多孔GaN/CuZnS异质结窄带近紫外光电探测器

郭越; 孙一鸣; 宋伟东

doi:10.7498/aps.71.20220990

摘要

窄带光电探测系统在荧光检测、人工视觉等领域具有广泛应用. 为了实现对特殊波段的窄带光谱探测, 传统上需要将宽带探测器和光学滤波片集成. 但是, 随着检测技术的发展, 人们对探测系统的功耗、尺寸、成本等方面也提出了更高要求, 结构复杂、成本高的传统窄带光电探测器应用受到限制. 于是, 本文展示了一种基于多孔GaN/CuZnS异质结的无滤波、窄带近紫外光电探测器. 通过光电化学刻蚀和水浴生长方法, 分别制备了具有低缺陷密度的多孔GaN薄膜和高空穴电导率的CuZnS薄膜, 并构建了多孔GaN/CuZnS异质结近紫外光电探测器. 得益于GaN的多孔结构和CuZnS的光学滤波作用, 器件在–2 V偏压、370 nm紫外光照下, 光暗电流比超过4个数量级; 更重要的是, 器件具有超窄带近紫外光响应(半峰宽<8 nm, 峰值为370 nm). 此外, 该探测器的峰值响应度、外量子效率和比探测率分别达到了0.41 A/W, 138.6%和9.8×10¹² Jones. 这些优异的器件性能显示了基于多孔GaN/CuZnS异质结的近紫外探测器在窄光谱紫外检测领域具有广阔的应用前景.

关键词:

Abstract

Narrowband photodetection systems are widely used in fluorescence detection, artificial vision and other fields. In order to realize the narrow spectral detection of special band, it is traditionally necessary to integrate broadband detectors with optical filters. However, with the development of detection technology, higher requirements have also been placed on the power consumption, size, and cost of the detection system, and the applications of traditional narrowband photodetectors with complex structures and high costs are limited. Thus, a filterless, narrowband near-ultraviolet photodetector based on a porous GaN/CuZnS heterojunction is demonstrated. The porous GaN thin films with low defect density and CuZnS thin films with high hole conductivity are fabricated by photoelectrochemical etching and water bath growth methods, respectively, and the porous GaN/CuZnS heterojunction near-ultraviolet photodetectors are thus fabricated. Benefiting from the porous structure of GaN and the optical filtering effect of CuZnS, the photo-dark current ratio of the device exceeds four orders of magnitudes under –2 V bias and 370 nm light illumination; more importantly, the device has an ultra-narrowband near-ultraviolet photoresponse with a full width at half maximum of <8 nm (peak at 370 nm). In addition, the peak responsivity, external quantum efficiency and specific detectivity reach 0.41 A/W, 138.6% and 9.8×10¹² Jones, respectively. These excellent device performances show that the near-ultraviolet photodetectors based on porous GaN/CuZnS heterojunctions have broad application prospects in the field of narrow-spectrum ultraviolet photodetection.

Keywords:

作者及机构信息

1.
五邑大学应用物理与材料学院, 江门　529000

2.
华南师范大学半导体科学与技术学院, 广州　510631

通信作者: 孙一鸣, yimingsun@m.scnu.edu.cn ; 宋伟东, wdsongwyu@163.com

基金项目: 广东省重点领域研发计划(批准号: 2020B010174004)和广东省基础与应用基础研究基金(批准号: 2020A1515110185)资助的课题

Authors and contacts

1.
School of Applied Physics and Materials, Wuyi University, Jiangmen 529000, China

2.
School of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, China

Corresponding author: Sun Yi-Ming, yimingsun@m.scnu.edu.cn ; Song Wei-Dong, wdsongwyu@163.com

Funds: Project supported by the Key-Area Research and Development Program of Guangdong Province, China (Grant No. 2020B010174004) and the Guangdong Basic and Applied Basic Research Foundation, China (Grant No. 2020A1515110185).

文章全文 : translate this paragraph

参考文献

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施引文献

图 1 (a)多孔GaN、(b)平面GaN以及(c) CuZnS薄膜的SEM表征; (d) CuZnS薄膜的EDX分析

Fig. 1. SEM characterization of (a) porous GaN, (b) planar GaN and (c) CuZnS film; (d) EDX analysis of the CuZnS films.

下载: 全尺寸图片幻灯片

图 2 (a)多孔GaN薄膜和CuZnS薄膜的反射率图谱; (b) CuZnS薄膜的衍射图谱; 多孔GaN薄膜和(c)多孔GaN、CuZnS薄膜以及异质结的紫外-可见吸收光谱(插图为CuZnS的Tauc图)

Fig. 2. (a) Reflectance patterns of porous GaN and CuZnS films; (b) XRD patterns of CuZnS films; (c) UV-vis absorption spectrum of porous GaN, CuZnS films and GaN/CuZnS heterojunction; inset in (c) shows the Tauc plot of the CuZnS films.

下载: 全尺寸图片幻灯片

图 3 (a)多孔GaN/CuZnS异质结器件的I-V特性曲线(插图为多孔GaN/CuZnS异质结器件结构示意图); (b) CuZnS器件和(c)多孔GaN器件的I-V特性曲线, (b)和(c)中的插图分别显示了器件在370 nm光开关周期下的I-t曲线和相应的器件结构

Fig. 3. I-V characteristics of the (a) porous GaN/CuZnS heterojunction PD, inset in (a) shows the schematic illustration of the porous GaN/CuZnS structure; I-V characteristics of the (b) CuZnS PD devices and (c) porous GaN PD, insets in (b) and (c) show the I-t curves under switching 370 nm light illumination and corresponding device structures, respectively.

