Sol-gel法制备Bi0.85Nd0.15FeO3多铁性薄膜

郭冬云; 李超; 王传彬; 沈强; 张联盟; Tu Rong; Goto Takashi

doi:10.7498/aps.59.5772

摘要

利用sol-gel法在Pt/Ti/SiO2/Si衬底上制备出Bi0.85Nd0.15FeO3薄膜.研究退火温度对其晶相形成的影响,发现在450 ℃退火时,Bi0.85Nd0.15FeO3晶相开始形成,但是结晶较差,而且存在杂相;在500—600 ℃退火可以获得单相Bi0.85Nd0.15FeO3薄膜,退火温度升高有利于其结晶.对600 ℃退火的Bi0.85Nd0.15FeO3薄膜的介电、铁电和电磁性能进行了测试.在测试频率为1 MHz时,其介电常数和介电损耗分别为145,0.032;饱和磁化强度大约为44.8 emu/cm3;剩余极化值(2Pr)大约是16.6 μC/cm2.

关键词:

Abstract

The Bi0.85Nd0.15FeO3 thin films were prepared on the Pt/Ti/SiO2/Si substrates by Sol-gel method.The effect of annealing temperature on formation of Bi0.85Nd0.15FeO3 phase was investigated. It was found that the Bi0.85Nd0.15FeO3 phase was formed and coexisted with the impurity phase when the films annealed at 450 ℃. The single-phase Bi0.85Nd0.15FeO3 films were obtained,when they were annealed at 500—600 ℃. Bi0.85Nd0.15FeO3 films annealed at 600 ℃ had saturated magnetization about 44.8 emu/cm3, remnant polarization (2Pr) about 16.6 μC/cm2,dielectric constant 145 and dielectric loss 0.032(1 MHz), respectively.

Keywords:

作者及机构信息

(1)Institute for Materials Research,Tohoku University,Sendai 980-8577,Japan; (2)武汉理工大学材料科学与工程学院,材料复合新技术国家重点实验室,武汉 430070; (3)武汉理工大学材料科学与工程学院,材料复合新技术国家重点实验室,武汉 430070; Institute for Materials Research,Tohoku University,Sendai 980-8577,Japan

基金项目: 中国科学技术部国际科技合作计划(批准号: 2009DFB50470),国家自然科学基金青年科学基金(批准号: 50902108)资助的课题.

Authors and contacts

(1)Institute for Materials Research,Tohoku University,Sendai 980-8577,Japan; (2)State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China; (3)State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China; Institute for Materials Research,Tohoku University,Sendai 980-8577,Ja

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施引文献

[1]	Hur N, Park S, Sharma P A, Ahn J S, Guha S, Cheong S W 2004 Nature 429 392
[2]	Zheng H, Wang J, Lofland S E, Ma Z, Mohaddes-Ardabili, Zhao T, Salamanca-Riba L, Shinde S R, Ogale S B, Bai F, Viehland D, Jia Y, Schlom D G, Wuttig M, Roytburd A, Ramesh R 2004 Science 303 661
[3]	Klmura T, Goto T, Shintani H, Ishizaka K, Arima T, Tokura Y 2003 Nature 426 6962
[4]	Eerenstein W, Mathur N D, Scott J F 2006 Nature 442 759
[5]	Hemberger J, Lunkenheimer P, Fichti R, Krug H, Tsurkan V, Loidl A 2005 Nature 434 364
[6]	Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M, Ramesh R 2003 Science 299 1719
[7]	Kornev I A, Lisenkov S, Haumont R, Dkhil B, Bellaiche L 2007 Phys. Rev. Lett. 99 227602
[8]	Neaton J B, Ederer C, Waghmare U V, Spaldin N A, Rabe K M 2005 Phys. Rev. B71 014113
[9]	Bea H, Bibes M, Ott F, Dupe B, Zhu X H, Petit S, Fusil S, Deranlot C, Bouzehouane K, Barthelemy A 2008 Phys. Rev. Lett. 100 017204
[10]	Ravindran P, Vidya R, Kjekshus A, Fjellvag H, Eriksson O 2006 Phys. Rev. B74 224412
[11]	Palkar V R, Kundaliya D C, Malik S K 2003 J. Appl. Phys. 93 4337
[12]	Sun Y, Huang Z, Fan H, Ming X, Wang C, Chen G 2009 Acta. Phys. Sin. 58 0193 (in Chinese) [孙源、黄祖飞、范厚刚、明星,王春忠、陈岗 2009 物理学报 58 193]
[13]	Singh S, Menou N, Funakubo H, Maruyama K, Ishiwara H 2007 Appl. Phys. Lett. 90 242914
[14]	Khomchenko V, Kiselev D, Bdikin I, Shvartsman V, Borisov P, Kleemann W, Vieira J, Kholkin A 2008 Appl. Phys. Lett. 93 262905
[15]	Wang Y, Nan C 2006 Appl. Phys. Lett. 89 052903
[16]	Das S R, Bhattacharya P, Choudhary N, Katiyar R 2006 J. Appl. Phys. 99 066107
[17]	Lee D, Kim M G, Ryu S, Jang H 2005 Appl. Phys. Lett. 86 222903
[18]	Yuan G L, Or S W 2006 J. Appl. Phys. 100 024109
[19]	Yan Z, Wang K F, Qu J F, Wang Y, Song Z T, Feng S L 2007 Appl. Phys. Lett. 91 082906
[20]	Huang F Z, Lu X M, Lin W, Wu X M, Yi K, Zhu J S 2006 Appl. Phys. Lett. 89 242914
[21]	Liu H R, Liu Z L, Liu Q, Yao K L 2006 Thin Solid Films 500 105
[22]	Kim J K, Kim S S, Kim W J 2005 Mater. Lett. 59 4006
[23]	Ghosh S, Dasgupta S, Sen A, Maiti H S 2005 Mater. Res. Bull. 40 2073
[24]	Wei J, Xue D, Wu C, Li Z X 2008 J. Alloys and Comp. 453 20
[25]	Gao F, Cai C, Wang Y, Dong S, Qiu X Y, Yuan G L, Liu Z G, Liu J M 2006 J. Appl. Phys. 99 094105
[26]	Guo D, Wang Y, Yu J, Gao J, Li M 2006 Acta Phys. Sin. 55 5551 (in Chinese) [郭冬云、王耘波、于军、高俊雄、李美亚 2006 物理学报 55 5551]
[27]	Guo D Y, Li M Y, Pei L, Yu B F, Wu G Z, Zhao X Z, Wang Y B, Yu J 2007 Sci. China Ser. E-Tech. Sci. 50 1

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