N型稀磁半导体Ge0.96–xBixFe0.04Te薄膜的磁电性质研究

樊济宇; 冯瑜; 陆地; 张卫纯; 胡大治; 杨玉娥; 汤如俊; 洪波; 凌浪生; 王彩霞; 马春兰; 朱岩

doi:10.7498/aps.68.20190019

摘要

GeTe基稀磁半导体材料因具有可独立调控载流子浓度和磁性离子浓度的特性而受到广泛关注. 本文利用脉冲激光沉积技术制备了该体系的单晶外延薄膜, 并通过高价态Bi元素部分取代Ge元素的方法实现了材料中载流子类型从空穴向电子的转变, 即制备出N型GeTe基稀磁半导体. 测量结果表明, 无论是室温还是低温下的Hall电阻曲线皆呈现负斜率, 说明体系中载流子是电子; 并且当Bi掺杂量达到32%时, 电子浓度为10²¹/cm³. 变温输运性质的测量证明体系的输运行为呈现半导体特征. 通过测量低温10 K下的绝热磁化曲线, 在高Bi掺杂体系中观测到了明显的铁磁行为, 而低于32%Bi掺杂量的体系中未观察到. 这一结果说明, 高掺杂Bi的替代导致载流子浓度的增加, 促进了载流子传递Ruderman-Kittel-Kasuya-Yoshida相互作用, 使得分散的Fe-Fe之间产生磁耦合作用, 进而形成铁磁有序态.

关键词:

Abstract

The epitaxial thin films of Ge_0.96−xBi_xFe_0.04Te are deposited on BaF₂ substrates by using pulsed laser deposition technique. The thin films with three different compositions i.e. Ge_0.8Bi_0.2Te, Ge_0.76Bi_0.2Fe_0.04Te, and Ge_0.64Bi_0.32Fe_0.04Te are prepared in this wok. Their high-quality epitaxy and crystallinity are confirmed by X-ray diffraction and atomic force microscopy. According to the measurements of Hall effect variation, we find that each of all curves exhibits a negative slope for the different films as the temperature varies from low temperature to room temperature, indicating that Ge_0.96−xBi_xFe_0.04Te films are n-type material because the substitution of Bi for Ge makes the carriers change from holes into electrons. Temperature dependence of resistivity confirms that the electronic transport behavior for each of Ge_0.96−xBi_xFe_0.04Te thin films exhibits a typical semiconductor characteristic. From the measurements of temperature dependence of electronic transport under various external magnetic fields, we find that the Ge_0.64Bi_0.32Fe_0.04Te thin film shows some magnetoresistive effect while other composition films do not possess such a property. Based on the linear fitting of temperature dependence of magnetic susceptibility in high temperature and low temperature region, the magnetic property of Ge_0.64Bi_0.32Fe_0.04Te thin film changes from 253 K. Together with the study of magnetic susceptibility curve in the paramagnetic region, the Curie-Weiss temperature is determined to be 102 K. At a low temperature of 10.0 K, we observe an obvious ferromagnetic hystersis loop in Ge_0.64Bi_0.32Fe_0.04Te instead of in Ge_0.76Bi_0.2Fe_0.04Te thin film. These results imply that the increase of Bi dopant is main reason for the establishment of ferromagnetic ordering state. The carrier concentration increases and thus promotes the carriers transporting the Ruderman-Kittel-Kasuya-Yoshida interaction, thereby leading to the separated Fe ions producing the magnetic interaction and forming an n-type diluted magnetic semiconductor.

Keywords:

diluted magnetic semiconductor /
epitaxial thin film /
Ruderman-Kittel-Kasuya-Yoshida interaction /
ferromagnetic state

作者及机构信息

1.
南京航空航天大学理学院应用物理系, 南京　210006

2.
苏州大学物理科学与技术学院, 苏州　215006

3.
中国计量大学材料科学与工程学院, 杭州　310018

4.
中国科学院强磁场科学中心, 合肥　230031

5.
扬州大学物理科学与技术学院, 扬州　225009

6.
苏州科技大学数理学院, 江苏省微纳热流技术与能源应用重点实验室, 苏州　215009

通信作者: 马春兰, wlxmcl@mail.usts.edu.cn ; 朱岩, yzhu@nuaa.edu.cn

基金项目: 国家自然科学基金(批准号: 11204131, 11374159)、江苏省高等学校自然科学研究重大项目资助(批准号: 17KJA140001)和江苏省“六大人才高峰”高层次人才项目(批准号: XCL-078)资助的课题.

