双极型晶体管总剂量效应的统计特性

李顺; 宋宇; 周航; 代刚; 张健

doi:10.7498/aps.70.20201835

摘要

双极型晶体管的总电离剂量辐照效应主要体现在基极电流(I_B)的退化, 其作用机理是电离辐射在SiO₂中及Si/SiO₂界面作用导致的氧化物陷阱电荷面密度(N_ot)和界面陷阱电荷面密度(N_it)的增长. 本文基于定制设计的栅控横向PNP晶体管, 开展了大样本、多剂量点的电离总剂量效应实验, 获得了双极型晶体管I_B, N_ot, N_it的分散性及其随总剂量变化的统计特性, 初步建立了晶体管损伤分散性与N_ot分散性的关联. 该研究成果可以有效支撑双极型电路辐射可靠性的机理研究与定量评估.

关键词:

Abstract

The base current (I_B) of silicon bipolar transistor degrades when it is subjected to total ionizing dose (TID) irradiation, which is due to the generation of oxide trapped charges (N_ot) in the oxide layer and interface traps (N_it) at the silica/silicon interface. In this work, we investigate the statistical characteristic of I_B of bipolar transistors and its possible microscopic origin. Especially, we carry out TID irradiation experiments on a large sample size of gated lateral PNP (GLPNP) transistors. Forty GLPNP transistors are sequentially irradiated to the total doses of 0.6 krad (Si), 2.6 krad (Si), 4.0 krad (Si), 7.4 krad (Si), and 10.8 krad (Si). The statistical characteristics of their I_B, N_ot, and N_it are obtained from the Gummel, gate sweep (GS), and sub-threshold sweep (DS) curves, respectively. It is found that no matter what the dose is, I_B, N_ot, and N_it all follow a lognormal distribution. However, the distribution parameters change as the irradiation dose increases. Remarkably, the statistical median and standard deviation of I_B as a function of dose show a strong correlation with those of N_ot, but essentially differ from those of N_it. This fact uncovers that for our research objects and dose rate, the sample-to-sample variability of I_B mainly stems from the variation of N_ot. These interesting results should have potential applications in exploring the mechanism and evaluating the irradiation reliability of bipolar microcircuits.

Keywords:

作者及机构信息

1.
中国工程物理研究院微系统与太赫兹研究中心, 成都　610200

2.
内江师范学院物理与电子信息工程学院, 内江　641112

3.
电子科技大学电子科学与工程学院, 成都　611731

4.
中国工程物理研究院电子工程研究所, 绵阳　621000

通信作者: 宋宇, kwungyusung@gmail.com ; 张健, jianzhang@uestc.edu.cn

基金项目: 科学挑战计划项目(批准号: TZ2016003-1)资助的课题

Authors and contacts

1.
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China

2.
College of Physics and Electronic Information Engineering, Neijiang Normal University, Neijiang 641112, China

3.
School of Electronic Science and Engineering, University of Electronic science and Technology of China, Chengdu 610000, China

4.
Institute of Electronic Engineering, China Academy of Engineering Physics, Mianyang 621000, China

Corresponding author: Song Yu, kwungyusung@gmail.com ; Zhang Jian, jianzhang@uestc.edu.cn

Funds: Project supported by the Scientific Challenge Project, China (Grant No. TZ2016003-1)

