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HfOX忆阻器因其低操作电压、良好的耐受性及循环特性等优异性能，使其成为下一代非易失性存储器最有前景的候选者之一。然而，由于HfOX薄膜内氧空位导电细丝的形成和断裂的随机性，器件阈值电压分布较为分散，整体稳定性较差，因此，通过调控氧空位来提高HfOX器件的稳定性具有重要的研究意义。本研究采用磁控溅射法制备了不同氩氧比的三组器件，均表现出双极性阻变特性。在三种不同氩氧比的W/HfOX/Pt器件中，氩氧比为45:5的器件展现出最优的综合性能： I-V循环超过200次、开关比~103、在104 s内具有优异的数据保持特性且阈值电压分布集中，表明器件稳定性显著提高。通过构建氧空位调控与导电细丝演变的物理模型，揭示了氧空位浓度对阻变机理的影响机制。本研究明确了氧空位的调控HfOX忆阻器性能的关键作用，为发展高性能、高可靠性的阻变存储器提供了有效途径。HfOX memristors have emerged as one of the most promising candidates for next-generation non-volatile memory due to their low operating voltage, excellent endurance, and cycling characteristics. However, the randomness in the formation and rupture of oxygen vacancy conductive filaments within HfOX thin films leads to a relatively dispersed threshold voltage distribution and poor stability. Therefore, improving the stability of HfOX devices by modulating oxygen vacancies is of significant research importance. In this study, three groups of W/HfOX/Pt devices were prepared using magnetron sputtering with argon-to-oxygen ratios of 30:20, 40:10 and 45:5, respectively. XPS results indicated that the 45:5 device has the highest oxygen vacancy concentration(25.59%). All three groups exhibited bipolar resistive switching behavior. Among the three W/HfOX/Pt devices, the device with argon-to-oxygen ratio of 45:5 demonstrated the best overall performance: over 200 I-V cycles, a switching ratio of ~103, excellent data retention within 104 seconds, and a concentrated threshold voltage distribution. Analysis of the conduction mechanisms revealed that the device follows a space-charge-limited current (SCLC) mechanism in the high-resistance state and exhibits Ohmic conduction behavior in the low-resistance state. In the initial state, there is a high density of oxygen vacancies near the nucleation region of the conductive filament, which shortens the effective migration path of oxygen vacancies. Under an applied electric field, negatively charged oxygen ions migrate toward the top electrode, while oxygen vacancies gradually accumulate from the bottom electrode to the top electrode, leading to the formation of continuous conductive filaments. A higher oxygen vacancy concentration facilitates the development of robust and structurally more stable conductive filaments, thereby enhancing the uniformity of resistive switching and device reliability. This study reveals the critical role of oxygen vacancy modulation in the performance of HfOX memristors and provides an effective pathway for developing high-performance and highly reliable resistive random-access memory.
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Keywords:
- Memristor /
- HfOX thin film /
- Oxygen vacancy /
- Conductive filament
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