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In this paper, the resistive switching characteristics of Ag/BiFeO3/Fe2O3/ITO multilayer film deposited on ITO by magnetron sputtering are investigated. The Ag/BiFeO3/Fe2O3/ITO devices all exhibit superior resistive switching behaviors due to the formation of Ag conducting filaments. The resistive switching ratio of the device is close to 10 for the sample with 100nm-thick Fe2O3 film. The current value of the device increases sharply at 0.56 V when the voltage is swept forward, and the device switches from LRS back to HRS at –0.3 V when a voltage of opposite polarity is applied. The I-V curves of the device are fitted in double logarithmic coordinates. It is found that the device is controlled by an Ohmic conduction model in the low resistance state and by two conduction models in the high resistance state: Ohmic conduction in the low bias region, and the SCLC conduction model at higher voltages. Such a resistive switching characteristic with very low switching voltage and a high resistance ratio is particularly important for the application of resistive stochastic storage. In addition, all samples show an obvious negative differential resistance effect, which is caused by Joule heating. The Ag/BiFeO3/Fe2O3/ITO device show both resistive switching characteristics and a negative differential resistance effect, which have important applications.
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图 1 (a) Ag/BiFeO3/Fe2O3/ITO的结构图; (b) Fe2O3层厚度约为100 nm时器件的SEM截面
Fig. 1. (a) Schematic diagram of the Ag/BiFeO3/Fe2O3/ITO structure; (b) cross-sectional SEM image of the device with Fe2O3 layer thickness of approximately 100 nm.
图 2 (a) Fe2O3厚为100 nm的BFO/Fe2O3/ITO的I-V曲线; (b) 对应于(a)周期的半对数尺度I-V曲线; (c) Fe2O3厚为200 nm器件的BFO/Fe2O3/ITO的I-V曲线; (d) 对应于(c)周期的半对数尺度I-V曲线; (e) Fe2O3厚为300 nm器件中BFO/Fe2O3/ITO的I-V曲线; (f) 对应于(e)周期的半对数尺度I-V曲线
Fig. 2. (a) I-V characteristics of BFO/Fe2O3/ITO with 100 nm-thick Fe2O3; (b) semi-log scale I-V curve corresponding to (a); (c) I-V characteristics of BFO/Fe2O3/ITO device with 200 nm-thick Fe2O3; (d) semi-log scale I-V curve corresponding to (c); (e) I-V characteristics of BFO/Fe2O3/ITO in the device with 300 nm-thick Fe2O3; (f) semi-log scale I-V curve corresponding to (e).
图 3 正扫描电压下BFO/Fe2O3/ITO的I-V双对数拟合图 (a) Fe2O3层的厚度约为100 nm; (b) Fe2O3层的厚度约为200 nm; (c) Fe2O3层的厚度约为300 nm
Fig. 3. Double-logarithmic fitting plots of I-V characteristics for BFO/Fe2O3/ITO under forward voltage scanning, with Fe2O3 layer thicknesses of (a) ~100 nm, (b) ~200 nm, and (c) ~300 nm.
图 4 Fe2O3层厚约为100 nm的BFO/Fe2O3/ITO器件表现出优异的RS行为和稳定的NDR效应, 具有RRAM器件的潜力, 设备的稳定性是衡量设备性能的标准之一
Fig. 4. The BFO/Fe2O3/ITO device with ~100 nm-thick Fe2O3 layer demonstrates excellent resistive switching (RS) behavior and stable negative differential resistance (NDR) effect, indicating potential for RRAM applications. Device stability serves as a key performance metric.
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