低重复频率被动锁模半导体碟片激光器

贺亮; 彭雪芳; 沈小雨; 朱仁江; 王涛; 蒋丽丹; 佟存柱; 宋晏蓉; 张鹏

doi:10.7498/aps.73.20240441

摘要

锁模半导体碟片激光器(semiconductor disk laser, SDL)兼具输出功率高与光束质量好的优点, 但半导体增益介质ns量级很短的载流子寿命限制了锁模脉冲重复频率的降低, 因而在一定程度上限制了锁模脉冲峰值功率的提高. 本工作中增益芯片内较浅的量子阱所对应的载流子寿命相对较长, 结合特殊设计的较小饱和通量的半导体可饱和吸收镜(semiconductor saturable absorption mirror, SESAM), 获得了低重复频率、高峰值功率的被动锁模SDL. 当温度为12 ℃时, 利用六镜谐振腔产生的被动锁模激光脉冲重复频率低至78 MHz, 为迄今为止在SESAM锁模SDL中所获得的最低重复频率. 锁模SDL的平均输出功率为2.1 W, 脉冲宽度为2.08 ps, 对应的脉冲的峰值功率12.8 kW, 为已有报道最高值的近2倍.

关键词:

Abstract

Semiconductor disk lasers (SDLs) have advantages of high output power and good beam quality. Their flexible external cavity provides convenience for inserting additional optical element to start mode locking and produce ultra-short pulse train with duration from picosecond to femtosecond. However, the very short lifetime in a range from about a few nanoseconds to tens of nanoseconds of the carrier in semiconductor gain medium limits the decrease of pulse repetition rate, thus restricting the increase of peak power of the mode-locked laser pulse to some extent. In this work, by using the relatively shallow In_0.2GaAs quantum wells, which have a relatively long carrier lifetime in the active region of gain chip, as well as the particularly designed semiconductor saturable absorption mirror (SESAM) that has a relatively small saturation flux, a passively mode-locked SDL with low repetition rate and high peak power is demonstrated. The used six-mirror cavity has a spot radius of about 200 μm on the chip and a 40 μm spot on the SESAM, and the total cavity length is about 1.92 m. The SESAM passively mode-locked SDL produces a stable pulse train with a lowest repetition rate of 78 MHz. When the temperature is 12 ℃ and the transmittance of the output coupler is T = 3%, an average output power value of 2.1 W and a pulse duration of 2.08 ps are achieved. The corresponding pulse peak power reaches 12.8 kW, which is about twice the reported highest peak power in an SESAM mode-locked SDL. When T = 2% and T = 5%, the obtained average output power values are 1.34 W and 1.62 W respectively, and the corresponding pulse peak power values are 8.17 kW and 9.88 kW. Based on the values reported in the literature and the results of pulse repetition rate in our experiments, the estimated lifetime of the carriers of the In_0.2GaAs quantum wells in the active region of the gain used chip is 16.4 ns. This high peak power mode-locked semiconductor disk laser has important potential applications in biomedical photonics, chemistry, and nonlinear microscopy.

Keywords:

semiconductor disk laser /
semiconductor saturable absorption mirror /
mode-locked /
peak power

作者及机构信息

1.
重庆师范大学物理与电子工程学院, 重庆　401331

2.
中国科学院长春光学精密机械与物理研究所, 长春　130033

3.
北京工业大学理学部, 北京　100124

4.
重庆师范大学重庆国家应用数学中心, 重庆　401331

通信作者: 张鹏, zhangpeng2010@cqnu.edu.cn

基金项目: 在渝本科高校与中国科学院所属院所合作项目(批准号: HZ2021007)、重庆市教委科技计划(批准号: KJQN202200557, KJQN202300525)、国家自然科学基金(批准号: 61975003, 61790584, 62025506)和重庆师范大学基金(批准号: 23XLB003)资助的课题.

