强关联电子相变氧化物材料及多场调控

周轩弛; 李海帆

doi:10.7498/aps.73.20240289

摘要

外场激励通过调控强关联氧化物中自由度间的关联耦合作用, 触发其发生多重莫特电子相变和轨道重构, 在强关联电子相变氧化物体系中发现了丰富的新奇物性和量子转变, 为构筑新型类脑神经元逻辑器件、磁电耦合器件及能量转换器件奠定基础, 引起了凝聚态物理领域的广泛关注. 本工作系统地回顾了国内外科研团队在强关联氧化物电子相变特性多场调控领域的研究进展, 旨在凸显离子、应力场和栅极电场等新型功能调控自由度在强关联氧化物电子相变特性调控和新型功能特性设计中的关键作用, 阐明强关联氧化物中微观自由度的关联耦合作用对其宏观关联电子相变特性的基础调控规律, 为实现强关联氧化物电子相变特性的可控设计与精准调控提供理论依据, 期望利用多物理场的调控作用在强关联电子相变氧化物材料体系中发现更多的新物理、新物性、新器件和新应用.

关键词:

Abstract

External-field-triggered multiple electronic phase transitions within correlated oxides open up a new paradigm to explore exotic physical functionalities and new quantum transitions via regulating the electron correlations and the interplay in the degrees of freedom, which makes the multidisciplinary fields have the promising application prospects, such as neuromorphic computing, magnetoelectric coupling, smart windows, bio-sensing, and energy conversion. This review presents a comprehensive picture of regulating the electronic phase transitions for correlated oxides via multi-field covering the VO₂ and ReNiO₃, thus highlighting the critical role of external field in exploring the exotic physical property and designing new quantum states. Beyond conventional semiconductors, the complex interplay in the charge, lattice, orbital and spin degrees of freedom within correlated oxides triggers abundant correlated physical functionalities that are rather susceptible to the external field. For example, hydrogen-related electron-doping Mottronics makes it possible to discover new electronic phase and magnetic ground states in the hydrogen-related phase diagram of correlated oxides. In addition, filling-controlled Mottronics by using hydrogenation triggers multiple orbital reconfigurations for correlated oxides away from the correlated electronic ground state that results in new quantum transitions via directly manipulating the d-orbital configuration and occupation, such as unconventional Ni-based superconductivity. The transition metals of correlated oxides are generally substituted by dopants to effectively adjust the electronic phase transitions via introducing the carrier doping and/or lattice strain. Imparting an interfacial strain to correlated oxides introduces an additional freedom to manipulate the electronic phase transition via distorting the lattice framework, owing to the interplay between charge and lattice degrees of freedom. In recent years, the polarization field associated with BiFeO₃ or PMN-PT material triggered by a cross-plane electric field has been used to adjust the electronic phase transition of correlated oxides that enriches the promising correlated electronic devices. The exotic physical phenomenon as discovered in the correlated oxides originates from the non-equilibrium states that are triggered by imparting external fields. Nevertheless, the underneath mechanism as associated with the regulation in the electronic phase transitions of correlated oxides is still in a long-standing puzzle, owing to the strong correlation effect. As a representative case, hydrogen-associated Mottronic transition introduces an additional ion degree of freedom into the correlated oxides that is rather difficult to decouple from the correlated system. In addition, from the perspective of material synthesis, the above-mentioned correlated oxides are expected to be compatible with conventional semiconducting process, by which the prototypical correlated electronic devices can be largely developed. The key point that accurately adjusts and designs the electronic phase transitions for correlated oxides via external fields is presented to clarify the basic relationship between the microscopic degrees of freedom and macroscopic correlated physical properties. On the basis, the multiple electronic phase transitions as triggered by external field within correlated oxides provide new guidance for designing new functionality and interdisciplinary device applications.

Keywords:

strongly correlated oxides /
electronic phase transition /
correlated physical property regulation /
metal-to-insulator transition

作者及机构信息

周轩弛^1,2,
李海帆³

1.
山西师范大学化学与材料科学学院, 磁性分子与磁信息材料教育部重点实验室, 太原　030031

2.
山西师范大学材料科学研究院, 先进永磁材料与技术省部共建协同创新中心, 太原　030031

3.
香港城市大学化学系, 香港　999077

通信作者: 周轩弛, xuanchizhou@sxnu.edu.cn

基金项目: 国家自然科学基金(批准号: 12174237, 52171183)资助的课题.

Authors and contacts

Zhou Xuan-Chi^1,2,
Li Hai-Fan³

1.
Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Taiyuan 030031, China

2.
Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Research Institute of Materials Science, Shanxi Normal University, Taiyuan 030031, China

3.
Department of Chemistry, City University of Hong Kong, Hong Kong 999077, China

Corresponding author: Zhou Xuan-Chi, xuanchizhou@sxnu.edu.cn

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 12174237, 52171183).

