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利用Born近似可以计算高能电子与原子或离子碰撞激发的微分截面和总截面。微分截面正比于广义振子强度。电子碰撞过程可将靶原子或离子激发到无数个束缚态以及相应的连续态。量子亏损理论能够统一处理这些激发态;因此可定义广义振子强度密度——即每单位激发能内的广义振子强度。我们计算了Li的等电子系列Li,Be+,B++,C3+,Ne7+,Na8+,K16+等从基态到S,P,D,F通道的激发的广义振子强度密度,总结了类Li等电子系列离子的广义振子强度密度的标度关系。The differential cross section and total cross section of high-energy electron impact excitation can be calculated by Born approximation. The differential cross section is propotional to the so called generalized oscillator strength. The target atom or ion may be excited to infinite number of bound states and adjoint continuum states which can be treated in an unified manner by Quantum Defect Theory. Thus, we define generalized oscillator strength density (GOSD) as the generalized oscillator strength per unit of excitation energy. We have calculated the GOSD's of the lithium-like isoelectronic se-quence(Li, Be+, B++, C3+, Ne7+, Na8+, K16+) for excitation from the ground state to S, P, D and F channels. The scaling relation along isoelectronic sequence is discussed.
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