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用直流磁控溅射法在(100)LaAlO3衬底上制备了La0.9Sr0.1MnO3薄膜.经退火处理后薄膜的原子力显微镜形貌观测和X射线衍射分析显示具有比较好的质量.电阻率-温度关系表明La0.9Sr0.1MnO3薄膜在281 K处发生金属绝缘体转变.电流在0.01—4 mA范围内,薄膜的峰值电阻率随电流增大而减小,在4 mA下获得了30.5%的峰值电阻率变
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关键词:
- 掺杂锰氧化合物 /
- La0.9Sr0.1MnO3薄膜 /
- 电流诱导效应 /
- 相分离理论
La0.9Sr0.1MnO3 film has been fabricated on (100) LaAlO3 by direct-current magnetron sputtering. The quality of the film is good as monitored by atom force microscopy and X-ray diffraction. The resistivity-temperature curve shows that the film undergoes metal-insulator transition at 281 K. The peak resistivity decreases with increasing current and the current-induced electro-resistance is 30.5% at 4 mA. The results are simply explained by phase-separation theory.
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