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In this paper, the resistive switching characteristics of Ag/BiFeO3/Fe2O3/ITO multilayer film deposited on ITO by magnetron sputtering are investigated. The All Ag/BiFeO3/Fe2O3/ITO device exhibits superior resistive switching behavior due to the formation of Ag conducting filaments. The resistive switching ratio of the device is close to 10 for the sample with 100 nm thickness of Fe2O3. The current value of the device increases sharply at 0.56 V when the voltage is swept forward, and the device switches from LRS back to HRS at -0.3 V when a voltage of opposite polarity is applied. The I-V curves of the device are fitted in double logarithmic coordinates, and it is found that the device is controlled by an ohmic conduction model in the low resistance state and two conduction models in the high resistance state: in the low bias region, which exhibits ohmic conduction, and at higher voltages, which is controlled by the SCLC conduction model. Such a resistive switching characteristic with very low switching voltage and high resistance ratio is of particular importance in the application of resistive stochastic storage. In addition, all sample show obvious negative differential resistance effect, which is caused by Joule heat. The Ag/BiFeO3/Fe2O3/ITO device show both resistive switching characteristics and negative differential resistance effect (figure 1）, which give important application.
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