Authors and contacts

1.
College of Physics and Electronic Engineering, Chongqing Normal University, Chongqing 401331, China

2.
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

3.
Faculty of Sciences, Beijing University of Technology, Beijing 100124, China

4.
National Center for Applied Mathematics in Chongqing, Chongqing Normal University, Chongqing 401331, China

Corresponding author: Zhang Peng, zhangpeng2010@cqnu.edu.cn

Funds: Project supported by the Cooperation Project between Chongqing Local Universities and Institutions of Chinese Academy of Sciences, Chongqing Municipal Education Commission, China (Grant No. HZ2021007), the Science and Technology Research Program of Chongqing Municipal Education Commission, China (Grant Nos. KJQN202200557, KJQN202300525), the National Natural Science Foundation of China (Grant Nos. 61975003, 61790584, 62025506), and the Chongqing Normal University Fund Project (Grant No. 23XLB003).

文章全文

参考文献

[1]	李玉娇, 宗楠, 彭钦军 2018 激光与光电子学进展 55 49 Google Scholar Li Y J, Zong N, Peng Q J 2018 Laser Optoelectron. Prog. 55 49 Google Scholar
[2]	Rahimi-Iman A 2016 J. Optics-UK 18 093003 Google Scholar
[3]	Guina M, Rantamäki A, Härkönen A 2017 J. Phys. D Appl. Phys. 50 383001 Google Scholar
[4]	Keller U, Weingarten K J, Kartner F X, Kopf D, Braun B, Jung I D, Fluck R, Honninger C, Matuschek N, Der Au J A 1996 IEEE J. Sel. Top. Quant. 2 435 Google Scholar
[5]	Hoogland S, Dhanjal S, Tropper A C, Roberts S J, Häring R, Paschotta R, Keller U 2000 IEEE Photonic. Tech. L. 12 1135 Google Scholar
[6]	Garnache A, Hoogland S, Tropper A C, Sagnes I, Saint-Girons G, Roberts J S 2002 Appl. Phys. Lett. 80 3892 Google Scholar
[7]	Klopp P, Griebner U, Zorn M, Weyers M 2011 Appl. Phys. Lett. 98 071103 Google Scholar
[8]	Quarterman A H, Wilcox K G, Apostolopoulos V, Mihoubi Z, Elsmere S P, Farrer I, Ritchie D A, Tropper A C 2009 Nat. Photonics 3 729 Google Scholar
[9]	Scheller M, Wang T L, Kunert B, Stolz W, Koch S W, Moloney J V 2012 Electron. Lett. 48 588 Google Scholar
[10]	Wilcox K G, Tropper A C, Beere H E, Ritchie D A, Kunert B, Heinen B, Stolz W 2013 Opt. Express 21 1599 Google Scholar
[11]	Baker C W, Scheller M, Laurain A, Ruiz-Perez A, Stolz W, Addamane S, Balakrishnan G, Koch S W, Jones R J, Moloney J V 2017 IEEE Photonic. Tech. L. 29 326 Google Scholar
[12]	Kornaszewski L, Maker G, Malcolm G P A, Butkus M, Rafailov E U, Hamilton C J 2012 Laser Photon. Rev. 6 L20 Google Scholar
[13]	Lorenser D, Maas D J H C, Unold H J, Bellancourt A R, Rudin B, Gini E, Ebling D, Keller U 2006 IEEE J. Quantum Elect. 42 838 Google Scholar
[14]	Saarinen E J, Rantamaki A, Chamorovskiy A, Okhotnikov O G 2012 Electron. Lett. 48 1355 Google Scholar
[15]	Butkus M, Viktorov E A, Erneux T, Hamilton C J, Maker G, Malcolm G P A, Rafailov E U 2013 Opt. Express 21 25526 Google Scholar
[16]	Wilcox K G, Quarterman A H, Beere H E, Ritchie D A, Tropper A C 2011 Opt. Express 19 23453 Google Scholar
[17]	Chen Y C, Wang P, Coleman J J, Bour D P, Lee K K, Waters R G 1991 IEEE J. Quantum Elect. 27 1451 Google Scholar
[18]	Ehrlich J E, Neilson D T, Walker A C, Kennedy G T, Grant R S, Sibbett W, Hopkinson M 1993 Semicond. Sci. Technol. 8 307 Google Scholar
[19]	Alfieri C G E, Waldburger D, Link S M, Gini E, Golling M, Eisenstein G, Keller U 2017 Opt. Express 25 6402 Google Scholar
[20]	Keller U 1994 Appl. Phys. B 58 347 Google Scholar
[21]	Antal P G, Szipőcs R 2012 Appl. Phys. B 107 17 Google Scholar
[22]	Seres E, Seres J, Spielmann C 2012 Opt. Express 20 6185 Google Scholar
[23]	Carlin C Z, Bradshaw G K, Samberg J P, Colter P C, Bedair S M 2013 IEEE T. Electron Dev. 60 2532 Google Scholar
[24]	Ongstad A P, Gallant D J, Dente G C 1995 Appl. Phys. Lett. 66 2730 Google Scholar
[25]	Ongstad A P, Tilton M L, Bochove E J, Dente G C 1996 J. Appl. Phys. 80 2866 Google Scholar

