基于MgO磁性隧道结的五种隧穿磁电阻线性传感单元性能比较

韩秀峰; 张雨; 丰家峰; 陈川; 邓辉; 黄辉; 郭经红; 梁云; 司文荣; 江安烽; 魏红祥

doi:10.7498/aps.71.20221278

摘要

磁性隧道结经过结构优化和性能提升已成功应用于磁存储、磁传感、磁逻辑等多种自旋电子学器件中. 磁传感是利用磁性隧道结的自由层和钉扎层之间特殊的磁结构来实现隧穿磁电阻(TMR)随外加磁场变化而呈现的线性输出. 迄今为止, 人们基于MgO磁性隧道结已经研发出五种TMR线性传感单元, 分别是人工间接双交换耦合型、磁场偏置型、面内/面外垂直型、超顺磁型的TMR线性传感单元. 本文梳理了这五种TMR线性传感单元并对它们的磁传感性能进行了系统比较, 为人们探索和发现磁敏传感器的相关应用提供了帮助.

关键词:

Abstract

Magnetic tunnel junction (MTJ) has been successfully used in spintronic devices, such as magnetoresistive random access memory, tunneling magnetoresistance (TMR) sensor, magnetic logic. In the TMR sensor a special magnetic structure is used between the free layer and the pinned layer of an MTJ to realize a linear output. So far, five types of TMR linear sensing units (TMR-LSNs) have been developed based on MgO MTJs, which are artificial-indirect-double-exchange-coupling-, magnetic-field-biased-, in-plane-, perpendicular-, and superparamagnetic-TMR-LSN, respectively. In this paper, the five types of TMR-LSNs are combed and their magnetic sensing performances are systematically compared with each other. First, the five types of TMR-LSNs each have a linear resistance response to the external magnetic field with a changeable sensitivity, a linear field range and a low frequency noise level. Second, in the five types of TMR-LSNs different magnetic structures are used to realize the same aim that is to obtain the optimized performance parameters, which is of significance for putting TMR sensors into practical applications. Third, the five types of TMR-LSNs are suitable for different application scenarios due to their respective performance parameters. Therefore, we believe that our summarized discussion in this paper will help people to explore and find the relevant applications of TMR sensors based on the five types of TMR-LSNs.

Keywords:

magnetic tunnel junction /
tunneling magnetoresistance linear sensing unit /
magnetoresistive sensors

作者及机构信息

1.
中国科学院物理研究所, 北京凝聚态物理国家研究中心, 北京　100190

2.
国网智能电网研究院有限公司, 北京　102209

3.
国网上海市电力公司, 上海　200437

通信作者: 韩秀峰, xfhan@iphy.ac.cn

基金项目: 国家电网有限公司总部管理科技项目“新型高灵敏度、高可靠性磁敏传感机理研究及材料制备”(批准号: 5700-202058381A-0-0-00)资助的课题.

Authors and contacts

1.
Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

2.
State Grid Smart Grid Research Institute Co., Ltd., Beijing 102209, China

3.
State Grid Shanghai Electric Power Company, Shanghai 200437, China

Corresponding author: Han Xiu-Feng, xfhan@iphy.ac.cn

Funds: Project supported by the State Grid Corporation of China (Grant No. 5700-202058381A-0-0-00).

文章全文 : translate this paragraph

参考文献

[1]	Jullière M 1975 Phys. Lett. A 54 225 Google Scholar
[2]	Miyazaki T, Tezuka N 1995 J. Magn. Magn. Mater. 139 L231 Google Scholar
[3]	Moodera J S, Kinder L R, Wong T M, Meservey R 1995 Phys. Rev. Lett. 74 3273 Google Scholar
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施引文献

图 1 基于单一MTJ结构的五种TMR线性传感单元的示意图, 其中反铁磁性层、铁磁性金属层(超顺磁性层)、势垒层是构成MTJ结构的主要材料层,　(d) 图中的弹簧结构代表的是人工交换耦合结构的交换相互作用强度, 它决定了人工间接双交换耦合型的TMR线性传感单元的诸多性能参数

Fig. 1. Sketch of five TMR linear sensing units based on a single MTJ, the antiferromagnetic layer, ferromagnetic metal layer (superparamagnetic layer) and barrier layer are the main layers of an MTJ structure. The spring structure in Fig.(d) represents the exchange interaction strength of the synthetic exchange-coupling structure, which determines many performance parameters of the synthetic indirect-double-exchange-coupling TMR linear sensing unit.

下载: 全尺寸图片幻灯片

图 2 MTJ材料结构, TMR线性传感单元和TMR磁敏传感器的性能参数关系图

Fig. 2. Performance parameter diagram of an MTJ, a TMR linear sensing unit, and a TMR magnetoresistive sensor.

下载: 全尺寸图片幻灯片

表 1 基于单一 MgO MTJ的五种TMR线性传感单元的性能参数

Table 1. Performance parameters of five TMR linear sensing units based on a single MTJ.

