刻周期半圆弧槽窗片对次级电子倍增效应的抑制

张雪; 范俊杰; 王勇

doi:10.7498/aps.63.227902

摘要

为了抑制高功率盒形窗内的次级电子倍增效应, 研究了一种刻周期半圆弧槽窗片结构. 通过对槽内电场进行分析, 证明了半圆弧状槽可以有效避免尖锐边界的局部场增强效应. 利用蒙特卡罗随机算法对槽内的次级电子倍增效应进行数值模拟, 跟踪次级电子的轨迹及发展趋势, 获得了不同槽宽所对应的抑制次级电子倍增最低电场强度. 讨论了法向电场对半圆弧槽抑制次级电子倍增的影响. 该结构有望在高功率速调管中获得应用.

关键词:

In this paper, the periodic semicircle groove disk is investigated to restrain the multipactor phenomenon in high power pill-box window. Through the theoretical analysis, the semicircle groove is proved to avoid the local field enhancement, which always exists in the vicinity of the sharp boundary groove. The proper groove width with a corresponding minimal suppression tangential electric field is achieved by simulating the multipactor procedure with Monte-Carlo algorithm. The effect of normal electric field is also analyzed. This configuration is to be applied to the high power klystron.

Keywords:

作者及机构信息

1.
中国科学院电子学研究所, 中国科学院高功率微波源与技术重点实验室, 北京 100190;

2.
中国科学院大学, 北京 100149

基金项目: 国家重点基础研究发展计划(批准号:2013CB328901)资助的课题.

Authors and contacts

1.
Key Laboratory of High Power Microwave Sources and Technologies, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China;

2.
University of Chinese Academy of Sciences, Beijing 100149, China

Funds: Project supported by the National Basic Research Program of China (Grant No. 2013CB328901)

参考文献

[1]	Vlieks A E, Allen M A, Callin R S, Fowkes W R, Hoyt E W, Lebacqu J V, Lee T G 1989 IEEE Trans. Electr. Insul. 24 1023
[2]	Saito Y, Michizono S, Anami S, Kobayashi S 1993 IEEE Trans. Electr. Insul. 28 566
[3]	Saito Y 1993 IEEE Trans. Dielectr. Electr. Insul. 2 243
[4]	Power J G, Gai W, Gold S H, Kinkead A K, Konecny R, Jing C, Liu W, Yusof Z 2004 Phys. Rev. Lett. 23 164801
[5]	Zhu F, Zhang Z C, Luo J R, Zhang Y W 2010 IEEE Trans. ED 57 946
[6]	Michizono S, Kinbara A, Saito Y, Yamaguchi S, Anami S, Matuda N 1992 J. Vacuum Sci. Technol. A 10 1180
[7]	Michizono S, Saito Y, Yamaguchi S, Anami S, Matuda N, Kinbara A 1993 IEEE Trans. Electr. Insul. 28 692
[8]	Valfells A, Ang L K, Lau Y Y, Gilgenbach R M 2000 Phys. Plasmas 7 750
[9]	Cai L B, Wang J G, Zhu X Q, Wang Y, Xuan C, Xia H F 2012 Acta Phys. Sin. 61 075101 (in Chinese) [蔡利兵, 王建国, 朱湘琴, 王玥, 宣春, 夏洪富 2012 物理学报 61 075101]
[10]	Neuber A A, Edmiston G F, Krompholz J T, Dickens J C, Kristiansen M 2007 IEEE Trans. Magnetics 43 496
[11]	Edmiston G F, Krile J T, Neuber A A 2008 IEEE Trans. Plasma Sci. 36 946
[12]	Chang C, Liu G Z, Huang H J, Chen C H, Fang J Y 2009 Phys. Plasmas 16 083501
[13]	Chang C, Huang H J, Liu G Z, Chen C H, Hou Q 2009 Phys. Plasmas 105 123305
[14]	Cheng G X, Cai D, Hong Z Q, Liu L 2013 IEEE Trans. Dielectr. Electr. Insul. 20 1942
[15]	Cheng G X, Cheng X B, Liu L, Liu X L 2012 High Power Laser and Particle Beams 24 801 (in Chinese) [程国新, 程新兵, 刘列, 刘新亮 2012 强激光与粒子束 24 801]
[16]	Zhang H B, Yang J H, Cheng G X, Li G L, Shu T 2013 High Power Laser and Particle Beams 25 1189 (in Chinese) [张慧博, 杨建华, 程国新, 李国林, 舒挺 2013 强激光与粒子束 25 1189]
[17]	Kishek R A, Lau Y Y, Ang L K, Valfells A, Gilgenbach R M 1998 Phys. Plasmas 5 2120
[18]	Kryazhev A, Buyanova M, Semenov V, Anderson D, Lisak M 2002 Phys. Plasmas 9 4736
[19]	Ang L K, Lau Y Y, Kishek R A, Gilgenbach R M 1998 IEEE Trans. Plasma Sci. 26 290
[20]	Vaughan J R M 1961 IEEE Trans. ED 8 302
[21]	Vaughan J R M 1988 IEEE Trans. ED 35 1172
[22]	Zhu F, Zhang Z C, Dai S, Luo J R 2011 Acta Phys. Sin. 60 084103 (in Chinese) [朱方, 张兆传, 戴舜, 罗继润 2011 物理学报 60 084103]
[23]	Zhang X, Wang Y, Fan J J, Zhu F, Zhang R 2014 Acta Phys. Sin. 63 167901 (in Chinese) [张雪, 王勇, 范俊杰, 朱方, 张瑞 2014 物理学报 63 167901]