文章全文 : translate this paragraph

参考文献

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34 Google Scholar
[2]	Li L L, Wang M, Zhou Y D, Zhang Y, Zhang F, Wu Y S, Wang Y J, Lyu Y J, Lu N P, Wang G P, Peng H N, Shen S C, Du Y G, Zhu Z H, Nan C W, Yu P 2022 Nat. Mater. 21 1246 Google Scholar
[3]	Lu N, Zhang Z, Wang Y, Li H B, Qiao S, Zhao B, He Q, Lu S, Li C, Wu Y, Zhu M, Lyu X, Chen X, Li Z, Wang M, Zhang J, Tsang S C, Guo J, Yang S, Zhang J, Deng K, Zhang D, Ma J, Ren J, Wu Y, Zhu J, Zhou S, Tokura Y, Nan C W, Wu J, Yu P 2022 Nat. Energy 7 1208 Google Scholar
[4]	Zhou X, Li H, Jiao Y, Zhou G, Ji H, Jiang Y, Xu X 2024 Adv. Funct. Mater. 2316536 Google Scholar
[5]	Zhou X, Li H, Meng F, Mao W, Wang J, Jiang Y, Fukutani K, Wilde M, Fugetsu B, Sakata I, Chen N, Chen J 2022 J. Phys. Chem. Lett. 13 8078 Google Scholar
[6]	Wang S, Jiang T, Meng Y, Yang R, Tan G, Long Y 2021 Science 374 1501 Google Scholar
[7]	Tang K, Dong K, Li J, Gordon M P, Reichertz F G, Kim H, Rho Y, Wang Q, Lin C Y, Grigoropoulos C P, Javey A, Urban J J, Yao J, Levinson R, Wu J 2021 Science 374 1504 Google Scholar
[8]	Zhang H T, Park T J, Islam A, et al. 2022 Science 375 533 Google Scholar
[9]	Lee D, Chung B, Shi Y, et al. 2018 Science 362 1037 Google Scholar
[10]	劳斌, 郑轩, 李晟, 汪志明 2023 物理学报 72 097702 Google Scholar Lao B, Zheng X, Li S, Wang Z M 2023 Acta Phys. Sin. 72 097702 Google Scholar
[11]	Zhou X, Wu Y, Yan F, Zhang T, Ke X, Meng K, Xu X, Li Z, Miao J, Chen J, Jiang Y 2021 Ceram. Int. 47 25574 Google Scholar
[12]	Gao L, Wang H, Meng F, Peng H, Lyu X, Zhu M, Wang Y, Lu C, Liu J, Lin T, Ji A, Zhang Q, Gu L, Yu P, Meng S, Cao Z, Lu N 2023 Adv. Mater. 2300617 Google Scholar
[13]	Chen J K, Mao W, Ge B H, Wang J, Ke X Y, Wang V, Wang Y P, Dobeli M, Geng W T, Matsuzaki H, Shi J, Jiang Y 2019 Nat. Commun. 10 694 Google Scholar
[14]	Zhang Z, Schwanz D, Narayanan B, et al. 2018 Nature 553 68 Google Scholar
[15]	Zhou Y, Guan X F, Zhou H, Ramadoss K, Adam S, Liu H J, Lee S, Shi J, Tsuchiya M, Fong D D, Ramanathan S 2016 Nature 534 231 Google Scholar
[16]	Deng S, Yu H, Park T J, Islam A N M N, Manna S, Pofelski A, Wang Q, Zhu Y, Sankaranarayanan S K R S, Sengupta A, Ramanathan S 2023 Sci. Adv. 9 eade4838 Google Scholar
[17]	Li D F, Lee K, Wang B Y, Osada M, Crossley S, Lee H R, Cui Y, Hikita Y, Hwang H Y 2019 Nature 572 624 Google Scholar
[18]	Ding X, Tam C C, Sui X, Zhao Y, Xu M, Choi J, Leng H, Zhang J, Wu M, Xiao H, Zu X, Garcia-Fernandez M, Agrestini S, Wu X, Wang Q, Gao P, Li S, Huang B, Zhou K J, Qiao L 2023 Nature 615 50 Google Scholar
[19]	Sun H, Huo M, Hu X, Li J, Liu Z, Han Y, Tang L, Mao Z, Yang P, Wang B, Cheng J, Yao D X, Zhang G M, Wang M 2023 Nature 621 493 Google Scholar
[20]	Lu N P, Zhang P F, Zhang Q H, Qiao R M, He Q, Li H B, Wang Y J, Guo J W, Zhang D, Duan Z, Li Z L, Wang M, Yang S Z, Yan M Z, Arenholz E, Zhou S Y, Yang W L, Gu L, Nan C W, Wu J, Tokura Y, Yu P 2017 Nature 546 124 Google Scholar
[21]	Aetukuri N B, Gray A X, Drouard M, Cossale M, Gao L, Reid A H, Kukreja R, Ohldag H, Jenkins C A, Arenholz E, Roche K P, Dürr H A, Samant M G, Parkin S S P 2013 Nat. Phys. 9 661 Google Scholar
[22]	Zhang Z, Zhang L, Zhou Y, Cui Y, Chen Z, Liu Y, Li J, Long Y, Gao Y 2023 Chem. Rev. 123 7025 Google Scholar
[23]	Yajima T, Nishimura T, Toriumi A 2015 Nat. Commun. 6 10104 Google Scholar
[24]	Victor J L, Gaudon M, Salvatori G, Toulemonde O, Penin N, Rougier A 2021 J. Phys. Chem. Lett. 12 7792 Google Scholar
[25]	Suleiman A O, Mansouri S, Margot J, Chaker M 2022 Appl. Surf. Sci. 571 151267 Google Scholar
[26]	Sakai E, Yoshimatsu K, Shibuya K, Kumigashira H, Ikenaga E, Kawasaki M, Tokura Y, Oshima M 2011 Phys. Rev. B 84 195132 Google Scholar
[27]	Liu K, Lee S, Yang S, Delaire O, Wu J 2018 Mater. Today 21 875 Google Scholar
[28]	Li H F, Meng F Q, Bian Y, Zhou X C, Wang J U, Xu X G, Jiang Y, Chen N F, Chen J K 2023 J. Mater. Sci. Technol. 148 235 Google Scholar
[29]	Li H F, Wang Y Z, Zhang H, Fang X H, Zhou X C, Nie K Q, Xu X G, Jiang Y, Chen N F, Chen J K 2022 Appl. Phys. Lett. 121 253901 Google Scholar
[30]	Chen J, Li H, Wang J, Ke X, Ge B, Chen J, Dong H, Jiang Y, Chen N 2020 J. Mater. Chem. A 8 13630 Google Scholar
[31]	Catalano S, Gibert M, Fowlie J, Iñiguez J, Triscone J M, Kreisel J 2018 Rep. Prog. Phys. 81 046501 Google Scholar
[32]	Catalan G 2008 Phase Transitions 81 729 Google Scholar
[33]	Chen J 2023 Chin. Sci. Bull. 68 100 Google Scholar
[34]	Markiewicz E, Bujakiewicz-Koronska R, Budziak A, Kalvane A, Nalecz D M 2014 Phase Transitions 87 1060 Google Scholar
[35]	Kozlenko D P, Belik A A, Kichanov S E, Mirebeau I, Sheptyakov D V, Strässle T, Makarova O L, Belushkin A V, Savenko B N, Takayama-Muromachi E 2010 Phys. Rev. B 82 014401 Google Scholar
[36]	Schiffer P, Ramirez A P, Bao W, Cheong S W 1995 Phys. Rev. Lett. 75 3336 Google Scholar