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参考文献

[1]	Bernstein K, Frank D J, Gattiker A R 2006 IBM J. Res. Dev. 50 433 Google Scholar
[2]	Blair R R 1963 IEEE Trans. Nucl. Sci. 10 35 Google Scholar
[3]	Krieg J, Tuflinger T, Pease R 2001 NSREC Vancouver British Columbia, Canada, July 16–20, 2001 pp167–172
[4]	Pease R L, Combs W E, Johnston A, Carriere T, Poivey C, Gach A, Mc- Clure S 1996 IEEE REDW Indian Wells California, USA, July 19−23, 1996 pp28−34
[5]	Johnston A H, Lancaster C A 1979 IEEE Trans. Nucl. Sci. 26 4769 Google Scholar
[6]	Kruckmeyer K, McGee L, Brown B, Hughart D 2008 IEEE REDW Tucson Arizon, USA, July 14–18, 2008 pp110–116
[7]	Kruckmeyer K, McGee L, Brown B, Miller L 2009 RADECS 2009 Brugge, Belgium, September 14–18, 2009 pp586–592
[8]	Gorelick J L, Ladbury R, Kanchawa L 2004 IEEE Trans. Nucl. Sci. 51 3679 Google Scholar
[9]	Guillermin J, Sukhaseum N, Varotsou A, Privat A, Garcia P, VailléM, Thomas J C, Chatry N, Poivey C 2016 RADECS 2016 Bremen, Germany, September 19−23, 2016 pp1−7
[10]	Bozovich A N, Irom F 2017 IEEE REDW New Orleans, United States, July 17−21, 2017 pp1−8
[11]	Song Y, Zhou H, Cai X F 2020 ACS Appl. Mater. Interfaces 12 29993
[12]	Song Y, Wei S H 2020 ACS Appl. Electron. Mater. 2 3783 Google Scholar
[13]	Dressendorfer P V 1998 Tech. Rep. (Sandia National Labs., Albuquerque, NM, United States) pp1–9
[14]	McLean F B, Oldham T R 1987 Tech. Rep. (DTIC Document) pp1−8
[15]	McWhorter P, Winokur P 1986 Appl. Phys. Lett. 48 133 Google Scholar
[16]	Ortiz-Conde A, Sánchez F G, Liou J J, Cerdeira A, Estrada M, Yue Y 2002 Microelectron. Reliab. 42 583 Google Scholar
[17]	Ball D R, Schrimpf R D, Barnaby H J 2002 IEEE Trans. Nucl. Sci. 49 3185 Google Scholar
[18]	Li X J, Yang J, Chen H, Dong S, Lv G 2019 IEEE Trans. Nucl. Sci. 66 1612 Google Scholar
[19]	Winokur P S, Boesch H E, McGarrity Jr J M, McLean F B 1979 J. Appl. Phys. 50 3492 Google Scholar
[20]	Gaddum J H 1945 Nature 156 463 Google Scholar
[21]	Barnaby H, Vermeire B, Campola M 2015 IEEE Trans. Nucl. Sci. 62 1658 Google Scholar
[22]	Barnaby H, Smith S, Schrimpf R, Fleetwood D, Pease R 2002 IEEE Trans. Nucl. Sci. 49 2643 Google Scholar
[23]	Tolleson B S, Adell P, Rax B, Barnaby H, Privat A, Han X, Mahmud A, Livingston I 2018 IEEE Trans. Nucl. Sci. 65 1488 Google Scholar
[24]	Pierret R F, Neudeck G W 1987 Advanced Semiconductor Fundamentals (Vol. 6) (Massachusetts: Addison-Wesley Reading) pp123−235
[25]	McWhorter P, Winokur P 1986 Applied Physical Letters 48 133
[26]	Rowsey N L, Law M E, Schrimpf R D, Fleetwood D M, Tuttle B R, Pantelides S T 2011 IEEE Trans. Nucl. Sci. 58 2937 Google Scholar
[27]	Song Y, Zhang G, Liu Y, Zhou H, Zhong L, Dai G, Zuo X, Wei S H 2020 arXiv preprint arXiv 2008 04486

施引文献

图 1 GLPNP器件的结构示意图

Fig. 1. Structure of the GLPNP transistor.

下载: 全尺寸图片幻灯片

图 2 不同总剂量条件下GLPNP基极电流的分布特性

Fig. 2. Statistical characteristics of the base current of GLPNP under different total doses as indicated in each subfigure.

下载: 全尺寸图片幻灯片

图 3 分布参数　(a) $ \mu $和 (b)$ \sigma $ 随总剂量的变化规律

Fig. 3. Statistical parameters (a) $ \mu $ and (b) $ \sigma $ as a function of the total dose.

下载: 全尺寸图片幻灯片

图 4 不同总剂量条件下N_ot的分布特性

Fig. 4. Statistical characteristics of N_ot under different total dose irradiations.

下载: 全尺寸图片幻灯片

图 5 不同总剂量条件下N_it分布特性

Fig. 5. Statistical characteristics of N_it under different total dose irradiations.

下载: 全尺寸图片幻灯片

表 1 GLPNP的结构尺寸参数

Table 1. Structure parameters of the GLPNP transistor.