下载: 全尺寸图片幻灯片

图 4 不同刻蚀电压(V = 10, 15, 25 V)所制备的光电探测器的(a)光电流及光暗电流比、(b)响应度、(c)比探测率, 图(c)插图为器件的外量子效率

Fig. 4. (a) Photocurrent and light-to-dark ratio, (b) responsivity and (c) specific detectivity of PDs prepared for different etching voltages (V = 10, 15, 25 V); inset in (c) shows the external quantum efficiency of PDs.

下载: 全尺寸图片幻灯片

图 5 (a)不同强度的370 nm光照下多孔GaN/CuZnS异质结光电探测器的I-V特性; (b)光强和光电流相应的线性拟合曲线; (c)响应度和比探测率随光强变化; (d)多孔GaN/CuZnS异质结的能带示意图

Fig. 5. (a) Light intensity dependent I-V characteristics of porous GaN/CuZnS heterojunction PD under 370 nm light illumination; (b) light intensity dependent photocurrent and the corresponding linear fitting curve; (c) responsivity and detectivity as a function of light intensity; (d) the schematic energy band diagram of the porous GaN/CuZnS heterojunction.

下载: 全尺寸图片幻灯片

表 1 CuZnS薄膜和多孔GaN的霍尔效应测试数据

Table 1. Hall-effect test data of CuZnS films and porous GaN.

Sample	Temp./K	Bulk Con./cm^–3	Resistivity/(Ω·cm)	Conductivity/ (Ω·cm)^–1	Mobility/ (cm²·(V·s)^–1)
CuZnS	295	5.24×10¹⁸	0.324	3.08	36.7
Porous GaN	295	1.39×10¹⁷	0.127	7.89	355

下载: 导出CSV

表 2 无滤波器、窄带PD的典型参数比较

Table 2. Comparison of typical parameters of filter-free, narrowband PDs.

Active materials	Peak wavelength/ nm	FWHM/nm	Bias/V	EQE/%	R/ (mA·W^–1)	D^*/ Jones	On/off ratio	Ref.
PC₇₁BM:PbS	890	50	–7	183	1310	8.0×10¹¹	～10⁴	[37]
Hybrid perovskite	780	28	0	12.1	76	2.65×10¹²	–	[45]
P₃HT:PC₇₁BM	650	29	–10	49.0	255	1.3×10¹¹	～10²	[46]
P₃HT:PCBM:CdTe	660	80	–6	～200	～1064	7.3×10¹¹	～10⁴	[47]
Organic ISQ	680	80	–2	15.0	82.3	3.2×10¹²	1.8×10³	[48]
p-NiO/n-ZnO	380	30	0	0.5	1.4	—	—	[49]
Porous GaN/CuZnS	370	8	–2	136.8	413.7	9.8×10¹²	>10⁴	This work

下载: 导出CSV

[1]	Wang T, Liang H, Han Z, Sui Y, Mei Z 2021 Adv. Mater. Technol. 6 2000945 Google Scholar
[2]	Wang S, Wu C, Wu F, Zhang F, Liu A, Zhao N, Guo D 2021 Sens. Actuators, A 330 112870 Google Scholar
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[25]	Rajamani S, Arora K, Konakov A, Belov A, Korolev D, Nikolskaya A, Mikhaylov A, Surodin S, Kryukov R, Nikolitchev D, Sushkov A, Pavlov D, Tetelbaum D, Kumar M, Kumar M 2018 Nanotechnology 29 305603 Google Scholar
[26]	Lan Z, Lau Y S, Wang Y, Xiao Z, Ding L, Luo D, Zhu F 2020 Adv. Opt. Mater. 8 2001388 Google Scholar
[27]	Qin Z, Song D, Xu Z, Qiao B, Huang D, Zhao S 2020 Org. Electron. 76 105417 Google Scholar
[28]	Wang J, Xiao S, Qian W, Zhang K, Yu J, Xu X, Wang G, Zheng S, Yang S 2021 Adv. Mater. 33 2005557 Google Scholar
[29]	Li J, Yang C, Liu L, Cao H, Lin S, Xi X, Li X, Ma Z, Wang K, Patanè A, Zhao L 2020 Adv. Opt. Mater. 8 1901276 Google Scholar
[30]	Guo Y, Song W, Liu Q, Sun Y, Chen Z, He X, Zeng Q, Luo X, Zhang R, Li S 2022 J. Mater. Chem. C 10 5116 Google Scholar
[31]	Wang X, Pan Y, Xu Y, Zhao J, Li Y, Li Q, Chen J, Zhao Z, Zhang X, Elemike E E, Onwudiwe D C, Bae B S, Lei W 2022 Adv. Electron. Mater. 8 2200178 Google Scholar
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[33]	Zhang Y, Song W 2021 J. Mater. Chem. C 9 4799 Google Scholar
[34]	Zhang Y, Xu X, Fang X 2019 InfoMat 1 542 Google Scholar
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[36]	Zheng Y, Li Y, Tang X, Wang W, Li G 2020 Adv. Opt. Mater. 8 2000197 Google Scholar
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[41]	Zheng L, Hu K, Teng F, Fang X 2017 Small 13 1602448 Google Scholar
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