Authors and contacts

1.
College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing 210006, China

2.
Department of Physics, Soochow University, Suzhou 215006, China

3.
Department of Materials, China Jiliang University, Hangzhou 310018, China

4.
High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China

5.
Department of Physics, Yangzhou University, Yangzhou 225009, China

6.
Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology, Suzhou 215009, China

Corresponding author: Ma Chun-Lan, wlxmcl@mail.usts.edu.cn ; Zhu Yan, yzhu@nuaa.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11204131, 11374159), NSF of Jiangsu Higher Education Institutions, China (Grant No. 17KJA140001), and the Six Talent Peaks Project of Jiangsu, China (Grant No. XCL-078).

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参考文献

[1]	Ohno H, Chiba D, Matsukura F, Omiya T, Abe E, Dietl T, Ohno Y, Ohtani K 2000 Nature 408 944 Google Scholar
[2]	Burch K, Shrekenhamer D, Singley E, Stephens J, Sheu B, Kawakami R, Schiffer P, Samarth N, Awschalom D, Basov D 2006 Phys. Rev. Lett. 97 087208 Google Scholar
[3]	Richardella A, Roushan P, Mack S, Zhou B, Huse D, Awschalom D, Yazdani A 2010 Science 327 665 Google Scholar
[4]	Li Y Y, Cao Y F, Wei G N, Li Y Y, Ji Y, Wang K Y, Edmonds K W, Rushforth A W, Foxon C T, Gallagher B L 2013 Appl. Phys. Lett. 103 022401 Google Scholar
[5]	Prinz G A 1998 Science 282 1660 Google Scholar
[6]	Pappert K, Humpfner S, Gould C, Wenisch J, Brunner K, Schmidt G, Molenkamp L W 2007 Nat. Phys. 3 573 Google Scholar
[7]	Wang K Y, Edmonds K W, Irvine A C, Tatara G, de Ranieri E, Wunderlich J, Olejnik K, Rushforth A W, Campion R P, Williams D A, Foxon C T, Gallagher B L 2010 Appl. Phys. Lett. 97 262102 Google Scholar
[8]	Fan J Y, Eom J H 2008 Appl. Phys. Lett. 92 142101 Google Scholar
[9]	Yang M Y, Cai K M, Ju H L, Edmonds K W, Yang G, Liu S, Li B H, Zhang B, Sheng Y, Wang S G, Ji Y, Wang K Y 2016 Sci. Rep. 6 20778 Google Scholar
[10]	Cai K M, Yang M Y, Ju H L, Wang S M, Ji Y, Li B H, Edmonds K W, Sheng Y, Zhang B, Zhang N, Liu S, Zheng H Z, Wang K Y 2017 Nat. Mat. 16 712 Google Scholar
[11]	Kolobov A V, Tominaga J 2003 Appl. Phys. Lett. 82 382 Google Scholar
[12]	Lee S H, Ko D K, Jung Y, Agarwal R 2006 Appl. Phys. Lett. 89 223116 Google Scholar
[13]	Akola J, Jones R O 2007 Phys. Rev. B 76 235201 Google Scholar
[14]	Sante D D, Barone P, Bertacco R, Picozzi S 2013 Adv. Mater. 25 509 Google Scholar
[15]	张楠, 张保, 杨美音, 蔡凯明, 盛宇, 李予才, 邓永城, 王开友 2017 物理学报 66 027501 Google Scholar Zhang N, Zhang B, Yang M Y, Cai K M, Sheng Y, Li Y C, Deng Y C, Wang K Y 2017 Acta Phys. Sin. 66 027501 Google Scholar
[16]	杜成旭, 王婷, 杜颖妍, 贾倩, 崔玉亭, 胡爱元, 熊元强, 毋志民 2018 物理学报 67 187101 Google Scholar Du C X, Wang T, Du Y Y, Jia Q, Cui Y T, Hu A Y, Xiong Y Q, Wu Z M 2018 Acta Phys. Sin. 67 187101 Google Scholar
[17]	Jantsch W 1983 Dielectric Properties and Soft Modes in Semiconducting (Pb, Sn, Ge)Te, Springer Tracts in Modern Physics Vol. 99 (Berlin: Springer Verlag)
[18]	Fukuma Y, Asada H, Miyawaki S, Koyanagi T, Senba S, Goto K, Sato H 2008 Appl. Phys. Lett. 93 252502
[19]	Lechner R T, Springholz G, Hassan M, Groiss H, Kirchschlager R, Stangl J, Hrauda N, Bauer G 2010 Appl. Phys. Lett. 97 023101 Google Scholar
[20]	Hassan M, Springholz G, Lechner R T, Groiss H, Kirchschlager R, Bauer G 2011 J. Cryst. Growth 323 363 Google Scholar
[21]	Tong F, J. Hao H, Chen Z P, Gao G Y, Tong H, Miao X S 2011 Appl. Phys. Lett. 99 202508 Google Scholar
[22]	Liu J D, Cheng X M, Tong F, Miao X S 2014 J. Appl. Phys. 116 043901 Google Scholar
[23]	Xu L S, Han H, Fan J Y, Shi D N, Hu D Z, Du H F, Zhang L, Zhang Y H, Yang H 2017 EPL 117 47004 Google Scholar
[24]	Chen L L, Fan J Y, Tong W, Hu D Z, Du H F, Zhang L, Ling L S, Pi L, Zhang Y H, Yang H 2018 J. Mater. Sci. 53 323 Google Scholar

