搜索

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

CdTe太阳电池前电极SnO2:F/SnO2复合薄膜性能分析

曾广根 黎兵 郑家贵 武莉莉 张静全 雷智 李卫 冯良桓

引用本文:
Citation:

CdTe太阳电池前电极SnO2:F/SnO2复合薄膜性能分析

曾广根, 黎兵, 郑家贵, 武莉莉, 张静全, 雷智, 李卫, 冯良桓

Performance of SnO2:F/SnO2 composite film as front-electrode for CdTe solar cells

Zeng Guang-Gen, Li Bing, Zheng Jia-Gui, Wu Li-Li, Zhang Jing-Quan, Lei Zhi, Li Wei, Feng Liang-Huan
PDF
导出引用
  • 减薄CdS窗口层是提高CdS/CdTe太阳电池转换效率的有效途径之一,减薄窗口层会对器件造成不利的影响,因此在减薄了的窗口层与前电极之间引入过渡层非常必要.利用反应磁控溅射法在前电极SnO2:F薄膜衬底上制备未掺杂的SnO2薄膜形成过渡层,并将其在N2/O2=4 ∶1,550 ℃环境进行了30 min热处理,利用原子力显微镜、X射线衍射仪、紫外分光光度计对复合薄膜热处理前后的形貌、结构、光学性能进行了表征,同时分析了复
    Decreasing CdS thickness is one of the effective ways to improve the conversion efficiency of CdS/CdTe solar cells. In order to eliminate the adverse effects of the decrease in CdS thickness on the performances of the devices, it is necessary to introduce a buffer layer between CdS and front electrode layer. The un-doped SnO2thin films, as a buffer layer, were deposited on SnO2:F thin film by magnetic reactive sputtering. Then the composite film was annealed at 550 ℃ in N2/O2=4 ∶1 ambience for 30 minutes. The morphology, structure and optical properties of the composite film before and after annealing were studied by AFM, XRD, UV-Vis and the electrical properties were analyzed, respectively. As a result, the crystal lattice parameters of un-doped SnO2 films matched those of the substrate, so the un-doped SnO2 films, which had an obvious preferred orientation along (110) plan, had the same structure as the substrate materials. This implied that there was no lattice mismatch. After annealing, the surface topography and electricity uniformity were improved, higher than 80% transparency was obtained, and resistance increased to meet the requirements of the buffer layers. Finally, continuous and homogeneous SnO2:F/ SnO2 composite thin films have been obtained, which were very suitable for CdS/CdTe cells.
    • 基金项目: 国家高技术研究与发展计划(批准号:2001AA513010)、国家自然科学基金(批准号:60506004)和四川大学青年科学基金(批准号:2008003)资助的课题.
    [1]

    Zeng G G, Zheng J G, Li B, Lei Z, Wu L L, Cai Y P, Li W, Zhang J Q, Cai W, Feng L H 2006 Acta Phys. Sin. 55 4854 (in Chinese) [曾广根、郑家贵、黎 兵、雷 智、武莉莉、蔡亚平、李 卫、张静全、蔡 伟、冯良桓 2006 物理学报 55 4854]

    [2]

    Wu X, Keane J C, Dhere R G, DeHart C, Albin D S, Duda A, Gessert T A, Asher S, Levi D H, Sheldon P 2001 Proceedings of 17th European Photovoltaic Solar Energy Conference Munich, Germany, October 22—26, 2001 p995

    [3]

    Spence W 1967 J. Appl. Phys. 38 3767

    [4]

    Philips H M, Li Y J, Bi Z Q 1996 Appl. Phys. A 63 347

    [5]

    Shanthi S, Subramanian C, Ramasamy P 1999 Crystal Growth 197 858

    [6]

    Jarzebski Z M, Martom J P 1976 Electrochem. Soc. 123 299

    [7]

    Tominagaa K, Takaoa T, Fukushima A 2002 Vacuum 66 505

    [8]

    Yan Y F, Jones K M, Wu X 2003 Materials Research Society Symposium-Proceedings 763 119

    [9]

    Alamri 2002 Jpn. J. Appl. Phys. 41 1052

    [10]

    Chung W Y, Lim J W 2003 Curr. Appl. Phys. 3 413

    [11]

    Ramirez M A, Cilense M, Bueno P R, Longo E, Varela J A 2009 J. Phys. D: Appl. Phys. 42 015503

    [12]

    Kilic C, Zunger A 2002 Phys. Rev. Lett. 88 095501

    [13]

    Veluchamy P, Tsuji M, Nishio T 2001 Solar Energy Mater. Solar Cells 67 179

    [14]

    Dinh N N, Bernard M C, Goff A H L 2006 Comptes Rendus Chimie 9 676

    [15]

    Li X N, Bai M, Pankow J, Asher S E, Moutinho H, Gessert T 2007 Materials Research Society Symposium Proceedings San Francisco, California, USA, April 9—13, 2007 p51