[37]	Song Q, Doyle S, Pan G A, et al. 2023 Nat. Phys. 19 522 Google Scholar
[38]	Yajima T, Nishimura T, Toriumi A 2017 Small 13 1603113 Google Scholar
[39]	Asayesh-Ardakani H, Nie A M, Marley P M, et al. 2015 Nano Lett. 15 7179 Google Scholar
[40]	Zhou J Y, Xie M Z, Cui A Y, Zhou B, Jiang K, Shang L Y, Hu Z G, Chu J H 2018 ACS Appl. Mater. Interfaces 10 30548 Google Scholar
[41]	Rao C N R, Natarajan M, Subba Rao G V, Loehman R E 1971 J. Phys. Chem. Solids 32 1147 Google Scholar
[42]	Zhou X, Cui Y, Shang Y, Li H, Wang J, Meng Y, Xu X, Jiang Y, Chen N, Chen J 2023 J. Phys. Chem. C 127 2639 Google Scholar
[43]	Zhou X, Li H, Shang Y, Meng F, Li Z, Meng K, Wu Y, Xu X, Jiang Y, Chen N, Chen J 2023 Phys. Chem. Chem. Phys. 25 21908 Google Scholar
[44]	Pofelski A, Jia H, Deng S, Yu H, Park T J, Manna S, Chan M K Y, Sankaranarayanan S K R S, Ramanathan S, Zhu Y 2024 Nano Lett. 24 1974 Google Scholar
[45]	Chen Y L, Wang Z W, Chen S, Ren H, Wang L X, Zhang G B, Lu Y L, Jiang J, Zou C W, Luo Y 2018 Nat. Commun. 9 818 Google Scholar
[46]	Yoon H, Choi M, Lim T W, Kwon H, Ihm K, Kim J K, Choi S Y, Son J 2016 Nat. Mater. 15 1113 Google Scholar
[47]	Scherwitzl R, Zubko P, Lezama I G, Ono S, Morpurgo A F, Catalan G, Triscone J-M 2010 Adv. Mater. 22 5517 Google Scholar
[48]	Shi J, Zhou Y, Ramanathan S 2014 Nat. Commun. 5 4860 Google Scholar
[49]	Jeong J, Aetukuri N, Graf T, Schladt T D, Samant M G, Parkin S S 2013 Science 339 1402 Google Scholar
[50]	Li H B, Lou F, Wang Y J, et al. 2019 Adv. Sci. 6 1901432 Google Scholar
[51]	Park J, Yoon H, Sim H, Choi S Y, Son J 2020 ACS Nano 14 2533 Google Scholar
[52]	Ji H, Wang S, Zhou G, Zhou X, Dou J, Kang P, Chen J, Xu X 2024 Phys. Chem. Chem. Phys. 26 5907 Google Scholar
[53]	Zhou X C, Mao W, Cui Y C, Zhang H, Liu Q, Nie K Q, Xu X G, Jiang Y, Chen N F, Chen J K 2023 Adv. Funct. Mater. 33 2303416 Google Scholar
[54]	Wang M, Sui X L, Wang Y J, et al. 2019 Adv. Mater. 31 1900458 Google Scholar
[55]	Li Z, Lyu Y, Ran Z, et al. 2023 Adv. Funct. Mater. 33 2212298 Google Scholar
[56]	Wang Q, Gu Y, Chen C, Han L, Fayaz M U, Pan F, Song C 2024 ACS Appl. Mater. Interfaces 16 3726 Google Scholar
[57]	Zhou X, Shang Y, Gu Z, Jiang G, Ozawa T, Mao W, Fukutani K, Matsuzaki H, Jiang Y, Chen N, Chen J 2024 Appl. Phys. Lett. 124 082103 Google Scholar
[58]	Hong B, Yang Y, Hu K, Dong Y, Zhou J, Zhang Y, Zhao W, Luo Z, Gao C 2019 Appl. Phys. Lett. 115 251605 Google Scholar
[59]	Zhang Z, Sun Y, Zhang H-T 2022 J. Appl. Phys. 131 120901 Google Scholar
[60]	Zhi B, Gao G, Xu H, Chen F, Tan X, Chen P, Wang L, Wu W 2014 ACS Appl. Mater. Interfaces 6 4603 Google Scholar
[61]	Salev P, del Valle J, Kalcheim Y, Schuller I K 2019 PNAS 116 8798 Google Scholar
[62]	Heo S, Oh C, Eom M J, Kim J S, Ryu J, Son J, Jang H M 2016 Sci. Rep. 6 22228 Google Scholar
[63]	Sheng Z G, Gao J, Sun Y P 2009 Phys. Rev. B 79 174437 Google Scholar
[64]	Baldini M, Postorino P, Malavasi L, Marini C, Chapman K W, Mao H K 2016 Phys. Rev. B 93 245137 Google Scholar
[65]	Gavriliuk A G, Trojan I A, Struzhkin V V 2012 Phys. Rev. Lett. 109 086402 Google Scholar
[66]	Chen J, Li Z, Dong H, Xu J, Wang V, Feng Z, Chen Z, Chen B, Chen N, Mao H-K 2020 Adv. Funct. Mater. 30 2000987 Google Scholar
[67]	Xue W H, Liu G, Zhong Z C, Dai Y H, Shang J, Liu Y W, Yang H L, Yi X H, Tan H W, Pan L, Gao S, Ding J, Xu X H, Li R W 2017 Adv. Mater. 29 1702162 Google Scholar
[68]	孙肖宁, 曲兆明, 王庆国, 袁扬, 刘尚合 2019 物理学报 68 107201 Google Scholar Sun X N, Qu Z M, Wang Q G, Yuan Y, Liu S H 2019 Acta Phys. Sin. 68 107201 Google Scholar
[69]	Freeman E, Stone G, Shukla N, Paik H, Moyer J A, Cai Z, Wen H, Engel-Herbert R, Schlom D G, Gopalan V, Datta S 2013 Appl. Phys. Lett. 103 263109 Google Scholar
[70]	Chen J K, Mao W, Gao L, Yan F B, Yajima T, Chen N F, Chen Z Z, Dong H L, Ge B H, Zhang P, Cao X Z, Wilde M, Jiang Y, Terai T, Shi J 2020 Adv. Mater. 32 1905060 Google Scholar
[71]	Li H, Wang Y, Li H, Yan F, Ge B, Zhang J, Chen N, Chen J 2022 ACS Appl. Electron. Mater. 4 4873 Google Scholar
[72]	Hu F X, Gao J 2006 Appl. Phys. Lett. 88 132502 Google Scholar
[73]	Sharma Y, Balachandran J, Sohn C, Krogel J T, Ganesh P, Collins L, Ievlev A V, Li Q, Gao X, Balke N, Ovchinnikova O S, Kalinin S V, Heinonen O, Lee H N 2018 ACS Nano 12 7159 Google Scholar
[74]	Zhang Z, Mondal S, Mandal S, et al. 2021 PNAS 118 e2017239118 Google Scholar
[75]	Schrecongost D, Aziziha M, Zhang H T, et al. 2019 Adv. Funct. Mater. 29 1905585 Google Scholar
[76]	Lee Y J, Hong K, Na K, Yang J, Lee T H, Kim B, Bark C W, Kim J Y, Park S H, Lee S, Jang H W 2022 Adv. Mater. 34 2203097 Google Scholar
[77]	Matsuda Y H, Nakamura D, Ikeda A, Takeyama S, Suga Y, Nakahara H, Muraoka Y 2020 Nat. Commun. 11 3591 Google Scholar
[78]	Li G, Xie D, Zhong H, Zhang Z, Fu X, Zhou Q, Li Q, Ni H, Wang J, Guo E J, He M, Wang C, Yang G, Jin K, Ge C 2022 Nat. Commun. 13 1729 Google Scholar

