β-Ga<sub>2</sub>O<sub>3</sub>纳米材料的尺寸调控与光致发光特性

马腾宇; 李万俊; 何先旺; 胡慧; 黄利娟; 张红; 熊元强; 李泓霖; 叶利娟; 孔春阳

doi:10.7498/aps.69.20200158

摘要

氧化镓(Ga₂O₃)纳米材料在紫外透明电极、高温气体传感器、日盲紫外探测器和功率器件等领域具有巨大的应用潜力, 而实现高结晶质量和尺寸形貌可控的Ga₂O₃纳米材料是关键. 本文通过水热法制备了不同尺寸的羟基氧化镓(GaOOH)纳米棒、纳米棒束和纺锤体, 经后期高温煅烧均成功转变为高质量单晶β-Ga₂O₃纳米材料并较好地保留了原始GaOOH的形态特征. 利用X射线衍射(XRD)、拉曼散射光谱(Raman)和场发射扫描电子显微镜(FE-SEM)等表征手段系统研究了前驱液的pH值大小和阴离子表面活性剂浓度对GaOOH和β-Ga₂O₃纳米材料晶体结构和表面形貌的影响, 并深入探讨了不同条件下GaOOH纳米材料的生长机制. 此外, 室温光致发光谱(PL)测试发现不同形貌的β-Ga₂O₃纳米材料均展现出典型的蓝绿色发射峰和尖锐的红光发射峰, 与纳米材料中本征缺陷的存在密切相关. 上述研究结果为未来实现高质量β-Ga₂O₃纳米材料的可控制备提供了有益参考.

关键词:

Abstract

Gallium oxide (Ga₂O₃) nanomaterials have great potential in the fields of ultraviolet transparent electrodes, high-temperature gas sensors, solar blind ultraviolet detectors and power devices, while achieving Ga₂O₃ nanomaterials with high crystalline quality and controllable size and morphology still remains challenge. Herein, size-controllable Gallium oxide hydroxide (GaOOH) nanorods, nanorod bundles, and spindles were prepared by hydrothermal method. After high temperature calcination, GaOOH nanomaterials were successfully transformed into higher-quality single-crystal β-Ga₂O₃ nanomaterials which well retained the morphological characteristics of the pristine GaOOH.With the help of X-ray diffraction (XRD), Raman scattering spectroscopy (Raman) and field emission scanning electron microscope (FE-SEM), we systematically studied the influence of the pH value and the concentration of anionic surfactants in the precursor solution on the crystal structure and surface morphology of GaOOH and β-Ga₂O₃ nanomaterials, and explored the different growth mechanism of GaOOH nanomaterials under different conditions. Simultaneously, room temperature photoluminescence (PL) tests revealed that β-Ga₂O₃ nanomaterials with different morphologies exhibit typical broad blue-green emission and sharp red emission, which are closely related to the existence of intrinsic defects in nanomaterials.The above research results provide valuable information for the controllable preparation of high-quality β-Ga₂O₃ nanomaterials.

Keywords:

作者及机构信息

重庆师范大学物理与电子工程学院, 光电功能材料重庆市重点实验室, 重庆　401331

通信作者: 李万俊, liwj@cqnu.edu.cn ; 张红, zhh_2016@163.com ;

基金项目: 国家级-国家自然科学基金(11904041)

Authors and contacts

Chongqing Key Laboratory of Photo-Electric Functional Materials, College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China

Corresponding author: Li Wan-Jun, liwj@cqnu.edu.cn ; Zhang Hong, zhh_2016@163.com ;

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 不同pH值和SDBS浓度下样品的XRD图谱　(a) GaOOH; (b) β-Ga₂O₃

Fig. 1. XRD patterns of samples under different pH values and SDBS concentrations: (a) GaOOH; (b) β-Ga₂O₃.

下载: 全尺寸图片幻灯片

图 2 不同pH值和SDBS浓度下β-Ga₂O₃样品的Raman图谱

Fig. 2. Raman spectra of β-Ga₂O₃samples at different pH values and SDBS concentrations.

