钯金属吸附对半导体性碳纳米管电输运的影响

赵华波; 王亮; 张朝晖

doi:10.7498/aps.60.087302

摘要

利用物理蒸发技术,在半导体性的碳纳米管上沉积钯金属,利用导电原子力显微镜检测钯吸附对碳纳米管电输运的影响.结果表明:沉积的钯在碳纳米管上形成纳米颗粒,随着钯颗粒密度的增加,半导体性碳纳米管逐渐向金属性转变.利用第一性原理计算了吸附有钯原子的半导体性单壁碳纳米管的能带结构.研究发现,钯的覆盖率越高,其禁带宽度越窄,直至为零,定性说明了实验结果的合理性.

关键词:

The metal Pd is deposited on semiconducting single-walled carbon nanotubes (SWNTs) by physical vapor deposition. The image of scanning electron microscopy shows that the Pd nanoparticles (10—30 nm) are formed on the carbon nanotubes. It is found by the conductive atomic force microscopy that with the increase of Pd nanoparticles, the semiconducting carbon nanotube is changed gradually into a metallic one. Furthermore, our density functional theory calculation demonstrates that with the Pd adsorption increasing the band gap of the SWNT becomes smaller, and eventually disappears, which is in good agreement with the experimental result.

Keywords:

作者及机构信息

1.
北京大学物理学院,人工微结构与介观物理国家重点实验室,北京 100871

基金项目: 国家自然科学基金(批准号:90406007,10434010)和国家重点基础研究发展计划 (批准号:2007CB936804)资助的课题.

Authors and contacts

1.
State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

参考文献

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[19]	Purewal M S, Hong B H, Ravi A, Chandra B, Hone J, Kim P 2007 Phys. Rev. Lett. 9 2568
[20]	Durgun E, Dag S, Bagci V M K, Gulseren O, Yildirim T, Ciraci S 2003 Phys. Rev. B 67 201401R
[21]	Yagi Y, Briere T M, Sluiter M H F, Kumar V, Farajian A A, Kawazoe Y 2004 Phys. Rev. B 69 075414

施引文献

[1]	Quinn B M, Dekker C, Lemay S G 2005 J. Am. Chem. Soc. 127 6146
[2]	Kim Y T, Ohshima K, Higashimine K, Uruga T, Takata M, Suematsu H, Mitani T 2006 Angew Chem. Int. Ed. 45 407
[3]	Wildgoose G G, Banks C E, Compton R G 2006 Small 2 182
[4]	Ciraci S, Dag S, Yildirim T, Gülseren O, Senger R T 2004 J. Phys.: Condens. Matter 16 R901
[5]	Qu L T, Dai L M, Osawa E 2006 J. Am. Chem. Soc. 128 5523
[6]	Lin Y, Watson K A, Ghose S, Smith J G, Williams T V, Crooks R E, Cao W, Connell J W 2009 ACS Nano 3 871
[7]	Tong L M, Li Z P, Zhu T, Xu H X, Liu Z F 2008 J. Phys. Chem. C 112 7119
[8]	Yang C K, Zhao J J, Lu J P 2004 Nano Lett. 4 561
[9]	Ganguly U, Kan E C, Zhang Y 2005 Appl. Phys. Lett. 87 043108
[10]	Kong J, Chapline M G, Dai H J 2001 Adv. Mater. 13 1384
[11]	Star A, Joshi V, Skarupo S, Thomas D, Gabriel J C P 2006 J. Phys. Chem. B 110 21014
[12]	Kim B K, Park N, Na P S, So H M, Kim J J, Kim H, Kong K J, Chang H, Ryu B H, Choi Y M, Lee J O 2006 Nanotechnology 17 496
[13]	Stadermann M, Papadakis S J, Falvo M R, Fu Q, Liu J, Fridman Y, Boland J J, Superfine R, Washburn S 2005 Phys. Rev. B 72 245406
[14]	Sundqvist P, Garcia-Vidal F J, Flores F, Moreno-Moreno M, Gómez-Navarro C, Bunch J S, Gomez-Herrero J 2007 Nano Lett. 7 2568
[15]	Kodama Y, Sato R, Inami N, Shikoh E, Yamamoto Y, Hori H 2007 Appl. Phys. Lett. 91 133515
[16]	Zhou W W, Han Z Y, Wang J Y, Zhang Y, Jin Z, Sun X, Zhang Y W, Yan C H, Li Y 2006 Nano Lett. 6 2987
[17]	Wang J, Jin Z, Cheng J, Li Y 2009 J. Phys. Chem. C 113 8132
[18]	Zhao H B, Li Z, Li R, Zhang Z H,Zhang Y,Liu Y,Li Y 2009 Acta Phys. Sin. 58 373(in Chinese) [赵华波、李震、李睿、张朝晖、张岩、刘宇、李彦 2009 物理学报 58 373]
[19]	Purewal M S, Hong B H, Ravi A, Chandra B, Hone J, Kim P 2007 Phys. Rev. Lett. 9 2568
[20]	Durgun E, Dag S, Bagci V M K, Gulseren O, Yildirim T, Ciraci S 2003 Phys. Rev. B 67 201401R
[21]	Yagi Y, Briere T M, Sluiter M H F, Kumar V, Farajian A A, Kawazoe Y 2004 Phys. Rev. B 69 075414

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