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利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/In x Ga1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有In x Ga1-xAs组分渐变缓冲段的InAs/In x Ga1-x
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关键词:
- 纳米线异质结构 /
- InxGa1-xAs /
- 组分渐变缓冲层 /
- 金属有机化学气相沉淀法
InAs/GaAs and InAs/In xGa1-xAs/GaAs nanowire heterostructures are grown by metal organic chemical vapor deposition via Au-assistant vapor-liquid-solid mechanism. We find that the InAs nanowires grow directly on GaAs nanowires in a random way, or they grow along the sidewall of the GaAs nanowires, and thet InAs nanowires grow vertically on GaAs nanowires by using an In x Ga1-xAs (0≤x≤1) buffer segment. It can be concluded that the influences of crystal lattice mismatch and difference in interfacial energy can be eliminated by inserting a ternary compound semiconductor buffer segment, thereby improving the crystal quality and the capability to control the growth of nanowire heterostructure.-
Keywords:
- nanowire heterostructure /
- In x Ga1-xAs /
- buffer segment /
- metal organic chemical vapor deposition
[1] Huang Y, Duan X, Cui Y, Lauhon L J, Kim K H, Lieber C M 2001 Science 294 1313
[2] Bryllert T, Wernersson L E, Lowgren T, Samuelson L 2006 Nanotechnol. 17 S227
[3] Li Y, Qian F, Xiang J, Lieber C M 2006 Mater. Today 9 18
[4] Wagner R S, Ellis W C 1964 Appl. Phys. Lett. 4 89
[5] Givargizov E I 1975 J. Cryst. Growth 31 20
[6] Yan R X, Gargas D, Yang P D 2009 Nat. Photonics 3 569
[7] Joyce H J, Gao Q, Tan H H, Jagadish C, Kim Y, Fickenscher M A, Perera S, Hoang T B, Smith L M, Jackson H E, Yarrison-Rice J M, Zhang X, Zou J 2009 Nano Lett. 9 695
[8] Guo Y N, Zou J, Paladugu M, Wang H, Gao Q, Tan H H, Jagadish C 2006 Appl. Phys. Lett. 89 231917
[9] Svensson C P T, Mrtensson T, Tragrdh J, Larsson C, Rask M, Hessman D, Samuelson L, Ohlsson J 2008 Nanotechnol. 19 305201
[10] Paladugu M, Zou J, Guo Y N, Auchterlonie G J, Joyce H J, Gao Q, Tan H H, Jagadish C, Kim Y 2007 Small 4 1873
[11] Paladugu M, Zou J, Guo Y N, Zhang X, Kim Y, Joyce H J, Gao Q, Tan H H, Jagadish C 2008 Appl. Phys. Lett. 93 101911
[12] Cirlin G E, Dubrovskii V G, Soshnikov I P, Sibirev N V, Samsonenko Y B, Bouravleuv A D, Harmand J C, Glas F 2009 Phys. Status Solidi Rapid Re.Lett. 3 112
[13] Chuang L C, Moewe M, Crankshaw S, Chase C, Kobayashi N P, Chang H C 2007 Appl. Phys. Lett. 90 043115
[14] Seifert W, Borgstrm M, Deppert K, Dick K A, Johansson J, Larsson M W, Mrtensson T, Skld N, Svensson C P T, Wacaser B A, Wallenberg L R, Samuelson L 2004 J. Cryst. Growth 272 211
[15] Ye X, Huang H, Guo J W , Ren X M, Huang Y Q, Wang Q 2010 Journal of Semiconductors 31 073001
[16] Park H D, Prokes S M, Cammarata R C 2005 Appl. Phys. Lett. 87 063110