施引文献

图 1 强关联氧化物金属-绝缘体转变(MIT)机理的示意图　(a) 二氧化钒(VO₂); (b) 稀土镍酸盐(ReNiO₃), 图(a)中标注的SPT为结构相变(structure phase transition)的缩写

Fig. 1. Schematic of the mechanism associated with the metal-to-insulator transition: (a) VO₂; (b) ReNiO₃, SPT is structure phase transition.

下载: 全尺寸图片幻灯片

图 2 多场调控强关联氧化物电子相变特性的示意图

Fig. 2. Schematic of regulating the electronic phase transitions for correlated oxides via multiple fields.

下载: 全尺寸图片幻灯片

图 3 化学掺杂调控强关联氧化物的电子相变特性　(a) 放电等离子体辅助的反应掺杂策略示意图^[42]; (b) 掺杂VO₂的相变温度随掺杂量的变化关系图^[42]; (c) 掺杂VO₂的相变尖锐度随相变温度的变化关系图^[43]

Fig. 3. Regulating the electronic phase transition for correlated oxides via chemical doping: (a) Schematic of spark plasma assisted reactive doping strategy^[42]; (b) the transition temperature for doped VO₂ plotted as a function of doping concentration^[42]; (c) the transition sharpness for doped VO₂ plotted as a function of doping concentration^[43].

下载: 全尺寸图片幻灯片

图 4 质子化调控强关联氧化物的电子相变特性　(a) 质子化触发VO₂发生多重轨道重构的示意图^[5]; (b) 氢化VO₂的氢含量深度分布图及其阻温特性^[5]; (c) VO₂中氢含量随W⁶⁺掺杂含量的变化关系图^[57]

Fig. 4. Regulating the electronic phase transition for correlated oxides via protonation: (a) Schematic of hydrogen-induced multiple orbital reconfigurations within VO₂^[5]; (b) the depth profile of the hydrogen concentration and the temperature dependence of the resistivity for hydrogenated VO₂^[5]; (c) the hydrogen content for W⁶⁺-substituted VO₂ plotted as a function of W⁶⁺ doping concentration^[57].