    [16]

    Du J, Ji Z G 2007 Acta Phys. Sin. 56 2388 (in Chinese) [杜 鹃、季振国 2007 物理学报 56 2388]

    [17]

    Zhao Z X, Zhu G Y 2008 Surf. Interfac. Anal. 40 67

    [18]

    Gorley P M, Khomyak V V 2005 Mater. Sci. Engng. B 118 160

    [19]

    Nishimura E, Song P K, Shigesato Y, Utsumi K, Ligusa H 2005 J. Vacuum Sci. Technol. A 23 1167

  • [1]

    Zeng G G, Zheng J G, Li B, Lei Z, Wu L L, Cai Y P, Li W, Zhang J Q, Cai W, Feng L H 2006 Acta Phys. Sin. 55 4854 (in Chinese) [曾广根、郑家贵、黎 兵、雷 智、武莉莉、蔡亚平、李 卫、张静全、蔡 伟、冯良桓 2006 物理学报 55 4854]

    [2]

    Wu X, Keane J C, Dhere R G, DeHart C, Albin D S, Duda A, Gessert T A, Asher S, Levi D H, Sheldon P 2001 Proceedings of 17th European Photovoltaic Solar Energy Conference Munich, Germany, October 22—26, 2001 p995

    [3]

    Spence W 1967 J. Appl. Phys. 38 3767

    [4]

    Philips H M, Li Y J, Bi Z Q 1996 Appl. Phys. A 63 347

    [5]

    Shanthi S, Subramanian C, Ramasamy P 1999 Crystal Growth 197 858

    [6]

    Jarzebski Z M, Martom J P 1976 Electrochem. Soc. 123 299

    [7]

    Tominagaa K, Takaoa T, Fukushima A 2002 Vacuum 66 505

    [8]

    Yan Y F, Jones K M, Wu X 2003 Materials Research Society Symposium-Proceedings 763 119

    [9]

    Alamri 2002 Jpn. J. Appl. Phys. 41 1052

    [10]

    Chung W Y, Lim J W 2003 Curr. Appl. Phys. 3 413

    [11]

    Ramirez M A, Cilense M, Bueno P R, Longo E, Varela J A 2009 J. Phys. D: Appl. Phys. 42 015503

    [12]

    Kilic C, Zunger A 2002 Phys. Rev. Lett. 88 095501

    [13]

    Veluchamy P, Tsuji M, Nishio T 2001 Solar Energy Mater. Solar Cells 67 179

    [14]

    Dinh N N, Bernard M C, Goff A H L 2006 Comptes Rendus Chimie 9 676

    [15]

    Li X N, Bai M, Pankow J, Asher S E, Moutinho H, Gessert T 2007 Materials Research Society Symposium Proceedings San Francisco, California, USA, April 9—13, 2007 p51

    [16]

    Du J, Ji Z G 2007 Acta Phys. Sin. 56 2388 (in Chinese) [杜 鹃、季振国 2007 物理学报 56 2388]

    [17]

    Zhao Z X, Zhu G Y 2008 Surf. Interfac. Anal. 40 67

    [18]

    Gorley P M, Khomyak V V 2005 Mater. Sci. Engng. B 118 160

    [19]

    Nishimura E, Song P K, Shigesato Y, Utsumi K, Ligusa H 2005 J. Vacuum Sci. Technol. A 23 1167

