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用Xe离子注入作扩散标记,确定了TiSi2薄膜形成过程中主要扩散元素是Si。应用Kidson和Tu推导的方程根据试验结果计算了600℃退火TiSi2形成中Si和Ti的扩散系数。By means of Xe ion implantation as a diffusion marker, we have deterinined that Si is the dominant diffusion element in the formation of TiSi2 thin film. Applying the equation of Kioson and Tu with the result of our experiment, diffusion coefficients of Si and Ti in forming TiSi2 at 600℃ has been calculated.
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