序号	结构	尺寸参数
1	发射极尺寸	直径 = 9 μm
2	基区尺寸	外内半径差12 μm 空心圆环
3	集电极尺寸	面积 = 1449.135 μm²
4	发射极与集电极距离 (EC间距)	L = 12 μm
5	集电极与基区距离 (CB间距)	L = 14 μm

下载: 导出CSV

[1]	Bernstein K, Frank D J, Gattiker A R 2006 IBM J. Res. Dev. 50 433 Google Scholar
[2]	Blair R R 1963 IEEE Trans. Nucl. Sci. 10 35 Google Scholar
[3]	Krieg J, Tuflinger T, Pease R 2001 NSREC Vancouver British Columbia, Canada, July 16–20, 2001 pp167–172
[4]	Pease R L, Combs W E, Johnston A, Carriere T, Poivey C, Gach A, Mc- Clure S 1996 IEEE REDW Indian Wells California, USA, July 19−23, 1996 pp28−34
[5]	Johnston A H, Lancaster C A 1979 IEEE Trans. Nucl. Sci. 26 4769 Google Scholar
[6]	Kruckmeyer K, McGee L, Brown B, Hughart D 2008 IEEE REDW Tucson Arizon, USA, July 14–18, 2008 pp110–116
[7]	Kruckmeyer K, McGee L, Brown B, Miller L 2009 RADECS 2009 Brugge, Belgium, September 14–18, 2009 pp586–592
[8]	Gorelick J L, Ladbury R, Kanchawa L 2004 IEEE Trans. Nucl. Sci. 51 3679 Google Scholar
[9]	Guillermin J, Sukhaseum N, Varotsou A, Privat A, Garcia P, VailléM, Thomas J C, Chatry N, Poivey C 2016 RADECS 2016 Bremen, Germany, September 19−23, 2016 pp1−7
[10]	Bozovich A N, Irom F 2017 IEEE REDW New Orleans, United States, July 17−21, 2017 pp1−8
[11]	Song Y, Zhou H, Cai X F 2020 ACS Appl. Mater. Interfaces 12 29993
[12]	Song Y, Wei S H 2020 ACS Appl. Electron. Mater. 2 3783 Google Scholar
[13]	Dressendorfer P V 1998 Tech. Rep. (Sandia National Labs., Albuquerque, NM, United States) pp1–9
[14]	McLean F B, Oldham T R 1987 Tech. Rep. (DTIC Document) pp1−8
[15]	McWhorter P, Winokur P 1986 Appl. Phys. Lett. 48 133 Google Scholar
[16]	Ortiz-Conde A, Sánchez F G, Liou J J, Cerdeira A, Estrada M, Yue Y 2002 Microelectron. Reliab. 42 583 Google Scholar
[17]	Ball D R, Schrimpf R D, Barnaby H J 2002 IEEE Trans. Nucl. Sci. 49 3185 Google Scholar
[18]	Li X J, Yang J, Chen H, Dong S, Lv G 2019 IEEE Trans. Nucl. Sci. 66 1612 Google Scholar
[19]	Winokur P S, Boesch H E, McGarrity Jr J M, McLean F B 1979 J. Appl. Phys. 50 3492 Google Scholar
[20]	Gaddum J H 1945 Nature 156 463 Google Scholar
[21]	Barnaby H, Vermeire B, Campola M 2015 IEEE Trans. Nucl. Sci. 62 1658 Google Scholar
[22]	Barnaby H, Smith S, Schrimpf R, Fleetwood D, Pease R 2002 IEEE Trans. Nucl. Sci. 49 2643 Google Scholar
[23]	Tolleson B S, Adell P, Rax B, Barnaby H, Privat A, Han X, Mahmud A, Livingston I 2018 IEEE Trans. Nucl. Sci. 65 1488 Google Scholar
[24]	Pierret R F, Neudeck G W 1987 Advanced Semiconductor Fundamentals (Vol. 6) (Massachusetts: Addison-Wesley Reading) pp123−235
[25]	McWhorter P, Winokur P 1986 Applied Physical Letters 48 133
[26]	Rowsey N L, Law M E, Schrimpf R D, Fleetwood D M, Tuttle B R, Pantelides S T 2011 IEEE Trans. Nucl. Sci. 58 2937 Google Scholar
[27]	Song Y, Zhang G, Liu Y, Zhou H, Zhong L, Dai G, Zuo X, Wei S H 2020 arXiv preprint arXiv 2008 04486

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