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By solving Schrodinger equation and Poisson equation self-consistently, we have calculated the electronic structure for Si-doped GaAs/AlGaAs quantum well system at T=0 in the effective mass approximation. We studied the influence of the doping concentration and the thickness of the doping layer on the subband energies, eigen-envelope functions, Hartree potential, density distribution of the electrons, and the Fermi energy. It is found that at the given doping concentration, the subband energies decrease with the increase of the doping thickness, the width of the self consistent potential well increase, the deepth of the well decrease, the distribution of the electron density becomes wider, the peak value reduced. At the given thickness of the doping layer, with the increase of the doping concentration, the subband energies and Fermi energy monotonically increase, the self consistent potential well becomes narrower and deeper, the peak of the electron density distribution becomes higher, and concentrated around the center of the well.
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Keywords:
- doping /
- quantum well /
- electronic structure /
- semiconductor GaAs
[1] Chandhuri S 1983 Phys. Rev. B 28 4480
[2] Yang Y, Fedorov G, Barbara P 2013 Phys. Rev. B 87 045403
[3] Wolf G V, Chuburin Y P 2012 Physica E: Low dimensional system and Nanostructures 44 2063
[4] Stern F, Das Sarma S 1984 Phys. Rev. B 30 840
[5] Rauch C, Strasser G, Unterrainer K, Boxleitner W, Gornik E 1998 Phys. Rev. Lett. 81 3495
[6] Chang C Y, Lin W, Hsu W C, Wu T S, Chang S Z, Wang C 1991 Jpn. J. Appl. Phys. 30 1158
[7] Dohler G H, Kunzel H, Olego D 1981 Phys. Rev. Lett. 47 864
[8] Hai G Q, Studart N, Peeters F M 1995 Phys. Rev. B 52 11273
[9] Schubert E F, Ullrich B, Harris T D, Cunningham J E 1988 Phys. Rev. B 38 8305
[10] Gaggero-Sager L M, Naumis G G, Munoz-Hernandez M A, Palma-Montiel V 2010 Physica B 405 4267
[11] Miller R C 1984 J. Appl. Phys. 56 1136
[12] Gaggero-Sager L M, Perez-Alvarez R 1996 Phys. Stat. Sol. 197 105
[13] Zhang H F, Du P Y, Wong W J, Han G R 2005 Acta Phys. Sin. 54 5329 (in Chinese) [张海芳, 杜丕一, 翁文剑, 韩高荣 2005 物理学报 54 5329]
[14] Ungan Fatih, Kasapoglu Esin, Sari Huseyin, Sokmen Ismaiol 2009 Superlattices and Microstructures 46 864
[15] Ozturk E 2009 Superlattices and Microstructures 46 752
[16] Yue S L, Tang C C, Huang Y 2005 Physics 34 791 (in Chinese) [岳双林, Tang C C, 黄阳 2005 物理 34 791]
[17] Zhang L, Lin F Y, Hu H F 2001 Acta Phys. Sin. 50 1378 (in Chinese) [张龙, 林凤英, 胡和方 2001 物理学报 50 1378]
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[1] Chandhuri S 1983 Phys. Rev. B 28 4480
[2] Yang Y, Fedorov G, Barbara P 2013 Phys. Rev. B 87 045403
[3] Wolf G V, Chuburin Y P 2012 Physica E: Low dimensional system and Nanostructures 44 2063
[4] Stern F, Das Sarma S 1984 Phys. Rev. B 30 840
[5] Rauch C, Strasser G, Unterrainer K, Boxleitner W, Gornik E 1998 Phys. Rev. Lett. 81 3495
[6] Chang C Y, Lin W, Hsu W C, Wu T S, Chang S Z, Wang C 1991 Jpn. J. Appl. Phys. 30 1158
[7] Dohler G H, Kunzel H, Olego D 1981 Phys. Rev. Lett. 47 864
[8] Hai G Q, Studart N, Peeters F M 1995 Phys. Rev. B 52 11273
[9] Schubert E F, Ullrich B, Harris T D, Cunningham J E 1988 Phys. Rev. B 38 8305
[10] Gaggero-Sager L M, Naumis G G, Munoz-Hernandez M A, Palma-Montiel V 2010 Physica B 405 4267
[11] Miller R C 1984 J. Appl. Phys. 56 1136
[12] Gaggero-Sager L M, Perez-Alvarez R 1996 Phys. Stat. Sol. 197 105
[13] Zhang H F, Du P Y, Wong W J, Han G R 2005 Acta Phys. Sin. 54 5329 (in Chinese) [张海芳, 杜丕一, 翁文剑, 韩高荣 2005 物理学报 54 5329]
[14] Ungan Fatih, Kasapoglu Esin, Sari Huseyin, Sokmen Ismaiol 2009 Superlattices and Microstructures 46 864
[15] Ozturk E 2009 Superlattices and Microstructures 46 752
[16] Yue S L, Tang C C, Huang Y 2005 Physics 34 791 (in Chinese) [岳双林, Tang C C, 黄阳 2005 物理 34 791]
[17] Zhang L, Lin F Y, Hu H F 2001 Acta Phys. Sin. 50 1378 (in Chinese) [张龙, 林凤英, 胡和方 2001 物理学报 50 1378]
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