TMR磁敏传感器	类型名称 (基于单一MTJ)	TMR比值/%	灵敏度/ (%·Oe^–1)	线性磁场范围/Oe	噪声指数/ (nT@10 Hz)	非线性度	探测层厚度 t_CoFe(Si)B/nm
种类I	超顺磁型	108	6.08	8	90	—	1^[27]
种类II	面外垂直型(含一垂直磁矩)	> 52	0.02	600	—	< 1%	1.36^[18]
种类III	面内垂直型	130	3—4	10	4.6	—	3^[21]
种类IV¹	人工间接双交换耦合型	> 200	2.6	~60	90	—	3^[19]
种类IV²	人工间接双交换耦合型	~200	3.9	~28	4.5	—	30^[26]
种类V	磁场偏置型@H_B=50 Oe	~180	~1.3	~75	15	—	30^[26]

下载: 导出CSV

[1]	Jullière M 1975 Phys. Lett. A 54 225 Google Scholar
[2]	Miyazaki T, Tezuka N 1995 J. Magn. Magn. Mater. 139 L231 Google Scholar
[3]	Moodera J S, Kinder L R, Wong T M, Meservey R 1995 Phys. Rev. Lett. 74 3273 Google Scholar
[4]	Wang D, Nordman C, Daughton J M, Qian Z, Fink J 2004 IEEE Trans. Magn. 40 2269 Google Scholar
[5]	Butler W H, Zhang X-G, Schulthess T C, MacLaren J M 2001 Phys. Rev. B 63 054416 Google Scholar
[6]	Mathon J, Umersky A 2001 Phys. Rev. B 63 220403 Google Scholar
[7]	Parkin S S P, Kaiser C, Panchula A, Rice P M, Hughes B, Samant M, Yang S H 2004 Nat. Mater. 3 862 Google Scholar
[8]	Yuasa S, Nagahama T, Fukushima A, Suzuki Y, Ando K 2004 Nat. Mater. 3 868 Google Scholar
[9]	Han X F, Oogane M, Kubota H, Ando Y, Miyazaki T 2000 Appl. Phys. Lett. 77 283 Google Scholar
[10]	Wei H X, Qin Q H, Ma M, Sharif R, Han X F 2007 J. Appl. Phys. 101 09B501 Google Scholar
[11]	Oleinik I I, Tsymbal E Y, Pettifor D G 2000 Phys. Rev. B 62 3952 Google Scholar
[12]	Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F, Ohno H 2008 Appl. Phys. Lett. 93 082508 Google Scholar
[13]	Feng J F, Feng G, Coey J M D, Han X F, Zhan W S 2007 Appl. Phys. Lett. 91 102505 Google Scholar
[14]	Zhang J, Zhang X G, Han X F 2012 Appl. Phys. Lett. 100 222401 Google Scholar
[15]	Kurt H, Rode K, Oguz K, Boese M, Faulkner C C, Coey J M D 2010 Appl. Phys. Lett. 96 262501 Google Scholar
[16]	Wang W X, Yang Y, Naganuma H, Ando Y, Yu R C, Han X F 2011 Appl. Phys. Lett. 99 012502 Google Scholar
[17]	Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan H. D, Endo M, Kanai S, Hayakawa J, Matsukura F, Ohno H 2010 Nat. Mater. 9 721 Google Scholar
[18]	Zeng Z M, Amiri P K, Katine J A, Langer J, Wang K L, Jiang H W 2012 Appl. Phys. Lett. 101 062412 Google Scholar
[19]	Chen J Y, Feng J F, Coey J M D 2012 Appl. Phys. Lett. 100 142407 Google Scholar
[20]	Yuan Z H, Huang L, Feng J F, Wen Z C, Li D L, Han X F, Nakano T, Yu T, Naganuma H 2015 J. Appl. Phys. 118 053904 Google Scholar
[21]	Chen J Y, Carroll N, Feng J F, Coey J M D 2012 Appl. Phys. Lett. 101 262402 Google Scholar
[22]	Wei H X, Qin Q H, Wen Z C, Han X F, Zhang X G 2009 Appl. Phys. Lett. 94 172902 Google Scholar
[23]	中国工程科技知识中心 2021知领˙报告 (2) 第2页 Analysis and Countermeasure Research on Smart Sensor Market in China 2021 Know and Report(2) p2 (in Chinese)
[24]	Silva A V, Leitao D C, Valadeiro J, Amaral J, Freitas P P, Cardoso S 2015 Eur. Phys. J. Appl. Phys. 72 10601 Google Scholar
[25]	Yu G Q, Feng J F, Kurt H, Liu H F, Han X F, Coey J M D 2012 J. Appl. Phys. 111 113906 Google Scholar
[26]	Huang L, Yuan Z H, Tao B S, Wan C H, Guo P, Zhang Q T, Yin L, Feng J F, Nakano T, Naganuma H, Liu H F, Yan Y, Han X F 2017 J. Appl. Phys. 122 113903 Google Scholar
[27]	Mazumdar D, Shen W F Liu X Y, Schrag B D, Carter M, Xiao G 2008 J. Appl. Phys. 103 113911 Google Scholar
[28]	Chaves R C, Cardoso S, Ferreira R, Freitas P P 2011 J. Appl. Phys. 109 07E506 Google Scholar
[29]	Yin X, Yang Y, Liu Y, Hua J, Sokolov A Ewing D, Rego P J D, Gao K, Liou S 2019 Proc. SPIE 11090 110903H

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