施引文献

图 1 (a) Ge_0.76Bi_0.2Fe_0.04Te薄膜XRD扫描图; (b)沿着{220}面内XRD扫描图

Fig. 1. (a) XRD diffraction pattern of Ge_0.76Bi_0.2Fe_0.04Te film; (b) φ-scans of Ge_0.76Bi_0.2Fe_0.04Te film in {220} plane.

下载: 全尺寸图片幻灯片

图 2 (a) Ge_0.76Bi_0.2Fe_0.04Te薄膜表面AFM图; (b)沿着红线测试薄膜表面高度起伏结果

Fig. 2. (a) AFM 5 μm × 5 μm images of Ge_0.76Bi_0.2Fe_0.04Te film; (b) the height profile along the red solid line.

下载: 全尺寸图片幻灯片

图 3 (a) Ge_0.76Bi_0.2Fe_0.04Te薄膜不同温度下霍尔效应测量结果, 插图为载流子浓度随温度变化; (b) Ge_0.64Bi_0.32Fe_0.04Te薄膜不同温度下霍尔效应测量结果, 插图为载流子浓度随温度变化

Fig. 3. (a) Magnetic field dependence of Hall voltage for Ge_0.76Bi_0.2Fe_0.04Te film under different temperatures, inset shows the temperature dependence of carrier concentrations; (b) magnetic field dependence of Hall voltage for Ge_0.64Bi_0.32Fe_0.04Te film under different temperatures, inset shows the temperature dependence of carrier concentrations.

下载: 全尺寸图片幻灯片

图 4 (a) Ge_0.76Bi_0.2Fe_0.04Te和Ge_0.64Bi_0.32Fe_0.04Te电阻率随温度变化曲线; (b)迁移率随温度变化曲线; (c) Ge_0.76Bi_0.2Fe_0.04Te薄膜在零磁场和3.0 T磁场下变温电阻率曲线; (d) Ge_0.64Bi_0.32Fe_0.04Te薄膜在零磁场和3.0 T磁场下变温电阻率曲线

Fig. 4. (a) Temperature dependent resistivity of Ge_0.76Bi_0.2Fe_0.04Te and Ge_0.64Bi_0.32Fe_0.04Te film; (b) temperature dependent resistivity of mobility; (c) temperature dependent resistivity of Ge_0.76Bi_0.2Fe_0.04Te film under 0 T and 3.0 T field; (d) emperature dependent resistivity of Ge_0.64Bi_0.32Fe_0.04Te film under 0 T and 3.0 T field.

下载: 全尺寸图片幻灯片

图 5 Ge_0.64Bi_0.32Fe_0.04Te薄膜磁化率随温度变化曲线; 插图为磁化率倒数随温度变化曲线, 直线是利用居里外斯定律拟合的结果

Fig. 5. Temperature dependence of magnetic susceptibility curves for Ge_0.64Bi_0.32Fe_0.04Te film; inset shows temperature dependence of inverse magnetic susceptibility and the solid line is the fitting result with the Cuire-Weiss law.

下载: 全尺寸图片幻灯片

图 6 在10.0 K温度下Ge_0.64Bi_0.32Fe_0.04Te薄膜磁滞回线; 插图为低磁场部分放大图像

Fig. 6. Isothermal magnetization curves for Ge_0.64Bi_0.32Fe_0.04Te film at 10.0 K, and inset shows the magnified hysteresis loop.