[17] Pugh J H, Williams R S 1986 J. Mater. Res. 1 343
[18] Ren X M, Huang H, Ye X, Yang Y S, Wang Q, Huang Y Q, Zhang X 2009 17th International Symposium Nanostructures: Physics and Technology, Belarus, Minsk, June 22—26 2009 p121
[19] Huang H, Ren X M, Ye X, Guo J W , Wang Q, Yang Y S, Cai S W, Huang Y Q 2010 Nano Lett. 10 64
[20] Ye X, Huang H, Ren X M, Yang Y S, Guo J W , Huang Y Q, Wang Q 2010 Chin. Phys. Lett. 27 046101
[21] Koguchi M, Kakibayashi H, Yazawa M, Hiruma K, Katsuyama T, 1992 Jpn. J. Appl. Phys. Pt. 1 31 2061
[1] Huang Y, Duan X, Cui Y, Lauhon L J, Kim K H, Lieber C M 2001 Science 294 1313
[2] Bryllert T, Wernersson L E, Lowgren T, Samuelson L 2006 Nanotechnol. 17 S227
[3] Li Y, Qian F, Xiang J, Lieber C M 2006 Mater. Today 9 18
[4] Wagner R S, Ellis W C 1964 Appl. Phys. Lett. 4 89
[5] Givargizov E I 1975 J. Cryst. Growth 31 20
[6] Yan R X, Gargas D, Yang P D 2009 Nat. Photonics 3 569
[7] Joyce H J, Gao Q, Tan H H, Jagadish C, Kim Y, Fickenscher M A, Perera S, Hoang T B, Smith L M, Jackson H E, Yarrison-Rice J M, Zhang X, Zou J 2009 Nano Lett. 9 695
[8] Guo Y N, Zou J, Paladugu M, Wang H, Gao Q, Tan H H, Jagadish C 2006 Appl. Phys. Lett. 89 231917
[9] Svensson C P T, Mrtensson T, Tragrdh J, Larsson C, Rask M, Hessman D, Samuelson L, Ohlsson J 2008 Nanotechnol. 19 305201
[10] Paladugu M, Zou J, Guo Y N, Auchterlonie G J, Joyce H J, Gao Q, Tan H H, Jagadish C, Kim Y 2007 Small 4 1873
[11] Paladugu M, Zou J, Guo Y N, Zhang X, Kim Y, Joyce H J, Gao Q, Tan H H, Jagadish C 2008 Appl. Phys. Lett. 93 101911
[12] Cirlin G E, Dubrovskii V G, Soshnikov I P, Sibirev N V, Samsonenko Y B, Bouravleuv A D, Harmand J C, Glas F 2009 Phys. Status Solidi Rapid Re.Lett. 3 112
[13] Chuang L C, Moewe M, Crankshaw S, Chase C, Kobayashi N P, Chang H C 2007 Appl. Phys. Lett. 90 043115
[14] Seifert W, Borgstrm M, Deppert K, Dick K A, Johansson J, Larsson M W, Mrtensson T, Skld N, Svensson C P T, Wacaser B A, Wallenberg L R, Samuelson L 2004 J. Cryst. Growth 272 211
[15] Ye X, Huang H, Guo J W , Ren X M, Huang Y Q, Wang Q 2010 Journal of Semiconductors 31 073001
[16] Park H D, Prokes S M, Cammarata R C 2005 Appl. Phys. Lett. 87 063110
[17] Pugh J H, Williams R S 1986 J. Mater. Res. 1 343
[18] Ren X M, Huang H, Ye X, Yang Y S, Wang Q, Huang Y Q, Zhang X 2009 17th International Symposium Nanostructures: Physics and Technology, Belarus, Minsk, June 22—26 2009 p121
[19] Huang H, Ren X M, Ye X, Guo J W , Wang Q, Yang Y S, Cai S W, Huang Y Q 2010 Nano Lett. 10 64
[20] Ye X, Huang H, Ren X M, Yang Y S, Guo J W , Huang Y Q, Wang Q 2010 Chin. Phys. Lett. 27 046101
[21] Koguchi M, Kakibayashi H, Yazawa M, Hiruma K, Katsuyama T, 1992 Jpn. J. Appl. Phys. Pt. 1 31 2061
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