施引文献

图 1 增益芯片外延结构简图

Fig. 1. Diagram of the epitaxy structure of gain chip.

下载: 全尺寸图片幻灯片

图 2 低重复频率SESAM锁模SDL光路图

Fig. 2. Schematic of the low repetition frequency SESAM mode-locked SDL.

下载: 全尺寸图片幻灯片

图 3 SESAM锁模SDL实物图, 图中标出了谐振腔中各元件及光路

Fig. 3. Photograph of the SESAM mode-locked SDL. The resonant cavity and optical path are also plotted.

下载: 全尺寸图片幻灯片

图 4 谐振腔中激光腔模半径大小随位置的变化

Fig. 4. Evolution of the radius of cavity mode in the resonator.

下载: 全尺寸图片幻灯片

图 5 连续光功率随吸收泵浦功率的变化, 内插图为激光光谱

Fig. 5. Output power of the continuous-wave laser vs. absorbed pump power, the inset is the laser spectrum.

下载: 全尺寸图片幻灯片

图 6 78 MHz锁模SDL时域波形图

Fig. 6. Pulse train of the 78 MHz mode-locked SDL.

下载: 全尺寸图片幻灯片

图 7 78 MHz锁模SDL射频频谱图

Fig. 7. Radio frequency spectrum of the 78 MHz mode-locked SDL.

下载: 全尺寸图片幻灯片

图 8 (a) 78 MHz锁模SDL光谱图; (b) 脉冲宽度的自相关测量结果

Fig. 8. (a) Spectrum of the 78 MHz mode-locked SDL; (b) autocorrelation trace of the mode-locked pulses.

下载: 全尺寸图片幻灯片

图 9 不同输出镜透过率下锁模SDL的输出功率

Fig. 9. Output power of the mode-locked SDL under different OC with various transmittance.

下载: 全尺寸图片幻灯片

表 1 已报道锁模SDL的重要成果一览表

Table 1. List of important results of mode-locked SDL have been reported.

年份	平均功率/W	峰值功率/kW	脉宽 /fs	重复频率 /GHz	波长 /nm	参考文献
2000	0.0153	—	5000	2.5	974	[5]
2002	0.1	0.152	477	1.21	1040	[6]
2006	0.1	—	3300	50	960	[13]
2009	0.035	—	60	—	1037	[8]
2011	0.003	—	107	5.136	1030	[7]
2012	5.1	—	682	1.71	1030	[9]
2012	1.5	6.8	930	0.21	985	[12]
2012	0.9	—	830	193	1050	[14]
2013	0.36	—	—	0.0857	989	[15]
2013	3.3	4.35	400	1.67	1013	[10]
2017	1.14	6.3	410	0.39	1030	[11]

