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柱状与孔状图形衬底对MOVPE生长GaN体材料及LED器件的影响

江洋 罗毅 汪莱 李洪涛 席光义 赵维 韩彦军

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柱状与孔状图形衬底对MOVPE生长GaN体材料及LED器件的影响

江洋, 罗毅, 汪莱, 李洪涛, 席光义, 赵维, 韩彦军

Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures

Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun
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  • 在柱状图形蓝宝石衬底(PSS-p)和孔状图形蓝宝石衬底(PSS-h)上外延了GaN体材料和LED结构并进行了详细对比和分析.X射线衍射仪(XRD)和原子力显微镜(AFM)测试结果表明,PSS-h上体材料的晶体质量和表面形貌都优于PSS-p上体材料的特性,通过断面扫面电子显微镜(SEM)照片看出PSS-h上GaN的侧向生长是导致这种差异的原因.另外,基于PSS-p和PSS-h上外延的LED材料制作而成的器件结果表明,其20?mA下光功率水平相比普通蓝宝石衬底(CSS)分别提高了46%和33%.通过变温光荧光
    Bulk GaN material and LED structures on pillar-patterned sapphire substrates (PSS-p) and hole-patterned sapphire substrates (PSS-h) were grown by MOCVD and the characteristic was compared in detail. X-ray diffraction and atomic force microscope measurements show a better crystal quality and surface morphology of GaN on PSS-h than that of GaN on PSS-p, which is due to the lateral growth of GaN on PSS-h observed from cross-sectional scanning electron microscopy. Furthermore, the output power of LED on PSS-p and PSS-h with 20 mA injection current are 46% and 33% higher than LED on conventional sapphire substrate, respectively. The temperature-dependent photoluminesence measurements indicate that the internal quantum efficiencies of all samples are quite close. Therefore, the airgaps between GaN and PSS-h act against the improvement of light extraction efficiency.
    • 基金项目: 国家自然科学基金(批准号:60536020,60723002),国家重点基础研究发展计划“973”(批准号:2006CB302801,2006CB302804,2006CB302806, 2006CB921106),国家高技术研究发展计划“863”(批准号:2006AA03A105),北京市科委重大计划(批准号:D0404003040321)资助的课题.
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  • 文章访问数:  7178
  • PDF下载量:  2292
  • 被引次数: 0
出版历程
  • 收稿日期:  2008-10-17
  • 修回日期:  2008-11-03
  • 刊出日期:  2009-05-20

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