Be, Si掺杂调控GaAs纳米线结构相变及光学特性

亢玉彬; 唐吉龙; 李科学; 李想; 侯效兵; 楚学影; 林逢源; 王晓华; 魏志鹏

doi:10.7498/aps.70.20210782

摘要

GaAs基半导体掺杂技术通过在禁带中引入杂质能级, 对其电学及光学特性产生决定性作用, 当GaAs材料降维到一维纳米尺度时, 由于比表面积增加, 容易出现纤锌矿-闪锌矿共存混相结构, 此时GaAs纳米线掺杂不仅能调节其电光特性, 对其结构相变也具有显著调控作用. 本文研究了Be, Si掺杂对砷化镓(GaAs)纳米线晶体结构与光学特性的影响. 采用分子束外延在Si(111)衬底上自催化方法制备了本征、Si掺杂和Be掺杂GaAs纳米线. Raman光谱测试发现本征GaAs纳米线纤锌矿结构特有的E2模式峰, Si掺杂GaAs纳米线中E2峰减弱甚至消失, Be掺杂GaAs纳米线中E2模式峰消失. 通过高分辨透射电子显微镜和选区电子衍射直观地观察到GaAs纳米线的结构变化. 光致发光光谱显示本征GaAs纳米线存在纤锌矿-闪锌矿混相II-型结构发光, 通过Si掺杂和Be掺杂, 该发光峰消失, 转变为杂质缺陷相关的发光.

关键词:

GaAs纳米线 /
结构 /
掺杂 /
分子束外延

Abstract

GaAs-based semiconductor doping technology, in which impurity energy levels are introduced into the band gap, can give rise to a decisive effect on its electrical and optical properties. When GaAs material is reduced to one-dimensional nanoscale, due to the increase of specific surface area, wurtzite- zinc blende coexisting structure is prone to appearing. GaAs nanowire doping can not only adjust its electro-optical properties, but also have a significant regulatory effect on its structural phase transition. The effects of beryllium (Be) and silicon (Si) doping on crystal structure and optical properties of gallium arsenide (GaAs) nanowires (NWs) are studied in this paper. Primitive, Si-doped and Be-doped GaAs NWs are grown on Si(111) substrates by molecular beam epitaxy in virtue of the self-catalyzed growth mechanism. The Raman spectra of primitive, Si-doped and Be-doped GaAs NWs are measured. The E2 mode peak unique to the WZ structure of primitive GaAs NWs is found in the Raman spectrum, and the E2 mode peak in the Raman spectrum of Si-doped GaAs NWs weakens or even disappears. Moreover, The E2 mode peak is not found in the Raman spectrum of Be-doped GaAs NWs. Furthermore, the structural changes of GaAs NWs are observed more intuitively by high-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED). The PL spectra show that the wurtzite (WZ)-zinc blende (ZB) mixed phase II-type luminescence exists in primitive GaAs NWs, then the luminescence disappears due to Si or Be doping and turns into impurity defect related luminescence.

Keywords:

作者及机构信息

1.
长春理工大学, 高功率半导体激光国家重点实验室, 长春　130022

2.
长春理工大学理学院, 长春　130022

通信作者: 唐吉龙, jl_tangcust@163.com ; 李科学, ciomplikexue@163.com ;

基金项目: 国家自然科学基金(批准号: 61674021, 11674038, 61704011, 61904017, 11804335, 12074045)、吉林省科技发展计划(批准号: 20200301052RQ)、吉林省教育厅科学技术研究规划项目(批准号: JJKH20200763KJ)和长春理工大学科技创新基金(批准号: XQNJJ-2018-18)资助的课题

Authors and contacts

1.
State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology, Changchun 130022, China

2.
School of Science, Changchun University of Science and Technology, Changchun 130022, China

Corresponding author: Tang Ji-Long, jl_tangcust@163.com ; Li Ke-Xue, ciomplikexue@163.com ;

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 61674021, 11674038, 61704011, 61904017, 11804335, 12074045), the Developing Project of Science and Technology of Jilin Province, China (Grant No. 20200301052RQ), the Project of Education Department of Jilin Province, China (Grant No. JJKH20200763KJ), and the Youth Foundation of Changchun University of Science and Technology, China (Grant No. XQNJJ-2018-18)

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 GaAs纳米线SEM侧视图　(a)本征GaAs纳米线; (b) Si掺杂GaAs纳米线; (c) Be掺杂GaAs纳米线

Fig. 1. The side-view SEM images of GaAs NWs: (a) Intrinsic GaAs NWs; (b) Si-doped GaAs NWs; (c) Be-doped GaAs NWs.

下载: 全尺寸图片幻灯片

图 2 (a)本征, Si掺杂及Be掺杂GaAs纳米线的Raman光谱; (b)本征, (c) Si掺杂和(d) Be掺杂GaAs纳米线的多洛伦兹拟合图; (e)所有GaAs纳米线的GaAs LO与GaAs TO强度比值及GaAs LO的FWHM图

Fig. 2. (a) The Raman spectra of intrinsic, Si-doped and Be-doped GaAs NWs; (b) intrinsic, (c) Si-doped, and (d) Be-doped GaAs NWs are fitted by multi-Lorentzian functions; (e) intensity ratio of I_LO/I_TO and FWHM of GaAs LO for intrinsic, Si-doped and Be-doped GaAs NWs.