下载: 全尺寸图片幻灯片

图 5 界面应力调控强关联氧化物的电子相变特性　(a) 质子化触发NiO发生多重电子相变示意图^[53]; (b) NiO/PMN-PT异质结的阻态翻转^[53]; (c) 界面应力调控NiO的载流子跃迁激活能^[53]

Fig. 5. Regulating the electronic phase transition for correlated oxides via interfacial strain: (a) Schematic of hydrogen-triggered multiple electronic phase transitions^[53]; (b) the resistive switching of NiO/PMN-PT heterostructure^[53]; (c) manipulating the carrier hooping energy of NiO by using interfacial strain^[53].

下载: 全尺寸图片幻灯片

图 6 特征电场调控氢化强关联氧化物的电子相变特性　(a) 特征电场触发VO₂ 可逆的氢致电子相变^[5]; (b) 特征电场诱导氢化SmNiO₃中类二极管的奇异输运行为^[70]; (c) SmNiO₃基海洋电场传感器原理图^[71]; (d) SmNiO₃海洋电场传感的晶体学各向异性^[71]

Fig. 6. Regulating the electronic phase transition for hydrogenated correlated oxides via imparting a critical electric field: (a) Voltage-actuated reversible hydrogen-associated electronic phase transition of VO₂ ^[5]; (b) electrically tunable diode-like transport behavior of hydrogenated SmNiO₃ ^[70]; (c) schematic of SmNiO₃-based ocean electric field sensor^[71]; (d) the crystallographic anisotropy in the ocean electric field sensing of SmNiO₃^[71].