  • [1] 陆杨丹, 吕建国, 杨汝琪, 陆波静, 朱丽萍, 叶志镇. 透明导电ZnO:Al/Cu网格复合膜及其电加热性能. 物理学报, 2022, 71(18): 187304. doi: 10.7498/aps.71.20220529
    [2] 黄立静, 任乃飞, 李保家, 周明. 激光辐照对热退火金属/掺氟二氧化锡透明导电薄膜光电性能的影响. 物理学报, 2015, 64(3): 034211. doi: 10.7498/aps.64.034211
    [3] 刘芳芳, 孙云, 何青. Ga梯度分布对Cu(In,Ga)Se2薄膜及太阳电池的影响. 物理学报, 2014, 63(4): 047201. doi: 10.7498/aps.63.047201
    [4] 刘芳芳, 何青, 周志强, 孙云. Cu元素对Cu(In, Ga)Se2薄膜及太阳电池的影响. 物理学报, 2014, 63(6): 067203. doi: 10.7498/aps.63.067203
    [5] 王利, 张晓丹, 杨旭, 魏长春, 张德坤, 王广才, 孙建, 赵颖. 高绒度掺硼氧化锌透明导电薄膜用作非晶硅太阳电池前电极的研究. 物理学报, 2014, 63(2): 028801. doi: 10.7498/aps.63.028801
    [6] 陈明, 周细应, 毛秀娟, 邵佳佳, 杨国良. 外加磁场对射频磁控溅射制备铝掺杂氧化锌薄膜影响的研究. 物理学报, 2014, 63(9): 098103. doi: 10.7498/aps.63.098103
    [7] 李愿杰, 郑家贵, 冯良桓, 黎兵, 曾广根, 蔡亚平, 张静全, 李卫, 雷智, 武莉莉, 蔡伟. 不同温度下制备的CdTe薄膜对太阳电池光电性能的影响. 物理学报, 2010, 59(1): 625-629. doi: 10.7498/aps.59.625
    [8] 黎兵, 刘才, 冯良桓, 张静全, 郑家贵, 蔡亚平, 蔡伟, 武莉莉, 李卫, 雷智, 曾广根, 夏庚培. CdS/CdTe薄膜太阳电池的深能级瞬态谱和光致发光研究. 物理学报, 2009, 58(3): 1987-1991. doi: 10.7498/aps.58.1987
    [9] 蔡亚平, 李卫, 冯良桓, 黎兵, 蔡伟, 雷智, 张静全, 武莉莉, 郑家贵. 化学水浴法制备大面积CdS薄膜及其光伏应用. 物理学报, 2009, 58(1): 438-443. doi: 10.7498/aps.58.438
    [10] 陈兆权, 刘明海, 刘玉萍, 陈伟, 罗志清, 胡希伟. PECVD制备AZO(ZnO:Al)透明导电薄膜. 物理学报, 2009, 58(6): 4260-4266. doi: 10.7498/aps.58.4260
    [11] 吴臣国, 沈杰, 李栋, 马国宏. 掺钼ZnO透明导电薄膜的太赫兹电磁波传输性质. 物理学报, 2009, 58(12): 8623-8629. doi: 10.7498/aps.58.8623
    [12] 宋慧瑾, 郑家贵, 冯良桓, 蔡 伟, 蔡亚萍, 张静全, 李 卫, 黎 兵, 武莉莉, 雷 智, 鄢 强. CdTe太阳电池的不同背电极和背接触层的特性研究. 物理学报, 2007, 56(3): 1655-1661. doi: 10.7498/aps.56.1655
    [13] 贺剑雄, 郑家贵, 李 卫, 冯良桓, 蔡 伟, 蔡亚平, 张静全, 黎 兵, 雷 智, 武莉莉, 王文武. CdTe薄膜太阳电池背接触的研究. 物理学报, 2007, 56(9): 5548-5553. doi: 10.7498/aps.56.5548
    [14] 张晓丹, 赵 颖, 高艳涛, 陈 飞, 朱 锋, 魏长春, 孙 建, 耿新华, 熊绍珍. 提高微晶硅薄膜太阳电池效率的研究. 物理学报, 2006, 55(12): 6697-6700. doi: 10.7498/aps.55.6697
    [15] 曾广根, 郑家贵, 黎 兵, 雷 智, 武莉莉, 蔡亚平, 李 卫, 张静全, 蔡 伟, 冯良桓. 具有高阻抗本征SnO2过渡层的CdS/CdTe多晶薄膜太阳电池. 物理学报, 2006, 55(9): 4854-4859. doi: 10.7498/aps.55.4854
    [16] 杨学文, 郑家贵, 张静全, 冯良桓, 蔡 伟, 蔡亚平, 李 卫, 黎 兵, 雷 智, 武莉莉. CdTe/CdS太阳电池I-V,C-V特性研究. 物理学报, 2006, 55(5): 2504-2507. doi: 10.7498/aps.55.2504
    [17] 徐炜炜, 戴松元, 方霞琴, 胡林华, 孔凡太, 潘 旭, 王孔嘉. 电沉积处理与染料敏化纳米薄膜太阳电池的优化. 物理学报, 2005, 54(12): 5943-5948. doi: 10.7498/aps.54.5943
    [18] 戴松元, 孔凡太, 胡林华, 史成武, 方霞琴, 潘 旭, 王孔嘉. 染料敏化纳米薄膜太阳电池实验研究. 物理学报, 2005, 54(4): 1919-1926. doi: 10.7498/aps.54.1919
    [19] 曾隆月, 戴松元, 王孔嘉, 史成武, 孔凡太, 胡林华, 潘 旭. 染料敏化纳米ZnO薄膜太阳电池机理初探. 物理学报, 2005, 54(1): 53-57. doi: 10.7498/aps.54.53
    [20] 程珊华, 宁兆元, 黄峰. 等离子体增强反应蒸发沉积的氟掺杂氧化铟薄膜的性质. 物理学报, 2002, 51(3): 668-673. doi: 10.7498/aps.51.668
计量
  • 文章访问数:  6599
  • PDF下载量:  681
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-09-02
  • 修回日期:  2009-11-30
  • 刊出日期:  2010-05-05

/

返回文章
返回