下载: 全尺寸图片幻灯片

图 3 GaAs纳米线的TEM和选区电子衍射图. 本征GaAs纳米线　(a)低分辨TEM, (b)高分辨TEM及(c)对应的选区电子衍射图样; Si掺杂GaAs纳米线(d)低分辨TEM, (e)高分辨TEM及(f)对应的选区电子衍射图样; Be掺杂GaAs纳米线(g)低分辨TEM, (h)高分辨TEM及(i)对应的选区电子衍射图样

Fig. 3. TEM and SAED of GaAs NWs: (a) Low-TEM, (b) HRTEM and (c) SAED of intrinsic GaAs NW; (d) low-TEM, (e) HRTEM and (f) SAED of Si-doped GaAs NW; (g) low-TEM, (h) HRTEM and (i) SAED of Be-doped GaAs NW.

下载: 全尺寸图片幻灯片

图 4 本征, Si掺杂和Be掺杂GaAs纳米线的低温(at 10 K)下光致发光光谱, 激发光源的功率密度为300 mW/cm²

Fig. 4. The PL spectra of intrinsic, Si-doped and Be-doped GaAs NWs at low temperature (10 K). The power density of the excitation light source is 300 mW/cm².

下载: 全尺寸图片幻灯片

图 5 本征GaAs纳米线光谱图　(a)本征GaAs纳米线在不同功率密度下的PL光谱曲线; (b)本征GaAs纳米线中峰P(A)和峰P(B)强度随功率密度的关系曲线; (c) P(A)和P(B)峰位和功率^1/3(P^1/3)的关系曲线

Fig. 5. The PL spectra of intrinsic GaAs NWs: (a) The PL spectral curves of intrinsic GaAs NWs at different power density; (b) the relationship between peak P (A) and P (B) intensity with power density in intrinsic GaAs NWs; (c) the relationship between P(A) and P(B) peaks and P^1/3.

下载: 全尺寸图片幻灯片

图 6 掺杂GaAs纳米线的光谱图　(a)不同功率密度下Si掺杂GaAs纳米线的PL光谱曲线; Si掺杂GaAs纳米线中P(C)和P(D)积分强度(b)和峰位(c)随功率密度的关系曲线; (d)不同功率密度下Be掺杂GaAs纳米线的PL光谱曲线; Be掺杂GaAs纳米线中P(E)和P(F)峰积分强度(e)和峰位(f)随功率密度的关系曲线

Fig. 6. The PL spectra of doped GaAs NWs: (a) The PL spectral curves of Si-doped GaAs NWs at different power density; the relationship between P (C) and P (D) integral intensity (b) and peak positions (c) with power density in Si-doped GaAs NWs; (d) the PL spectral curves of Be-doped GaAs NWs at different power density; The relationship between P (E) and P (F) peak integral intensity (e) and peak positions (f) with power density in Be-doped GaAs NWs.

下载: 全尺寸图片幻灯片

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[2]	Saxena D, Mokkapati S, Parkinson P, Jiang N, Gao Q, Tan H H, Jagadish C 2013 Nat. Photonics 7 963 Google Scholar
[3]	Zhu X, Lin F, Zhang Z, Chen X, Huang H, Wang D, Tang J, Fang X, Fang D, Ho J C, Liao L, Wei Z 2020 Nano Lett. 20 2654 Google Scholar
[4]	Krogstrup P, Jørgensen H I, Heiss M, Demichel O, Holm J V, Aagesen M, Nygard J, Fontcuberta i Morral A 2013 Nat. Photonics 7 306 Google Scholar
[5]	Glas F, Harmand J C, Patriarche G 2007 Phys. Rev. Lett. 99 146101 Google Scholar
[6]	Parkinson P, Joyce H J, Gao Q, Tan H H, Zhang X, Zou J, Jagadish C, Herz L M, Johnston M B 2009 Nano Lett. 9 3349 Google Scholar
[7]	Thelander C, Caroff P, Plissard S, Dey A W, Dick K A 2011 Nano Lett. 11 2424 Google Scholar
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[10]	Lehmann S, Wallentin J, Jacobsson D, Deppert K, Dick K A 2013 Nano Lett. 13 4099 Google Scholar
[11]	Panciera F, Baraissov Z, Patriarche G, Dubrovskii V G, Glas F, Travers L, Mirsaidov U, Harmand J C 2020 Nano Lett. 20 1669 Google Scholar
[12]	Jacobsson D, Panciera F, Tersoff J, Reuter M C, Lehmann S, Hofmann S, Dick K A, Ross F M 2016 Nature 531 317 Google Scholar
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[24]	Chiu Y S, Ya M H, Su W S, Chen Y F 2002 J. Appl. Phys. 92 5810 Google Scholar
[25]	王鹏华, 唐吉龙, 亢玉彬, 方铉, 房丹, 王登魁, 林逢源, 王晓华, 魏志鹏 2019 物理学报 68 087803 Google Scholar Wang P H, Tang J L, Kang Y B, Fang X, Fang D, Wang D, Lin F Y, Wang X H, Wei Z P 2019 Acta Phys. Sin. 68 087803 Google Scholar
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[28]	Arab S, Yao M, Zhou C, Dapkus P D, Cronin S B 2016 Appl. Phys. Lett. 108 182106 Google Scholar
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[30]	Zhu L D, Chan K T, Wagner D K, Ballantyne J M 1985 J. Appl. Phys. 57 5486 Google Scholar
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[34]	Scott G B, Duggan G, Dawson P, Weimann G 1981 J. Appl. Phys. 52 6888 Google Scholar

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