ma Z, Li X, Zhao L 2020 ACS Appl. Mater. Interfaces 12 11965 Google Scholar
[21]	Li J, Xi X, Li X, Lin S, Ma Z, Xiu H, Zhao L 2022 Adv. Opt. Mater. 8 1902162 Google Scholar
[22]	Li Q, Liu G, Yu J, Wang G, Wang S, Cheng T, Chen C, Liu L, Yang J, Xu X, Zhang L 2022 J. Mater. Chem. C 10 8321 Google Scholar
[23]	Huang Z, Liu J, Zhang T, Jin Y, Wang J, Fan S, Li Q 2021 ACS Appl. Mater. Interfaces 13 22796 Google Scholar
[24]	Hu J, Yang S, Zhang Z, Li H, Perumal Veeramalai C, Sulaman M, Saleem M I, Tang Y, Jiang Y, Tang L, Zou B 2021 J. Mater. Sci. Technol. 68 216 Google Scholar
[25]	Rajamani S, Arora K, Konakov A, Belov A, Korolev D, Nikolskaya A, Mikhaylov A, Surodin S, Kryukov R, Nikolitchev D, Sushkov A, Pavlov D, Tetelbaum D, Kumar M, Kumar M 2018 Nanotechnology 29 305603 Google Scholar
[26]	Lan Z, Lau Y S, Wang Y, Xiao Z, Ding L, Luo D, Zhu F 2020 Adv. Opt. Mater. 8 2001388 Google Scholar
[27]	Qin Z, Song D, Xu Z, Qiao B, Huang D, Zhao S 2020 Org. Electron. 76 105417 Google Scholar
[28]	Wang J, Xiao S, Qian W, Zhang K, Yu J, Xu X, Wang G, Zheng S, Yang S 2021 Adv. Mater. 33 2005557 Google Scholar
[29]	Li J, Yang C, Liu L, Cao H, Lin S, Xi X, Li X, Ma Z, Wang K, Patanè A, Zhao L 2020 Adv. Opt. Mater. 8 1901276 Google Scholar
[30]	Guo Y, Song W, Liu Q, Sun Y, Chen Z, He X, Zeng Q, Luo X, Zhang R, Li S 2022 J. Mater. Chem. C 10 5116 Google Scholar
[31]	Wang X, Pan Y, Xu Y, Zhao J, Li Y, Li Q, Chen J, Zhao Z, Zhang X, Elemike E E, Onwudiwe D C, Bae B S, Lei W 2022 Adv. Electron. Mater. 8 2200178 Google Scholar
[32]	Guo H, Jiang L, Huang K, Wang R, Liu S, Li Z, Rong X, Dong G 2021 Org. Electron. 92 106122 Google Scholar
[33]	Zhang Y, Song W 2021 J. Mater. Chem. C 9 4799 Google Scholar
[34]	Zhang Y, Xu X, Fang X 2019 InfoMat 1 542 Google Scholar
[35]	Davis E A, Mott N F 1970 Philos. Mag. 22 0903 Google Scholar
[36]	Zheng Y, Li Y, Tang X, Wang W, Li G 2020 Adv. Opt. Mater. 8 2000197 Google Scholar
[37]	Shen L, Zhang Y, Bai Y, Zheng X, Wang Q, Huang J 2016 Nanoscale 8 12990 Google Scholar
[38]	李秀华, 张敏, 杨佳, 邢爽, 高悦, 李亚泽, 李思雨, 王崇杰 2022 物理学报 71 048501 Google Scholar Li X H, Zhang M, Yang J, Xing S, Gao Y, Li Y Z, Li S Y, Wang C J 2022 Acta Phys. Sin. 71 048501 Google Scholar
[39]	玄鑫淼, 王加恒, 毛彦琦, 叶利娟, 张红, 李泓霖, 熊元强, 范嗣强, 孔春阳, 李万俊 2021 物理学报 70 238502 Google Scholar Xuan X M, Wang J H, Mao Y Q, Ye L J, Zhang H, Li H L, Xiong Y Q, Fan S Q, Kong C Y, Li W J 2021 Acta Phys. Sin. 70 238502 Google Scholar
[40]	Yadav A, Agrawal J, Singh V 2021 IEEE Photonics Technol. Lett. 33 1065 Google Scholar
[41]	Zheng L, Hu K, Teng F, Fang X 2017 Small 13 1602448 Google Scholar
[42]	Song W, Wang X, Xia C, Wang R, Zhao L, Guo D, Chen H, Xiao J, Su S, Li S 2017 Nano Energy 33 272 Google Scholar
[43]	Xu X, Chen J, Cai S, Long Z, Zhang Y, Su L, He S, Tang C, Liu P, Peng H, Fang X 2018 Adv. Mater. 30 1803165 Google Scholar
[44]	Wang L, Jie J, Shao Z, Zhang Q, Zhang X, Wang Y, Sun Z, Lee S-T 2015 Adv. Funct. Mater. 25 2910 Google Scholar
[45]	Li L, Deng Y, Bao C, Fang Y, Wei H, Tang S, Zhang F, Huang J 2017 Adv. Opt. Mater. 5 1700672 Google Scholar
[46]	Wang W, Zhang F, Du M, Li L, Zhang M, Wang K, Wang Y, Hu B, Fang Y, Huang J 2017 Nano Lett. 17 1995 Google Scholar
[47]	Shen L, Fang Y, Wei H, Yuan Y, Huang J 2016 Adv. Mater. 28 2043 Google Scholar
[48]	Li W, Li D, Dong G, Duan L, Sun J, Zhang D, Wang L 2016 Laser Photonics Rev. 10 473 Google Scholar
[49]	Zhang Y, Xu J, Shi S, Gao Y, Wang C, Zhang X, Yin S, Li L 2016 ACS Appl. Mater. Interfaces 8 22647 Google Scholar
[50]	Wang H, Chen H, Li L, Wang Y, Su L, Bian W, Li B, Fang X 2019 J Phys Chem Lett 10 6850 Google Scholar
[51]	Hu L, Yan J, Liao M, Xiang H, Gong X, Zhang L, Fang X 2012 Adv. Mater. 24 2305 Google Scholar

