衬底加温和后续热退火法形成纳米硅晶粒成核势垒的比较

邓泽超; 罗青山; 褚立志; 丁学成; 梁伟华; 傅广生; 王英龙

doi:10.7498/aps.59.4802

摘要

在真空环境中,采用脉冲激光烧蚀技术,分别在衬底加温和室温条件下沉积制备了纳米Si薄膜.对在室温条件下制备得到的非晶Si薄膜,采用后续热退火实现其晶化.通过扫描电子显微镜、Raman散射仪和X射线衍射仪对制备的薄膜形貌、晶态成分进行表征,得到两种情况下纳米Si晶粒形成的阈值温度分别为700 ℃和850 ℃,通过定量计算比较了两种情况下晶粒成核势垒的大小,并从能量角度对阈值温度的差别进行了理论分析.

关键词:

In vacuum environment, the nano-crystalline silicon films were prepared by pulsed laser ablation at high temperature and room temperature respectively. The amorphous films prepared under normal temperature were thermal-annealed, which leads to crystallization. The morphology and compositon etc. of the samples were characterized by scanning electron microscopy, Raman scattering and X-ray diffraction. The results showed that the temperature threshold of Si nanoparticles formation was 700 ℃ and 850 ℃ respectively. The nucleation energy of the nanoparticles was obtained by quantitative calculation, and the reason of difference between the temperature threshold was discussed from the point of view of energy.

Keywords:

作者及机构信息

1.
河北大学物理科学与技术学院,河北省光电信息材料重点实验室,保定 071002

基金项目: 国家自然科学基金(批准号:10774036)、河北省自然科学基金(批准号: E2008000631)和河北大学博士启动基金(批准号: Y2007100)资助的课题.

Authors and contacts

1.
Key Laboratory of Photo-Electricity Information Materials of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding 071002,China

参考文献

[1]	Osborne I S 2002 Science 296 2299
[2]	Qiu S H, Chen C Z, Liu C Q, Wu Y D, Li P, Lin X Y, Yu C Y 2009 Acta Phys. Sin. 58 565 (in Chinese )[邱胜桦、陈城钊、刘翠青、吴燕丹、李平、林璇英、余楚迎 2009 物理学报 58 565]
[3]	Lee H S, Choi S, Kim S W 2009 Thin Solid Films 517 4070
[4]	Her Y C, Wu C L 2004 J. Appl. Phys. 96 5563
[5]	Wang Y L, Zhou Y, Chu L Z, Fu G S, Peng Y C 2005 Acta Phys. Sin. 54 1683 (in Chinese) [王英龙、周阳、褚立志、傅广生、彭英才 2005 物理学报 54 1683]
[6]	Wang Y L, Deng Z C, Fu G S, Zhou Y, Chu L Z, Peng Y C 2006 Thin Solid Films 515 1897
[7]	Wang Y L, Li Y L, Fu G S 2006 Nucl. Instrum. Meth. B 252 245
[8]	Fu G S, Wang Y L, Chu L Z, Zhou Y, Yu W 2005 Europhys. Lett. 69 758
[9]	Chu L Z, Lu L F, Wang Y L, Fu G S 2007 Acta Phys. Sin. 56 3374 (in Chinese) [褚立志、卢丽芳、王英龙、傅广生2007 物理学报 56 3374]
[10]	Ossadnik C, Veprek S, Gregora I 1999 Thin Solid Films 337 148
[11]	Wang Y L, Deng Z C, Chu L Z, Fu G S, Peng Y C 2009 Europhys. Lett. 86 15001

施引文献

[1]	Osborne I S 2002 Science 296 2299
[2]	Qiu S H, Chen C Z, Liu C Q, Wu Y D, Li P, Lin X Y, Yu C Y 2009 Acta Phys. Sin. 58 565 (in Chinese )[邱胜桦、陈城钊、刘翠青、吴燕丹、李平、林璇英、余楚迎 2009 物理学报 58 565]
[3]	Lee H S, Choi S, Kim S W 2009 Thin Solid Films 517 4070
[4]	Her Y C, Wu C L 2004 J. Appl. Phys. 96 5563
[5]	Wang Y L, Zhou Y, Chu L Z, Fu G S, Peng Y C 2005 Acta Phys. Sin. 54 1683 (in Chinese) [王英龙、周阳、褚立志、傅广生、彭英才 2005 物理学报 54 1683]
[6]	Wang Y L, Deng Z C, Fu G S, Zhou Y, Chu L Z, Peng Y C 2006 Thin Solid Films 515 1897
[7]	Wang Y L, Li Y L, Fu G S 2006 Nucl. Instrum. Meth. B 252 245
[8]	Fu G S, Wang Y L, Chu L Z, Zhou Y, Yu W 2005 Europhys. Lett. 69 758
[9]	Chu L Z, Lu L F, Wang Y L, Fu G S 2007 Acta Phys. Sin. 56 3374 (in Chinese) [褚立志、卢丽芳、王英龙、傅广生2007 物理学报 56 3374]
[10]	Ossadnik C, Veprek S, Gregora I 1999 Thin Solid Films 337 148
[11]	Wang Y L, Deng Z C, Chu L Z, Fu G S, Peng Y C 2009 Europhys. Lett. 86 15001

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