下载: 全尺寸图片幻灯片

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34 Google Scholar
[2]	Li L L, Wang M, Zhou Y D, Zhang Y, Zhang F, Wu Y S, Wang Y J, Lyu Y J, Lu N P, Wang G P, Peng H N, Shen S C, Du Y G, Zhu Z H, Nan C W, Yu P 2022 Nat. Mater. 21 1246 Google Scholar
[3]	Lu N, Zhang Z, Wang Y, Li H B, Qiao S, Zhao B, He Q, Lu S, Li C, Wu Y, Zhu M, Lyu X, Chen X, Li Z, Wang M, Zhang J, Tsang S C, Guo J, Yang S, Zhang J, Deng K, Zhang D, Ma J, Ren J, Wu Y, Zhu J, Zhou S, Tokura Y, Nan C W, Wu J, Yu P 2022 Nat. Energy 7 1208 Google Scholar
[4]	Zhou X, Li H, Jiao Y, Zhou G, Ji H, Jiang Y, Xu X 2024 Adv. Funct. Mater. 2316536 Google Scholar
[5]	Zhou X, Li H, Meng F, Mao W, Wang J, Jiang Y, Fukutani K, Wilde M, Fugetsu B, Sakata I, Chen N, Chen J 2022 J. Phys. Chem. Lett. 13 8078 Google Scholar
[6]	Wang S, Jiang T, Meng Y, Yang R, Tan G, Long Y 2021 Science 374 1501 Google Scholar
[7]	Tang K, Dong K, Li J, Gordon M P, Reichertz F G, Kim H, Rho Y, Wang Q, Lin C Y, Grigoropoulos C P, Javey A, Urban J J, Yao J, Levinson R, Wu J 2021 Science 374 1504 Google Scholar
[8]	Zhang H T, Park T J, Islam A, et al. 2022 Science 375 533 Google Scholar
[9]	Lee D, Chung B, Shi Y, et al. 2018 Science 362 1037 Google Scholar
[10]	劳斌, 郑轩, 李晟, 汪志明 2023 物理学报 72 097702 Google Scholar Lao B, Zheng X, Li S, Wang Z M 2023 Acta Phys. Sin. 72 097702 Google Scholar
[11]	Zhou X, Wu Y, Yan F, Zhang T, Ke X, Meng K, Xu X, Li Z, Miao J, Chen J, Jiang Y 2021 Ceram. Int. 47 25574 Google Scholar
[12]	Gao L, Wang H, Meng F, Peng H, Lyu X, Zhu M, Wang Y, Lu C, Liu J, Lin T, Ji A, Zhang Q, Gu L, Yu P, Meng S, Cao Z, Lu N 2023 Adv. Mater. 2300617 Google Scholar
[13]	Chen J K, Mao W, Ge B H, Wang J, Ke X Y, Wang V, Wang Y P, Dobeli M, Geng W T, Matsuzaki H, Shi J, Jiang Y 2019 Nat. Commun. 10 694 Google Scholar
[14]	Zhang Z, Schwanz D, Narayanan B, et al. 2018 Nature 553 68 Google Scholar
[15]	Zhou Y, Guan X F, Zhou H, Ramadoss K, Adam S, Liu H J, Lee S, Shi J, Tsuchiya M, Fong D D, Ramanathan S 2016 Nature 534 231 Google Scholar
[16]	Deng S, Yu H, Park T J, Islam A N M N, Manna S, Pofelski A, Wang Q, Zhu Y, Sankaranarayanan S K R S, Sengupta A, Ramanathan S 2023 Sci. Adv. 9 eade4838 Google Scholar
[17]	Li D F, Lee K, Wang B Y, Osada M, Crossley S, Lee H R, Cui Y, Hikita Y, Hwang H Y 2019 Nature 572 624 Google Scholar
[18]	Ding X, Tam C C, Sui X, Zhao Y, Xu M, Choi J, Leng H, Zhang J, Wu M, Xiao H, Zu X, Garcia-Fernandez M, Agrestini S, Wu X, Wang Q, Gao P, Li S, Huang B, Zhou K J, Qiao L 2023 Nature 615 50 Google Scholar
[19]	Sun H, Huo M, Hu X, Li J, Liu Z, Han Y, Tang L, Mao Z, Yang P, Wang B, Cheng J, Yao D X, Zhang G M, Wang M 2023 Nature 621 493 Google Scholar
[20]	Lu N P, Zhang P F, Zhang Q H, Qiao R M, He Q, Li H B, Wang Y J, Guo J W, Zhang D, Duan Z, Li Z L, Wang M, Yang S Z, Yan M Z, Arenholz E, Zhou S Y, Yang W L, Gu L, Nan C W, Wu J, Tokura Y, Yu P 2017 Nature 546 124 Google Scholar
[21]	Aetukuri N B, Gray A X, Drouard M, Cossale M, Gao L, Reid A H, Kukreja R, Ohldag H, Jenkins C A, Arenholz E, Roche K P, Dürr H A, Samant M G, Parkin S S P 2013 Nat. Phys. 9 661 Google Scholar
[22]	Zhang Z, Zhang L, Zhou Y, Cui Y, Chen Z, Liu Y, Li J, Long Y, Gao Y 2023 Chem. Rev. 123 7025 Google Scholar
[23]	Yajima T, Nishimura T, Toriumi A 2015 Nat. Commun. 6 10104 Google Scholar
[24]	Victor J L, Gaudon M, Salvatori G, Toulemonde O, Penin N, Rougier A 2021 J. Phys. Chem. Lett. 12 7792 Google Scholar
[25]	Suleiman A O, Mansouri S, Margot J, Chaker M 2022 Appl. Surf. Sci. 571 151267 Google Scholar
[26]	Sakai E, Yoshimatsu K, Shibuya K, Kumigashira H, Ikenaga E, Kawasaki M, Tokura Y, Oshima M 2011 Phys. Rev. B 84 195132 Google Scholar
[27]	Liu K, Lee S, Yang S, Delaire O, Wu J 2018 Mater. Today 21 875 Google Scholar
[28]	Li H F, Meng F Q, Bian Y, Zhou X C, Wang J U, Xu X G, Jiang Y, Chen N F, Chen J K 2023 J. Mater. Sci. Technol. 148 235 Google Scholar
[29]	Li H F, Wang Y Z, Zhang H, Fang X H, Zhou X C, Nie K Q, Xu X G, Jiang Y, Chen N F, Chen J K 2022 Appl. Phys. Lett. 121 253901 Google Scholar
[30]	Chen J, Li H, Wang J, Ke X, Ge B, Chen J, Dong H, Jiang Y, Chen N 2020 J. Mater. Chem. A 8 13630 Google Scholar
[31]	Catalano S, Gibert M, Fowlie J, Iñiguez J, Triscone J M, Kreisel J 2018 Rep. Prog. Phys. 81 046501 Google Scholar
[32]	Catalan G 2008 Phase Transitions 81 729 Google Scholar
[33]	Chen J 2023 Chin. Sci. Bull. 68 100 Google Scholar
[34]	Markiewicz E, Bujakiewicz-Koronska R, Budziak A, Kalvane A, Nalecz D M 2014 Phase Transitions 87 1060 Google Scholar
[35]	Kozlenko D P, Belik A A, Kichanov S E, Mirebeau I, Sheptyakov D V, Strässle T, Makarova O L, Belushkin A V, Savenko B N, Takayama-Muromachi E 2010 Phys. Rev. B 82 014401 Google Scholar
[36]	Schiffer P, Ramirez A P, Bao W, Cheong S W 1995 Phys. Rev. Lett. 75 3336 Google Scholar