[1]	王爱伟, 祝鲁平, 单衍苏, 刘鹏, 曹学蕾, 曹丙强. 利用脉冲激光沉积外延制备CsSnBr₃/Si异质结高性能光电探测器. 物理学报, 2024, 73(5): 058503. doi: 10.7498/aps.73.20231645
[2]	张盛源, 夏康龙, 张茂林, 边昂, 刘增, 郭宇锋, 唐为华. 基于GaN/(BA)₂PbI₄异质结的自供电双模式紫外探测器. 物理学报, 2024, 73(6): 067301. doi: 10.7498/aps.73.20231698
[3]	宜子琪, 王彦明, 王硕, 隋雪, 石佳辉, 杨壹涵, 王德煜, 冯秋菊, 孙景昌, 梁红伟. 基于机械剥离制备的PEDOT:PSS/β-Ga₂O₃微米片异质结紫外光电探测器研究. 物理学报, 2024, 73(15): 157102. doi: 10.7498/aps.73.20240630
[4]	王婉玉, 石凯熙, 李金华, 楚学影, 方铉, 匡尚奇, 徐国华. MoO₃覆盖层对MoS₂基光伏型光电探测器性能的影响. 物理学报, 2023, 72(14): 147301. doi: 10.7498/aps.72.20230464
[5]	刘玮, 冯秋菊, 宜子琪, 俞琛, 王硕, 王彦明, 隋雪, 梁红伟. Cu掺杂β-Ga₂O₃薄膜的制备及紫外探测性能. 物理学报, 2023, 72(19): 198503. doi: 10.7498/aps.72.20230971
[6]	李磊, 支钰崧, 张茂林, 刘增, 张少辉, 马万煜, 许强, 沈高辉, 王霞, 郭宇锋, 唐为华. 关于Ga₂O₃/Al_0.1Ga_0.9N同型异质结的双波段、双模式紫外探测性能分析. 物理学报, 2023, 72(2): 027301. doi: 10.7498/aps.72.20221738
[7]	雷挺, 吕伟明, 吕文星, 崔博垚, 胡瑞, 时文华, 曾中明. 光栅局域调控二维光电探测器. 物理学报, 2021, 70(2): 027801. doi: 10.7498/aps.70.20201325
[8]	姚文乾, 孙健哲, 陈建毅, 郭云龙, 武斌, 刘云圻. 二维平面和范德瓦耳斯异质结的可控制备与光电应用. 物理学报, 2021, 70(2): 027901. doi: 10.7498/aps.70.20201419
[9]	龙慧, 胡建伟, 吴福根, 董华锋. 基于二维材料异质结可饱和吸收体的超快激光器. 物理学报, 2020, 69(18): 188102. doi: 10.7498/aps.69.20201235
[10]	左依凡, 李培丽, 栾开智, 王磊. 基于自准直效应的光子晶体异质结偏振分束器. 物理学报, 2018, 67(3): 034204. doi: 10.7498/aps.67.20171815
[11]	温家乐, 徐志成, 古宇, 郑冬琴, 钟伟荣. 异质结碳纳米管的热整流效率. 物理学报, 2015, 64(21): 216501. doi: 10.7498/aps.64.216501
[12]	裴佳楠, 蒋大勇, 田春光, 郭泽萱, 刘如胜, 孙龙, 秦杰明, 侯建华, 赵建勋, 梁庆成, 高尚. 包埋Pt纳米粒子对金属-半导体-金属结构ZnO紫外光电探测器性能的影响. 物理学报, 2015, 64(6): 067802. doi: 10.7498/aps.64.067802
[13]	段宝兴, 杨银堂. 阶梯AlGaN外延新型Al0.25Ga0.75N/GaN HEMTs击穿特性分析. 物理学报, 2014, 63(5): 057302. doi: 10.7498/aps.63.057302
[14]	伍楷舜, 龙兴腾, 董建文, 陈弟虎, 汪河洲. 光子晶体异质结的位相和应用. 物理学报, 2008, 57(10): 6381-6385. doi: 10.7498/aps.57.6381
[15]	张伟英, 邬小鹏, 孙利杰, 林碧霞, 傅竹西. ZnO/Si异质结的光电转换特性研究. 物理学报, 2008, 57(7): 4471-4475. doi: 10.7498/aps.57.4471
[16]	孙晖, 张琦锋, 吴锦雷. 基于氧化锌纳米线的紫外发光二极管. 物理学报, 2007, 56(6): 3479-3482. doi: 10.7498/aps.56.3479
[17]	关春颖, 苑立波. 六角蜂窝结构光子晶体异质结带隙特性研究. 物理学报, 2006, 55(3): 1244-1247. doi: 10.7498/aps.55.1244
[18]	刘江涛, 周云松, 王福合, 顾本源. 不同晶格光子晶体异质结的界面传导模. 物理学报, 2004, 53(6): 1845-1849. doi: 10.7498/aps.53.1845
[19]	刘红, 陈将伟. 纳米碳管异质结的结构及其电学性质. 物理学报, 2003, 52(3): 664-667. doi: 10.7498/aps.52.664
[20]	李国辉, 周世平, 徐得名. GaAs/AlGaAs异质结动力学行为研究. 物理学报, 2001, 50(8): 1567-1573. doi: 10.7498/aps.50.1567

计量

文章访问数: 6038
PDF下载量: 174
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板