下载: 全尺寸图片幻灯片

图 3 不同pH值下β-Ga₂O₃样品的SEM　(a), (d) pH = 5; (b), (e) pH = 7; (c), (f) pH = 9; (g)—(i)长度分布图

Fig. 3. Typical SEM images of β-Ga₂O₃ at different pH values of (a), (d) pH = 5, (b), (e) pH = 7 and (c), (f) pH = 9; (g)—(i) length distribution.

下载: 全尺寸图片幻灯片

图 4 在pH = 5时加入SDBS后β-Ga₂O₃样品的SEM图像　(a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L; (g)−(i)长度分布图

Fig. 4. Typical SEM images of β-Ga₂O₃ added with SDBS at pH = 5: (a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L; (g)−(i) length distribution.

下载: 全尺寸图片幻灯片

图 5 在pH = 9时加入SDBS后β-Ga₂O₃样品的SEM图像　(a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L; (g)−(i)长度分布图

Fig. 5. Typical SEM images of β-Ga₂O₃ added with SDBS at pH = 9: (a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L; (g)−(i) length distribution.

下载: 全尺寸图片幻灯片

图 6 不同pH值和SDBS浓度下GaOOH的生长机理

Fig. 6. Growth mechanism of GaOOH at different pH and SDBS concentrations.

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图 A1 不同pH值下GaOOH纳米材料的SEM　(a), (d) pH = 5; (b), (e) pH = 7; (c), (f) pH = 9

Fig. A1. Typical SEM images of GaOOH at different pH values: (a), (d) pH = 5; (b), (e) pH = 7; (c), (f) pH = 9.

下载: 全尺寸图片幻灯片

图 A3 在pH = 9时加入SDBS后GaOOH纳米材料的SEM图像　(a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L

Fig. A3. Typical SEM images of GaOOH added with SDBS at pH = 9: (a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L.

下载: 全尺寸图片幻灯片

图 7 不同生长条件下β-Ga₂O₃的室温光致发光谱　(a) 不同pH; (b) pH = 5加入SDBS; (c) pH = 9加入SDBS

Fig. 7. Room temperature PL of β-Ga₂O₃: (a) Different pH values without SDBS; (b) with different concentrations of SDBS at pH = 5; (c) with different concentrations of SDBS at pH = 9.

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图 A2 在pH = 5时加入SDBS后GaOOH纳米材料的SEM图像　(a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L

Fig. A2. Typical SEM images of GaOOH added with SDBS at pH = 5: (a), (d) 0 mmol/L; (b), (e) 0.4 mmol/L; (c), (f) 0.8 mmol/L.

下载: 全尺寸图片幻灯片

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[4]	Guo D, Guo Q, Chen Z, Wu Z, Li P, Tang W 2019 Mater. Today Phys. 11 100157 Google Scholar
[5]	Kumar M, Kuma S, Kumar V, Singh R 2019 Gallium Oxide (1st Ed.) (Amsterdam: Elsevier) pp91–115
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[8]	Xia Z B, Joishi C, Krishnamoorthy S, Bajaj S, Zhang Y W, Brenner M, Lodha S, Rajan S 2018 IEEE Electron Device Lett. 39 568 Google Scholar
[9]	冯秋菊, 李芳, 李彤彤, 李昀铮, 石博, 李梦轲, 梁红伟 2018 物理学报 67 218101 Google Scholar Feng Q J, Li F, Li T T, Li X Z, Shi B, Li M K, Liang H W 2018 Acta Phys. Sin. 67 218101 Google Scholar
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[23]	Zhao Y Y, Frost R L, Yang J, Martens W N 2008 J. Phys. Chem. C 112 3568
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[40]	Nogales E, Méndez B, Piqueras J 2005 Appl. Phys. Lett. 86 113112 Google Scholar

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β-Ga₂O₃纳米材料的尺寸调控与光致发光特性