[37]	Song Q, Doyle S, Pan G A, et al. 2023 Nat. Phys. 19 522 Google Scholar
[38]	Yajima T, Nishimura T, Toriumi A 2017 Small 13 1603113 Google Scholar
[39]	Asayesh-Ardakani H, Nie A M, Marley P M, et al. 2015 Nano Lett. 15 7179 Google Scholar
[40]	Zhou J Y, Xie M Z, Cui A Y, Zhou B, Jiang K, Shang L Y, Hu Z G, Chu J H 2018 ACS Appl. Mater. Interfaces 10 30548 Google Scholar
[41]	Rao C N R, Natarajan M, Subba Rao G V, Loehman R E 1971 J. Phys. Chem. Solids 32 1147 Google Scholar
[42]	Zhou X, Cui Y, Shang Y, Li H, Wang J, Meng Y, Xu X, Jiang Y, Chen N, Chen J 2023 J. Phys. Chem. C 127 2639 Google Scholar
[43]	Zhou X, Li H, Shang Y, Meng F, Li Z, Meng K, Wu Y, Xu X, Jiang Y, Chen N, Chen J 2023 Phys. Chem. Chem. Phys. 25 21908 Google Scholar
[44]	Pofelski A, Jia H, Deng S, Yu H, Park T J, Manna S, Chan M K Y, Sankaranarayanan S K R S, Ramanathan S, Zhu Y 2024 Nano Lett. 24 1974 Google Scholar
[45]	Chen Y L, Wang Z W, Chen S, Ren H, Wang L X, Zhang G B, Lu Y L, Jiang J, Zou C W, Luo Y 2018 Nat. Commun. 9 818 Google Scholar
[46]	Yoon H, Choi M, Lim T W, Kwon H, Ihm K, Kim J K, Choi S Y, Son J 2016 Nat. Mater. 15 1113 Google Scholar
[47]	Scherwitzl R, Zubko P, Lezama I G, Ono S, Morpurgo A F, Catalan G, Triscone J-M 2010 Adv. Mater. 22 5517 Google Scholar
[48]	Shi J, Zhou Y, Ramanathan S 2014 Nat. Commun. 5 4860 Google Scholar
[49]	Jeong J, Aetukuri N, Graf T, Schladt T D, Samant M G, Parkin S S 2013 Science 339 1402 Google Scholar
[50]	Li H B, Lou F, Wang Y J, et al. 2019 Adv. Sci. 6 1901432 Google Scholar
[51]	Park J, Yoon H, Sim H, Choi S Y, Son J 2020 ACS Nano 14 2533 Google Scholar
[52]	Ji H, Wang S, Zhou G, Zhou X, Dou J, Kang P, Chen J, Xu X 2024 Phys. Chem. Chem. Phys. 26 5907 Google Scholar
[53]	Zhou X C, Mao W, Cui Y C, Zhang H, Liu Q, Nie K Q, Xu X G, Jiang Y, Chen N F, Chen J K 2023 Adv. Funct. Mater. 33 2303416 Google Scholar
[54]	Wang M, Sui X L, Wang Y J, et al. 2019 Adv. Mater. 31 1900458 Google Scholar
[55]	Li Z, Lyu Y, Ran Z, et al. 2023 Adv. Funct. Mater. 33 2212298 Google Scholar
[56]	Wang Q, Gu Y, Chen C, Han L, Fayaz M U, Pan F, Song C 2024 ACS Appl. Mater. Interfaces 16 3726 Google Scholar
[57]	Zhou X, Shang Y, Gu Z, Jiang G, Ozawa T, Mao W, Fukutani K, Matsuzaki H, Jiang Y, Chen N, Chen J 2024 Appl. Phys. Lett. 124 082103 Google Scholar
[58]	Hong B, Yang Y, Hu K, Dong Y, Zhou J, Zhang Y, Zhao W, Luo Z, Gao C 2019 Appl. Phys. Lett. 115 251605 Google Scholar
[59]	Zhang Z, Sun Y, Zhang H-T 2022 J. Appl. Phys. 131 120901 Google Scholar
[60]	Zhi B, Gao G, Xu H, Chen F, Tan X, Chen P, Wang L, Wu W 2014 ACS Appl. Mater. Interfaces 6 4603 Google Scholar
[61]	Salev P, del Valle J, Kalcheim Y, Schuller I K 2019 PNAS 116 8798 Google Scholar
[62]	Heo S, Oh C, Eom M J, Kim J S, Ryu J, Son J, Jang H M 2016 Sci. Rep. 6 22228 Google Scholar
[63]	Sheng Z G, Gao J, Sun Y P 2009 Phys. Rev. B 79 174437 Google Scholar
[64]	Baldini M, Postorino P, Malavasi L, Marini C, Chapman K W, Mao H K 2016 Phys. Rev. B 93 245137 Google Scholar
[65]	Gavriliuk A G, Trojan I A, Struzhkin V V 2012 Phys. Rev. Lett. 109 086402 Google Scholar
[66]	Chen J, Li Z, Dong H, Xu J, Wang V, Feng Z, Chen Z, Chen B, Chen N, Mao H-K 2020 Adv. Funct. Mater. 30 2000987 Google Scholar
[67]	Xue W H, Liu G, Zhong Z C, Dai Y H, Shang J, Liu Y W, Yang H L, Yi X H, Tan H W, Pan L, Gao S, Ding J, Xu X H, Li R W 2017 Adv. Mater. 29 1702162 Google Scholar
[68]	孙肖宁, 曲兆明, 王庆国, 袁扬, 刘尚合 2019 物理学报 68 107201 Google Scholar Sun X N, Qu Z M, Wang Q G, Yuan Y, Liu S H 2019 Acta Phys. Sin. 68 107201 Google Scholar
[69]	Freeman E, Stone G, Shukla N, Paik H, Moyer J A, Cai Z, Wen H, Engel-Herbert R, Schlom D G, Gopalan V, Datta S 2013 Appl. Phys. Lett. 103 263109 Google Scholar
[70]	Chen J K, Mao W, Gao L, Yan F B, Yajima T, Chen N F, Chen Z Z, Dong H L, Ge B H, Zhang P, Cao X Z, Wilde M, Jiang Y, Terai T, Shi J 2020 Adv. Mater. 32 1905060 Google Scholar
[71]	Li H, Wang Y, Li H, Yan F, Ge B, Zhang J, Chen N, Chen J 2022 ACS Appl. Electron. Mater. 4 4873 Google Scholar
[72]	Hu F X, Gao J 2006 Appl. Phys. Lett. 88 132502 Google Scholar
[73]	Sharma Y, Balachandran J, Sohn C, Krogel J T, Ganesh P, Collins L, Ievlev A V, Li Q, Gao X, Balke N, Ovchinnikova O S, Kalinin S V, Heinonen O, Lee H N 2018 ACS Nano 12 7159 Google Scholar
[74]	Zhang Z, Mondal S, Mandal S, et al. 2021 PNAS 118 e2017239118 Google Scholar
[75]	Schrecongost D, Aziziha M, Zhang H T, et al. 2019 Adv. Funct. Mater. 29 1905585 Google Scholar
[76]	Lee Y J, Hong K, Na K, Yang J, Lee T H, Kim B, Bark C W, Kim J Y, Park S H, Lee S, Jang H W 2022 Adv. Mater. 34 2203097 Google Scholar
[77]	Matsuda Y H, Nakamura D, Ikeda A, Takeyama S, Suga Y, Nakahara H, Muraoka Y 2020 Nat. Commun. 11 3591 Google Scholar
[78]	Li G, Xie D, Zhong H, Zhang Z, Fu X, Zhou Q, Li Q, Ni H, Wang J, Guo E J, He M, Wang C, Yang G, Jin K, Ge C 2022 Nat. Commun. 13 1729 Google Scholar

