-
本文用反射式高能电子衍射(RHEED)强度振荡研究了不同生长温度下Si(111)分子束外延的生长动力学过程,生长温度高于520℃(生长速率约0.15?/S)时,Si(111)外延为“台阶流”生长模式,生长温度低于475℃时,外延为“二维成核”双原子层生长模式,在较低温,甚至室温时,其外延仍为双原子层模式,但是镜向弹性散射束振荡和非弹性散射束振荡的叠加会造成RHEED强度在生长的最初阶段出现“类单原子层”模式的振荡特性。The growth dynamical processes of Si(111) molecular beam epitaxy under different growth temperature are studied by RHEED intensity oscillations. The Si(lll) epilayer grew in a "step flow" mode at the temperature above 520℃(growth rate 0.02 nm/s), and in a "2D nucleation" bilayer mode at temperature range between 520℃ and 420℃. Below 380℃, even at room temperature, the growth is still in a bilayer mode. The RHEED intensity oscillation shows a monoatomic layer mode during the initial stage of growth, which is believed due to the superposition of two kinds of oscillations originated from coherent elastically scattering and incoherent scattetring or surface diffuse scattering.
计量
- 文章访问数: 5336
- PDF下载量: 677
- 被引次数: 0