施引文献

[1]	Vlieks A E, Allen M A, Callin R S, Fowkes W R, Hoyt E W, Lebacqu J V, Lee T G 1989 IEEE Trans. Electr. Insul. 24 1023
[2]	Saito Y, Michizono S, Anami S, Kobayashi S 1993 IEEE Trans. Electr. Insul. 28 566
[3]	Saito Y 1993 IEEE Trans. Dielectr. Electr. Insul. 2 243
[4]	Power J G, Gai W, Gold S H, Kinkead A K, Konecny R, Jing C, Liu W, Yusof Z 2004 Phys. Rev. Lett. 23 164801
[5]	Zhu F, Zhang Z C, Luo J R, Zhang Y W 2010 IEEE Trans. ED 57 946
[6]	Michizono S, Kinbara A, Saito Y, Yamaguchi S, Anami S, Matuda N 1992 J. Vacuum Sci. Technol. A 10 1180
[7]	Michizono S, Saito Y, Yamaguchi S, Anami S, Matuda N, Kinbara A 1993 IEEE Trans. Electr. Insul. 28 692
[8]	Valfells A, Ang L K, Lau Y Y, Gilgenbach R M 2000 Phys. Plasmas 7 750
[9]	Cai L B, Wang J G, Zhu X Q, Wang Y, Xuan C, Xia H F 2012 Acta Phys. Sin. 61 075101 (in Chinese) [蔡利兵, 王建国, 朱湘琴, 王玥, 宣春, 夏洪富 2012 物理学报 61 075101]
[10]	Neuber A A, Edmiston G F, Krompholz J T, Dickens J C, Kristiansen M 2007 IEEE Trans. Magnetics 43 496
[11]	Edmiston G F, Krile J T, Neuber A A 2008 IEEE Trans. Plasma Sci. 36 946
[12]	Chang C, Liu G Z, Huang H J, Chen C H, Fang J Y 2009 Phys. Plasmas 16 083501
[13]	Chang C, Huang H J, Liu G Z, Chen C H, Hou Q 2009 Phys. Plasmas 105 123305
[14]	Cheng G X, Cai D, Hong Z Q, Liu L 2013 IEEE Trans. Dielectr. Electr. Insul. 20 1942
[15]	Cheng G X, Cheng X B, Liu L, Liu X L 2012 High Power Laser and Particle Beams 24 801 (in Chinese) [程国新, 程新兵, 刘列, 刘新亮 2012 强激光与粒子束 24 801]
[16]	Zhang H B, Yang J H, Cheng G X, Li G L, Shu T 2013 High Power Laser and Particle Beams 25 1189 (in Chinese) [张慧博, 杨建华, 程国新, 李国林, 舒挺 2013 强激光与粒子束 25 1189]
[17]	Kishek R A, Lau Y Y, Ang L K, Valfells A, Gilgenbach R M 1998 Phys. Plasmas 5 2120
[18]	Kryazhev A, Buyanova M, Semenov V, Anderson D, Lisak M 2002 Phys. Plasmas 9 4736
[19]	Ang L K, Lau Y Y, Kishek R A, Gilgenbach R M 1998 IEEE Trans. Plasma Sci. 26 290
[20]	Vaughan J R M 1961 IEEE Trans. ED 8 302
[21]	Vaughan J R M 1988 IEEE Trans. ED 35 1172
[22]	Zhu F, Zhang Z C, Dai S, Luo J R 2011 Acta Phys. Sin. 60 084103 (in Chinese) [朱方, 张兆传, 戴舜, 罗继润 2011 物理学报 60 084103]
[23]	Zhang X, Wang Y, Fan J J, Zhu F, Zhang R 2014 Acta Phys. Sin. 63 167901 (in Chinese) [张雪, 王勇, 范俊杰, 朱方, 张瑞 2014 物理学报 63 167901]

计量

文章访问数: 4740
PDF下载量: 310
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板