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超导动态电感探测器具有低噪声、低暗电流、高灵敏度和高动态范围的特点，制备工艺相对简单，且支持本征的高复用因子频分复用读出，引领着下一代毫米波/亚毫米波和太赫兹天文观测大规模探测器阵列技术发展.本文基于与低温黑体源耦合的15 THz铝基超导动态电感探测器，采用频移响应模型法，在一个较宽的吸收功率范围内，良好地拟合了探测器谐振频率偏移与耗散随吸收功率的变化关系，进而得到其响应度，以标定光学噪声等效功率.在300 Hz调制频率下，相对于吸收功率，测得探测器频率读出最小光学噪声等效功率为$7.5 \times 10^{-18} \mathrm{~W} / \sqrt{\mathrm{Hz}}$z，并在1.3 fW以上吸收功率，达光子噪声限性能.与经典的小信号分析法相比，频移响应模型法为动态电感探测器的光学响应度与噪声等效功率表征提供了一种高效、快捷的替代方案.本研究为极低温环境下高灵敏太赫兹超导动态电感探测器噪声等效功率表征，提供了有价值的技术参考.For future millimeter/submillimeter and terahertz astronomy, kilo-pixel imaging arrays of ultra-sensitive, background-limited detectors are essential. Superconducting kinetic inductance detectors (KIDs) are a leading candidate for this purpose, given their intrinsic frequency-domain multiplexing and straightforward fabrication. Aluminum, which has a long quasiparticle lifetime, is a crucial material for implementing the sensitive element of a KID. A key figure of merit that quantifies detector sensitivity is the noise equivalent power (NEP). This study compares two characterization methods — small-signal analysis and a frequency-shift response model—for optical responsivity and NEP of an aluminum-based terahertz KID coupled to a cryogenic blackbody. The KID is a lumpedelement, high-Q microwave resonator consisting of a tantalum interdigitated capacitor in parallel with an aluminum inductor, with the latter acting as the 15 THz absorber. The small-signal analysis method, which employs phase and amplitude as observables, demands high precision in blackbody temperature control and involves long measurement times. In contrast, the frequency shift response model method, utilizing frequency and dissipation as observables, places less stringent demands on thermometer resolution and enables faster measurements. Moreover, it fits the fractional frequency shift response more accurately than linear models. Consequently, it represents an efficient and rapid approach for characterizing the optical responsivity and NEP of KIDs. With this method, a minimum optical frequency NEP of $7.5 \times 10^{-18} \mathrm{~W} / \sqrt{\mathrm{Hz}}$ and a dissipation NEP of $7.1 \times 10^{-18} \mathrm{~W} / \sqrt{\mathrm{Hz}}$ were achieved for the terahertz KID at 300 Hz, referenced to the absorbed power. Furthermore, the frequency NEP significantly exceeded the dissipation NEP at 1, 10, and 100 Hz, which is attributable to two-level system noise. Our work offers valuable technical guidance for the rapid NEP characterization of high-sensitivity terahertz KIDs in low-temperature measurement applications.
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Keywords:
- noise equivalent power (NEP) /
- optical responsivity /
- characterization methods /
- kinetic inductance detectors (KIDs)
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