[1]	陈盛如, 林珊, 洪海涛, 崔婷, 金桥, 王灿, 金奎娟, 郭尔佳. 钴氧化物中晶格与自旋的关联耦合效应研究. 物理学报, 2023, 72(9): 097502. doi: 10.7498/aps.72.20230206
[2]	孙雨婷, 李明明, 王玲瑞, 樊贞, 郭尔佳, 郭海中. 外场对拓扑相变氧化物薄膜物性的调控研究进展. 物理学报, 2023, 72(9): 096801. doi: 10.7498/aps.72.20222266
[3]	房晓南, 危芹, 隋娜娜, 孔志勇, 刘静, 杜颜伶. 间隔层调控SrVO₃/SrTiO₃超晶格铁磁半金属-铁磁绝缘体转变. 物理学报, 2022, 71(23): 237301. doi: 10.7498/aps.71.20221765
[4]	房晓南, 杜颜伶, 吴晨雨, 刘静. (SrVO₃)₅/(SrTiO₃)₁(111)异质结金属-绝缘体转变和磁性调控的第一性原理研究. 物理学报, 2022, 71(18): 187301. doi: 10.7498/aps.71.20220627
[5]	郭文锑, 黄璐, 许桂贵, 钟克华, 张健敏, 黄志高. 本征磁性拓扑绝缘体MnBi₂Te₄电子结构的压力应变调控. 物理学报, 2021, 70(4): 047101. doi: 10.7498/aps.70.20201237
[6]	李云, 鲁文建. 掺杂维度和浓度调控的δ掺杂的La:SrTiO₃超晶格结构金属-绝缘体转变. 物理学报, 2021, 70(22): 227102. doi: 10.7498/aps.70.20210830
[7]	刘畅, 刘祥瑞. 强三维拓扑绝缘体与磁性拓扑绝缘体的角分辨光电子能谱学研究进展. 物理学报, 2019, 68(22): 227901. doi: 10.7498/aps.68.20191450
[8]	彭超, 恩云飞, 李斌, 雷志锋, 张战刚, 何玉娟, 黄云. 绝缘体上硅金属氧化物半导体场效应晶体管中辐射导致的寄生效应研究. 物理学报, 2018, 67(21): 216102. doi: 10.7498/aps.67.20181372
[9]	王文彬, 朱银燕, 殷立峰, 沈健. 复杂氧化物中电子相分离的量子调控. 物理学报, 2018, 67(22): 227502. doi: 10.7498/aps.67.20182007
[10]	焦媛媛, 孙建平, Prashant Shahi, 刘哲宏, 王铂森, 龙有文, 程金光. Pb掺杂对Cd2Ru2O7反常金属态的调控. 物理学报, 2018, 67(12): 127402. doi: 10.7498/aps.67.20180343
[11]	王泽霖, 张振华, 赵喆, 邵瑞文, 隋曼龄. 电触发二氧化钒纳米线发生金属-绝缘体转变的机理. 物理学报, 2018, 67(17): 177201. doi: 10.7498/aps.67.20180835
[12]	罗明海, 徐马记, 黄其伟, 李派, 何云斌. VO2金属-绝缘体相变机理的研究进展. 物理学报, 2016, 65(4): 047201. doi: 10.7498/aps.65.047201
[13]	杜永平, 刘慧美, 万贤纲. 5d过渡金属氧化物中的奇异量子物性研究. 物理学报, 2015, 64(18): 187201. doi: 10.7498/aps.64.187201
[14]	赵星, 梅博, 毕津顺, 郑中山, 高林春, 曾传滨, 罗家俊, 于芳, 韩郑生. 0.18 m部分耗尽绝缘体上硅互补金属氧化物半导体电路单粒子瞬态特性研究. 物理学报, 2015, 64(13): 136102. doi: 10.7498/aps.64.136102
[15]	王昌雷, 田震, 邢岐荣, 谷建强, 刘丰, 胡明列, 柴路, 王清月. 硅基VO2纳米薄膜光致绝缘体—金属相变的THz时域频谱研究. 物理学报, 2010, 59(11): 7857-7862. doi: 10.7498/aps.59.7857
[16]	彭振生, 唐永刚, 严国清, 郭焕银, 毛强. La0.67Sr0.08Na0.25MnO3的奇特输运性质及CMR效应. 物理学报, 2007, 56(3): 1707-1712. doi: 10.7498/aps.56.1707
[17]	邱梅清, 方明虎. Eu2－xPbxRu2O7中的金属-绝缘体相变和自旋玻璃态行为. 物理学报, 2006, 55(9): 4912-4917. doi: 10.7498/aps.55.4912
[18]	俞建华, 孙承休, 王茂祥, 张佑文, 魏同立. 金属-绝缘体-金属隧道发光结的电子隧穿和负阻现象. 物理学报, 1998, 47(2): 300-306. doi: 10.7498/aps.47.300
[19]	胡文英, 曾雉, 郑庆祺, 黄美纯. 电子间关联作用对过渡金属氧化物磁矩的影响. 物理学报, 1995, 44(2): 273-279. doi: 10.7498/aps.44.273
[20]	陈锋, 应和平, 徐铁锋, 李文铸. 二维半充满Hubbard模型有限温度下绝缘体──金属相变的研究. 物理学报, 1994, 43(10): 1672-1676. doi: 10.7498/aps.43.1672

计量

文章访问数: 861
PDF下载量: 72
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板

强关联电子相变氧化物材料及多场调控