下载: 导出CSV

[1]	李玉娇, 宗楠, 彭钦军 2018 激光与光电子学进展 55 49 Google Scholar Li Y J, Zong N, Peng Q J 2018 Laser Optoelectron. Prog. 55 49 Google Scholar
[2]	Rahimi-Iman A 2016 J. Optics-UK 18 093003 Google Scholar
[3]	Guina M, Rantamäki A, Härkönen A 2017 J. Phys. D Appl. Phys. 50 383001 Google Scholar
[4]	Keller U, Weingarten K J, Kartner F X, Kopf D, Braun B, Jung I D, Fluck R, Honninger C, Matuschek N, Der Au J A 1996 IEEE J. Sel. Top. Quant. 2 435 Google Scholar
[5]	Hoogland S, Dhanjal S, Tropper A C, Roberts S J, Häring R, Paschotta R, Keller U 2000 IEEE Photonic. Tech. L. 12 1135 Google Scholar
[6]	Garnache A, Hoogland S, Tropper A C, Sagnes I, Saint-Girons G, Roberts J S 2002 Appl. Phys. Lett. 80 3892 Google Scholar
[7]	Klopp P, Griebner U, Zorn M, Weyers M 2011 Appl. Phys. Lett. 98 071103 Google Scholar
[8]	Quarterman A H, Wilcox K G, Apostolopoulos V, Mihoubi Z, Elsmere S P, Farrer I, Ritchie D A, Tropper A C 2009 Nat. Photonics 3 729 Google Scholar
[9]	Scheller M, Wang T L, Kunert B, Stolz W, Koch S W, Moloney J V 2012 Electron. Lett. 48 588 Google Scholar
[10]	Wilcox K G, Tropper A C, Beere H E, Ritchie D A, Kunert B, Heinen B, Stolz W 2013 Opt. Express 21 1599 Google Scholar
[11]	Baker C W, Scheller M, Laurain A, Ruiz-Perez A, Stolz W, Addamane S, Balakrishnan G, Koch S W, Jones R J, Moloney J V 2017 IEEE Photonic. Tech. L. 29 326 Google Scholar
[12]	Kornaszewski L, Maker G, Malcolm G P A, Butkus M, Rafailov E U, Hamilton C J 2012 Laser Photon. Rev. 6 L20 Google Scholar
[13]	Lorenser D, Maas D J H C, Unold H J, Bellancourt A R, Rudin B, Gini E, Ebling D, Keller U 2006 IEEE J. Quantum Elect. 42 838 Google Scholar
[14]	Saarinen E J, Rantamaki A, Chamorovskiy A, Okhotnikov O G 2012 Electron. Lett. 48 1355 Google Scholar
[15]	Butkus M, Viktorov E A, Erneux T, Hamilton C J, Maker G, Malcolm G P A, Rafailov E U 2013 Opt. Express 21 25526 Google Scholar
[16]	Wilcox K G, Quarterman A H, Beere H E, Ritchie D A, Tropper A C 2011 Opt. Express 19 23453 Google Scholar
[17]	Chen Y C, Wang P, Coleman J J, Bour D P, Lee K K, Waters R G 1991 IEEE J. Quantum Elect. 27 1451 Google Scholar
[18]	Ehrlich J E, Neilson D T, Walker A C, Kennedy G T, Grant R S, Sibbett W, Hopkinson M 1993 Semicond. Sci. Technol. 8 307 Google Scholar
[19]	Alfieri C G E, Waldburger D, Link S M, Gini E, Golling M, Eisenstein G, Keller U 2017 Opt. Express 25 6402 Google Scholar
[20]	Keller U 1994 Appl. Phys. B 58 347 Google Scholar
[21]	Antal P G, Szipőcs R 2012 Appl. Phys. B 107 17 Google Scholar
[22]	Seres E, Seres J, Spielmann C 2012 Opt. Express 20 6185 Google Scholar
[23]	Carlin C Z, Bradshaw G K, Samberg J P, Colter P C, Bedair S M 2013 IEEE T. Electron Dev. 60 2532 Google Scholar
[24]	Ongstad A P, Gallant D J, Dente G C 1995 Appl. Phys. Lett. 66 2730 Google Scholar
[25]	Ongstad A P, Tilton M L, Bochove E J, Dente G C 1996 J. Appl. Phys. 80 2866 Google Scholar

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