下载: 全尺寸图片幻灯片

[1]	Ohno H, Chiba D, Matsukura F, Omiya T, Abe E, Dietl T, Ohno Y, Ohtani K 2000 Nature 408 944 Google Scholar
[2]	Burch K, Shrekenhamer D, Singley E, Stephens J, Sheu B, Kawakami R, Schiffer P, Samarth N, Awschalom D, Basov D 2006 Phys. Rev. Lett. 97 087208 Google Scholar
[3]	Richardella A, Roushan P, Mack S, Zhou B, Huse D, Awschalom D, Yazdani A 2010 Science 327 665 Google Scholar
[4]	Li Y Y, Cao Y F, Wei G N, Li Y Y, Ji Y, Wang K Y, Edmonds K W, Rushforth A W, Foxon C T, Gallagher B L 2013 Appl. Phys. Lett. 103 022401 Google Scholar
[5]	Prinz G A 1998 Science 282 1660 Google Scholar
[6]	Pappert K, Humpfner S, Gould C, Wenisch J, Brunner K, Schmidt G, Molenkamp L W 2007 Nat. Phys. 3 573 Google Scholar
[7]	Wang K Y, Edmonds K W, Irvine A C, Tatara G, de Ranieri E, Wunderlich J, Olejnik K, Rushforth A W, Campion R P, Williams D A, Foxon C T, Gallagher B L 2010 Appl. Phys. Lett. 97 262102 Google Scholar
[8]	Fan J Y, Eom J H 2008 Appl. Phys. Lett. 92 142101 Google Scholar
[9]	Yang M Y, Cai K M, Ju H L, Edmonds K W, Yang G, Liu S, Li B H, Zhang B, Sheng Y, Wang S G, Ji Y, Wang K Y 2016 Sci. Rep. 6 20778 Google Scholar
[10]	Cai K M, Yang M Y, Ju H L, Wang S M, Ji Y, Li B H, Edmonds K W, Sheng Y, Zhang B, Zhang N, Liu S, Zheng H Z, Wang K Y 2017 Nat. Mat. 16 712 Google Scholar
[11]	Kolobov A V, Tominaga J 2003 Appl. Phys. Lett. 82 382 Google Scholar
[12]	Lee S H, Ko D K, Jung Y, Agarwal R 2006 Appl. Phys. Lett. 89 223116 Google Scholar
[13]	Akola J, Jones R O 2007 Phys. Rev. B 76 235201 Google Scholar
[14]	Sante D D, Barone P, Bertacco R, Picozzi S 2013 Adv. Mater. 25 509 Google Scholar
[15]	张楠, 张保, 杨美音, 蔡凯明, 盛宇, 李予才, 邓永城, 王开友 2017 物理学报 66 027501 Google Scholar Zhang N, Zhang B, Yang M Y, Cai K M, Sheng Y, Li Y C, Deng Y C, Wang K Y 2017 Acta Phys. Sin. 66 027501 Google Scholar
[16]	杜成旭, 王婷, 杜颖妍, 贾倩, 崔玉亭, 胡爱元, 熊元强, 毋志民 2018 物理学报 67 187101 Google Scholar Du C X, Wang T, Du Y Y, Jia Q, Cui Y T, Hu A Y, Xiong Y Q, Wu Z M 2018 Acta Phys. Sin. 67 187101 Google Scholar
[17]	Jantsch W 1983 Dielectric Properties and Soft Modes in Semiconducting (Pb, Sn, Ge)Te, Springer Tracts in Modern Physics Vol. 99 (Berlin: Springer Verlag)
[18]	Fukuma Y, Asada H, Miyawaki S, Koyanagi T, Senba S, Goto K, Sato H 2008 Appl. Phys. Lett. 93 252502
[19]	Lechner R T, Springholz G, Hassan M, Groiss H, Kirchschlager R, Stangl J, Hrauda N, Bauer G 2010 Appl. Phys. Lett. 97 023101 Google Scholar
[20]	Hassan M, Springholz G, Lechner R T, Groiss H, Kirchschlager R, Bauer G 2011 J. Cryst. Growth 323 363 Google Scholar
[21]	Tong F, J. Hao H, Chen Z P, Gao G Y, Tong H, Miao X S 2011 Appl. Phys. Lett. 99 202508 Google Scholar
[22]	Liu J D, Cheng X M, Tong F, Miao X S 2014 J. Appl. Phys. 116 043901 Google Scholar
[23]	Xu L S, Han H, Fan J Y, Shi D N, Hu D Z, Du H F, Zhang L, Zhang Y H, Yang H 2017 EPL 117 47004 Google Scholar
[24]	Chen L L, Fan J Y, Tong W, Hu D Z, Du H F, Zhang L, Ling L S, Pi L, Zhang Y H, Yang H 2018 J. Mater. Sci. 53 323 Google Scholar

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N型稀磁半导体Ge_0.96–xBi_xFe_0.04Te薄膜的磁电性质研究